Patents by Inventor Steve Krause
Steve Krause has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8455760Abstract: Methods of interfacing parts in a high voltage environment and related structures are disclosed. A method comprises: providing a first part and a second part; and interfacing the first part and the second part to create a first substantially zero electrical field area at a first outer extent of an interface between the first and second parts and a reduced electrical field area in a different portion of the interface.Type: GrantFiled: January 3, 2011Date of Patent: June 4, 2013Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Russell J. Low, Kasegn Tekletsadik, Anthony Renau, Piotr R. Lubicki, D. Jeffrey Lischer, Steve Krause, Eric Hermanson, Doug E. May
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Patent number: 8143604Abstract: An ion implantation system includes an ion source configured to provide an ion beam, a terminal structure defining a cavity, the ion source at least partially disposed within the cavity, and an insulator system. The insulator system is configured to electrically insulate the terminal structure and is configured to provide an effective dielectric strength greater than about 72 kilovolts (kV)/inch in a region proximate at least one exterior surface of the terminal structure. A gas box insulator system to electrically insulate a gas box of the ion implantation system is also provided.Type: GrantFiled: March 31, 2006Date of Patent: March 27, 2012Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Russell Low, Piortr R. Lubicki, D. Jeffrey Lischer, Steve Krause, Eric Hermanson, Joseph C. Olson
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Publication number: 20110094798Abstract: Methods of interfacing parts in a high voltage environment and related structures are disclosed. A method comprises: providing a first part and a second part; and interfacing the first part and the second part to create a first substantially zero electrical field area at a first outer extent of an interface between the first and second parts and a reduced electrical field area in a different portion of the interface.Type: ApplicationFiled: January 3, 2011Publication date: April 28, 2011Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.Inventors: Russell J. Low, Kasegn D. Tekletsadik, Anthony Renau, Piotr R. Lubicki, D. Jeffrey Lischer, Steve Krause, Eric Hermanson, Doug E. May
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Patent number: 7863520Abstract: Methods of interfacing parts in a high voltage environment and related structures are disclosed. A method comprises: providing an insulation medium between a first part and a second part in a high voltage environment; and interfacing the first part and the second part by compressing the first part and the second part against the insulation medium.Type: GrantFiled: August 14, 2007Date of Patent: January 4, 2011Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Russell J. Low, Kasegn D. Tekletsadik, Anthony Renau, Piotr R. Lubicki, D. Jeffrey Lischer, Steve Krause, Eric Hermanson, Doug E. May
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Patent number: 7842934Abstract: Terminal structures of an ion implanter having insulated conductors with dielectric fins are disclosed. In one particular exemplary embodiment, the terminal structures of an ion implanter may be realized with insulated conductors with one or more dielectric fins. For example, the ion implanter may comprise an ion source configured to provide an ion beam. The ion implanter may also comprise a terminal structure defining a cavity, wherein the ion source may be at least partially disposed within the cavity. The ion implanter may further comprise an insulated conductor having at least one dielectric fin disposed proximate an exterior portion of the terminal structure to modify an electric field.Type: GrantFiled: August 27, 2007Date of Patent: November 30, 2010Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Kasegn D. Tekletsadik, Eric Hermanson, Doug May, Steve Krause, Russell John Low
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Patent number: 7799999Abstract: Insulated conducting devices and related methods are disclosed. An insulated conducting device for a voltage structure comprises: a conductor connected to a voltage; and multiple insulation segments enclosing the conductor, the multiple insulation segments interfacing with one another.Type: GrantFiled: August 20, 2007Date of Patent: September 21, 2010Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Kasegn D. Tekletsadik, Steve Krause, Eric Hermanson, Russell J. Low
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Patent number: 7576337Abstract: A power supply system for an ion implantation system. In one particular exemplary embodiment, the system may be realized as a power supply system that includes a low frequency power inverter, a stack driver and a high voltage power generation unit that receives source power from the power inverter. The high voltage generation unit may include a high voltage transformer for providing an output power that is multiplied to a desired output level and delivered to an input terminal of an ion beam accelerator. The power supply system may also include a dielectric enclosure that encases at least a portion of the high voltage power generation unit, thereby preventing variation in the break down strength of the internal components.Type: GrantFiled: January 5, 2007Date of Patent: August 18, 2009Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Piotr Lubicki, Russell Low, Steve Krause, Eric Hermanson
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Publication number: 20090057572Abstract: Terminal structures of an ion implanter having insulated conductors with dielectric fins are disclosed. In one particular exemplary embodiment, the terminal structures of an ion implanter may be realized with insulated conductors with one or more dielectric fins. For example, the ion implanter may comprise an ion source configured to provide an ion beam. The ion implanter may also comprise a terminal structure defining a cavity, wherein the ion source may be at least partially disposed within the cavity. The ion implanter may further comprise an insulated conductor having at least one dielectric fin disposed proximate an exterior portion of the terminal structure to modify an electric field.Type: ApplicationFiled: August 27, 2007Publication date: March 5, 2009Applicant: Varian Semiconductor Equipment Associates, Inc.Inventors: Kasegn D. Tekletsadik, Eric Hermanson, Doug May, Steve Krause, Russel John Low
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Publication number: 20090057573Abstract: Techniques for terminal insulation for an ion implanter are disclosed. In one particular exemplary embodiment, the techniques may be realized as an ion implanter comprising a terminal structure defining a terminal cavity. The ion implanter may also comprise a grounded enclosure defining a grounded cavity and the terminal structure may be at least partially disposed within the grounded cavity. The ion implanter may further comprise an intermediate terminal structure disposed proximate an exterior portion of the terminal structure and at least partially disposed within the grounded cavity.Type: ApplicationFiled: August 29, 2007Publication date: March 5, 2009Applicant: Varian Semiconductor Equipment Associates, Inc.Inventors: Russell John LOW, Piotr R. Lubicki, Jeffrey D. Lischer, Steve Krause, Eric Hermanson, Joseph C. Olson, Kasegn D. Tekletsadik
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Publication number: 20090050347Abstract: Insulated conducting devices and related methods are disclosed. An insulated conducting device for a voltage structure comprises: a conductor connected to a voltage; and multiple insulation segments enclosing the conductor, the multiple insulation segments interfacing with one another.Type: ApplicationFiled: August 20, 2007Publication date: February 26, 2009Inventors: Kasegn D. Tekletsadik, Steve Krause, Eric Hermanson, Russell J. Low
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Publication number: 20090047801Abstract: Methods of interfacing parts in a high voltage environment and related structures are disclosed. A method comprises: providing an insulation medium between a first part and a second part in a high voltage environment; and interfacing the first part and the second part by compressing the first part and the second part against the insulation medium.Type: ApplicationFiled: August 14, 2007Publication date: February 19, 2009Inventors: Russell J. Low, Kasegn D. Tekletsadik, Anthony Renau, Piotr R. Lubicki, D. Jeffrey Lischer, Steve Krause, Eric Hermanson, Doug E. May
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Publication number: 20080164408Abstract: A power supply system for an ion implantation system. In one particular exemplary embodiment, the system may be realized as a power supply system that includes a low frequency power inverter, a stack driver and a high voltage power generation unit that receives source power from the power inverter. The high voltage generation unit may include a high voltage transformer for providing an output power that is multiplied to a desired output level and delivered to an input terminal of an ion beam accelerator. The power supply system may also include a dielectric enclosure that encases at least a portion of the high voltage power generation unit, thereby preventing variation in the break down strength of the internal components.Type: ApplicationFiled: January 5, 2007Publication date: July 10, 2008Applicant: Varian Semiconductor Equipment Associates, Inc.Inventors: Piotr R. Lubicki, Russell Low, Steve Krause, Eric Hermanson
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Publication number: 20080077471Abstract: An automated and highly scalable system and method optimizes the selection of allied products in association with a main product. Initially, a plurality of allied products is identified. Each allied product is categorized to determine attributes by which the allied products are evaluated. Each allied product is rated to create a ranked list of allied products. Content, such as textual information, corresponding to each of the allied products is automatically generated using assertion models. Highly customized optimization rules are then applied to refine the ranked list and select optimal allied products. In one application, the optimization rules may be based on business requirements and the selected allied products are cross-sold with the main product on an online retail web site.Type: ApplicationFiled: February 6, 2007Publication date: March 27, 2008Applicant: CNET Networks, Inc.Inventors: Tim Musgrove, Steve Krause, Howard Burrows, Robin Walsh
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Publication number: 20070235663Abstract: An ion implantation system includes an ion source configured to provide an ion beam, a terminal structure defining a cavity, the ion source at least partially disposed within the cavity, and an insulator system. The insulator system is configured to electrically insulate the terminal structure and is configured to provide an effective dielectric strength greater than about 72 kilovolts (kV)/inch in a region proximate at least one exterior surface of the terminal structure. A gas box insulator system to electrically insulate a gas box of the ion implantation system is also provided.Type: ApplicationFiled: March 31, 2006Publication date: October 11, 2007Applicant: Varian Semiconductor Equipment Associates, Inc.Inventors: Russell Low, Piortr Lubicki, D. Lischer, Steve Krause, Eric Hermanson, Joseph Olson