Abstract: Methods and associated structures of forming a microelectronic device are described. Those methods may comprise forming a thin metal-organic layer on a copper structure, wherein the thin metal-organic layer substantially prevents corrosion of the copper structure, and wherein the thin metal-organic layer comprises an organo-copper compound comprising an alkyl group and a thiol group. In addition, methods of applying a high pH cleaning process using a surfactant to improve surface wetting in a low foaming solution is described.