Abstract: Methods and systems for monitoring a non-defect related characteristic of a patterned wafer are provided. One computer-implemented method includes generating output responsive to light from a patterned wafer using an inspection system. The method also includes determining differences between a value of a non-defect related characteristic of the patterned wafer and a known value of the non-defect related characteristic based on differences between one or more attributes of the output and one or more attributes of other output of the inspection system for a different patterned wafer having the known value of the non-defect related characteristic.

Abstract: Methods and systems for inspection of a specimen using different parameters are provided. One computer-implemented method includes determining optimal parameters for inspection based on selected defects. This method also includes setting parameters of an inspection system at the optimal parameters prior to inspection. Another method for inspecting a specimen includes illuminating the specimen with light having a wavelength below about 350 nm and with light having a wavelength above about 350 nm. The method also includes processing signals representative of light collected from the specimen to detect defects or process variations on the specimen. One system configured to inspect a specimen includes a first optical subsystem coupled to a broadband light source and a second optical subsystem coupled to a laser. The system also includes a third optical subsystem configured to couple light from the first and second optical subsystems to an objective, which focuses the light onto the specimen.