Patents by Inventor Steve Krause

Steve Krause has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8455760
    Abstract: Methods of interfacing parts in a high voltage environment and related structures are disclosed. A method comprises: providing a first part and a second part; and interfacing the first part and the second part to create a first substantially zero electrical field area at a first outer extent of an interface between the first and second parts and a reduced electrical field area in a different portion of the interface.
    Type: Grant
    Filed: January 3, 2011
    Date of Patent: June 4, 2013
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Russell J. Low, Kasegn Tekletsadik, Anthony Renau, Piotr R. Lubicki, D. Jeffrey Lischer, Steve Krause, Eric Hermanson, Doug E. May
  • Patent number: 8143604
    Abstract: An ion implantation system includes an ion source configured to provide an ion beam, a terminal structure defining a cavity, the ion source at least partially disposed within the cavity, and an insulator system. The insulator system is configured to electrically insulate the terminal structure and is configured to provide an effective dielectric strength greater than about 72 kilovolts (kV)/inch in a region proximate at least one exterior surface of the terminal structure. A gas box insulator system to electrically insulate a gas box of the ion implantation system is also provided.
    Type: Grant
    Filed: March 31, 2006
    Date of Patent: March 27, 2012
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Russell Low, Piortr R. Lubicki, D. Jeffrey Lischer, Steve Krause, Eric Hermanson, Joseph C. Olson
  • Publication number: 20110094798
    Abstract: Methods of interfacing parts in a high voltage environment and related structures are disclosed. A method comprises: providing a first part and a second part; and interfacing the first part and the second part to create a first substantially zero electrical field area at a first outer extent of an interface between the first and second parts and a reduced electrical field area in a different portion of the interface.
    Type: Application
    Filed: January 3, 2011
    Publication date: April 28, 2011
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Russell J. Low, Kasegn D. Tekletsadik, Anthony Renau, Piotr R. Lubicki, D. Jeffrey Lischer, Steve Krause, Eric Hermanson, Doug E. May
  • Patent number: 7863520
    Abstract: Methods of interfacing parts in a high voltage environment and related structures are disclosed. A method comprises: providing an insulation medium between a first part and a second part in a high voltage environment; and interfacing the first part and the second part by compressing the first part and the second part against the insulation medium.
    Type: Grant
    Filed: August 14, 2007
    Date of Patent: January 4, 2011
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Russell J. Low, Kasegn D. Tekletsadik, Anthony Renau, Piotr R. Lubicki, D. Jeffrey Lischer, Steve Krause, Eric Hermanson, Doug E. May
  • Patent number: 7842934
    Abstract: Terminal structures of an ion implanter having insulated conductors with dielectric fins are disclosed. In one particular exemplary embodiment, the terminal structures of an ion implanter may be realized with insulated conductors with one or more dielectric fins. For example, the ion implanter may comprise an ion source configured to provide an ion beam. The ion implanter may also comprise a terminal structure defining a cavity, wherein the ion source may be at least partially disposed within the cavity. The ion implanter may further comprise an insulated conductor having at least one dielectric fin disposed proximate an exterior portion of the terminal structure to modify an electric field.
    Type: Grant
    Filed: August 27, 2007
    Date of Patent: November 30, 2010
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Kasegn D. Tekletsadik, Eric Hermanson, Doug May, Steve Krause, Russell John Low
  • Patent number: 7799999
    Abstract: Insulated conducting devices and related methods are disclosed. An insulated conducting device for a voltage structure comprises: a conductor connected to a voltage; and multiple insulation segments enclosing the conductor, the multiple insulation segments interfacing with one another.
    Type: Grant
    Filed: August 20, 2007
    Date of Patent: September 21, 2010
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Kasegn D. Tekletsadik, Steve Krause, Eric Hermanson, Russell J. Low
  • Patent number: 7576337
    Abstract: A power supply system for an ion implantation system. In one particular exemplary embodiment, the system may be realized as a power supply system that includes a low frequency power inverter, a stack driver and a high voltage power generation unit that receives source power from the power inverter. The high voltage generation unit may include a high voltage transformer for providing an output power that is multiplied to a desired output level and delivered to an input terminal of an ion beam accelerator. The power supply system may also include a dielectric enclosure that encases at least a portion of the high voltage power generation unit, thereby preventing variation in the break down strength of the internal components.
    Type: Grant
    Filed: January 5, 2007
    Date of Patent: August 18, 2009
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Piotr Lubicki, Russell Low, Steve Krause, Eric Hermanson
  • Publication number: 20090057573
    Abstract: Techniques for terminal insulation for an ion implanter are disclosed. In one particular exemplary embodiment, the techniques may be realized as an ion implanter comprising a terminal structure defining a terminal cavity. The ion implanter may also comprise a grounded enclosure defining a grounded cavity and the terminal structure may be at least partially disposed within the grounded cavity. The ion implanter may further comprise an intermediate terminal structure disposed proximate an exterior portion of the terminal structure and at least partially disposed within the grounded cavity.
    Type: Application
    Filed: August 29, 2007
    Publication date: March 5, 2009
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Russell John LOW, Piotr R. Lubicki, Jeffrey D. Lischer, Steve Krause, Eric Hermanson, Joseph C. Olson, Kasegn D. Tekletsadik
  • Publication number: 20090057572
    Abstract: Terminal structures of an ion implanter having insulated conductors with dielectric fins are disclosed. In one particular exemplary embodiment, the terminal structures of an ion implanter may be realized with insulated conductors with one or more dielectric fins. For example, the ion implanter may comprise an ion source configured to provide an ion beam. The ion implanter may also comprise a terminal structure defining a cavity, wherein the ion source may be at least partially disposed within the cavity. The ion implanter may further comprise an insulated conductor having at least one dielectric fin disposed proximate an exterior portion of the terminal structure to modify an electric field.
    Type: Application
    Filed: August 27, 2007
    Publication date: March 5, 2009
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Kasegn D. Tekletsadik, Eric Hermanson, Doug May, Steve Krause, Russel John Low
  • Publication number: 20090050347
    Abstract: Insulated conducting devices and related methods are disclosed. An insulated conducting device for a voltage structure comprises: a conductor connected to a voltage; and multiple insulation segments enclosing the conductor, the multiple insulation segments interfacing with one another.
    Type: Application
    Filed: August 20, 2007
    Publication date: February 26, 2009
    Inventors: Kasegn D. Tekletsadik, Steve Krause, Eric Hermanson, Russell J. Low
  • Publication number: 20090047801
    Abstract: Methods of interfacing parts in a high voltage environment and related structures are disclosed. A method comprises: providing an insulation medium between a first part and a second part in a high voltage environment; and interfacing the first part and the second part by compressing the first part and the second part against the insulation medium.
    Type: Application
    Filed: August 14, 2007
    Publication date: February 19, 2009
    Inventors: Russell J. Low, Kasegn D. Tekletsadik, Anthony Renau, Piotr R. Lubicki, D. Jeffrey Lischer, Steve Krause, Eric Hermanson, Doug E. May
  • Publication number: 20080164408
    Abstract: A power supply system for an ion implantation system. In one particular exemplary embodiment, the system may be realized as a power supply system that includes a low frequency power inverter, a stack driver and a high voltage power generation unit that receives source power from the power inverter. The high voltage generation unit may include a high voltage transformer for providing an output power that is multiplied to a desired output level and delivered to an input terminal of an ion beam accelerator. The power supply system may also include a dielectric enclosure that encases at least a portion of the high voltage power generation unit, thereby preventing variation in the break down strength of the internal components.
    Type: Application
    Filed: January 5, 2007
    Publication date: July 10, 2008
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Piotr R. Lubicki, Russell Low, Steve Krause, Eric Hermanson
  • Publication number: 20080077471
    Abstract: An automated and highly scalable system and method optimizes the selection of allied products in association with a main product. Initially, a plurality of allied products is identified. Each allied product is categorized to determine attributes by which the allied products are evaluated. Each allied product is rated to create a ranked list of allied products. Content, such as textual information, corresponding to each of the allied products is automatically generated using assertion models. Highly customized optimization rules are then applied to refine the ranked list and select optimal allied products. In one application, the optimization rules may be based on business requirements and the selected allied products are cross-sold with the main product on an online retail web site.
    Type: Application
    Filed: February 6, 2007
    Publication date: March 27, 2008
    Applicant: CNET Networks, Inc.
    Inventors: Tim Musgrove, Steve Krause, Howard Burrows, Robin Walsh
  • Publication number: 20070235663
    Abstract: An ion implantation system includes an ion source configured to provide an ion beam, a terminal structure defining a cavity, the ion source at least partially disposed within the cavity, and an insulator system. The insulator system is configured to electrically insulate the terminal structure and is configured to provide an effective dielectric strength greater than about 72 kilovolts (kV)/inch in a region proximate at least one exterior surface of the terminal structure. A gas box insulator system to electrically insulate a gas box of the ion implantation system is also provided.
    Type: Application
    Filed: March 31, 2006
    Publication date: October 11, 2007
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Russell Low, Piortr Lubicki, D. Lischer, Steve Krause, Eric Hermanson, Joseph Olson