Abstract: An apparatus and method for monitoring a plasma etch process are disclosed which will provide for in-situ measurement of plasma wafer-charge damage with both temporal and spatial resolution. A removable test structure comprising a test wafer that may take the form of a silicon substrate with one or more test devices is provided with backside contacts. Test devices such as capacitors, MOS transistors, etc., which may be provided with antennas, are provided on the top surface of the wafer which can be electrically contacted on the backside of the substrate. The apparatus also includes a wafer chuck provided with contacts which electrically engage the back-side contacts on the substrate and communicating with the outside of the plasma chamber so that the electrical signals generated in the test devices may be measured in real-time while the plasma process is being performed on the substrate.

Abstract: A process for manufacturing organic phosphites of at least 95.5 wt. % purity, said process comprising: reacting a hydroxyl-containing compound with a phosphorous compound, and desorbing residual hydroxyl-containing compound in the reaction product in a desorbing column employing an inert gas as a desorbing agent.