Abstract: Some implementations provide a semiconductor device (e.g., die) that includes a substrate, several metal layers and dielectric layers coupled to the substrate, a pad coupled to one of the plurality of metal layers, a first metal redistribution layer coupled to the pad, and a second metal redistribution layer coupled to the first metal redistribution layer. The second metal redistribution layer includes a cobalt tungsten phosphorous material. In some implementations, the first metal redistribution layer is a copper layer. In some implementations, the semiconductor device further includes a first underbump metallization (UBM) layer and a second underbump metallization (UBM) layer.

Abstract: A semiconductor die includes a via within a substrate material of the semiconductor die. The via includes a first conductive material having a first Coefficient of Thermal Expansion (CTE) and a second conductive material between the first conductive material and the substrate material of the semiconductor die. The second conductive material has a second CTE between the first CTE and a CTE of the substrate material of the semiconductor die. The first conductive material can be copper. The second conductive material can be tungsten and/or nickel. The substrate material can be silicon.

Abstract: A method of stretching solder joints between the input/output pads of an electrical component and corresponding input/output pads on a substrate includes the steps of: melting the solder joints; confining the component while the solder joints are melted such that the component can only move substantially perpendicular to the substrate; pulling the component, while the component is confined, by an external force in a direction away from the substrate to thereby stretch the melted solder joints; compelling the movement of the component to stop when the component has moved a predetermined distance; and, solidifying the solder joints while the component is compelled to stop. By stretching the solder joints with the above method, the solder joint shape can be changed from convex to concave; and thermally induced stress/strain in the joint is substantially reduced.

Abstract: Enhanced density of electrical and/or mechanical interconnections between adjacent wafers within integrated circuit assemblies and structural integrity of those interconnections under temperature cycling conditions, is attained by utilizing laser assisted chemical vapor deposition to fabricate precisely configured metal posts which serve as such interconnections.