Abstract: An improved reticle pattern for semiconductor lithography systems that utilize partially coherent or off-axis illumination includes blinder structures located adjacent to the exterior features of the reticle pattern. The blinder structures protect the exterior features from light that is scattered from large low resolution areas of the reticle in a defocus mode of the lithography system. This protects the exterior features projected onto a semiconductor wafer from degradation and improves the resolution, contrast and depth of focus of the lithographic system. In an illustrative embodiment, the reticle pattern is formed as a simple grating in which the exterior features of the grating are protected from image degradation by blinder structures formed as one or more solid blinder lines.