Abstract: Mask patterns and mask devices for photolithography used in semiconductor and other device fabrication are described. For example, a method of fabricating a semiconductor device includes generating, utilizing an optical proximity correction model, a first mask pattern for formation of geometric features using a first mask pattern comprising a first set of mask features. The method also includes determining, based at least in part on a rules-based optical proximity correction data structure, adjustments to the first mask pattern to generate a second mask pattern, wherein the rules-based optical proximity correction data structure characterizes predicted deviations which would result from formation of at least one of the geometric features utilizing the first mask pattern, the predicted deviations being determined by performing scattered data interpolation on measured error data.

Abstract: Mask devices for photolithography used in semiconductor and other device fabrication are described. For example, a mask device includes a light-passing substrate and a patterned opaque layer disposed on the light-passing substrate. The patterned opaque layer includes a light-modulating region with elongate features consecutively disposed at increasing distances from one another.

Abstract: An integrated circuit containing an SRAM may be formed using one or more periodic photolithographic patterns for elements of the integrated circuit such as gates and contacts, which have alternating line and space configurations in SRAM cells. Strap rows of the SRAM containing well ties and/or substrate taps which have SRAM cells on two opposite sides are configured so that the alternating line and space configurations are continuous across the regions containing the well ties and substrate taps.

Abstract: An integrated circuit containing an SRAM may be formed using one or more periodic photolithographic patterns for elements of the integrated circuit such as gates and contacts, which have alternating line and space configurations in SRAM cells. Strap rows of the SRAM containing well ties and/or substrate taps which have SRAM cells on two opposite sides are configured so that the alternating line and space configurations are continuous across the regions containing the well ties and substrate taps.

Abstract: An integrated circuit containing an SRAM may be formed using one or more periodic photolithographic patterns for elements of the integrated circuit such as gates and contacts, which have alternating line and space configurations in SRAM cells. Strap rows of the SRAM containing well ties and/or substrate taps which have SRAM cells on two opposite sides are configured so that the alternating line and space configurations are continuous across the regions containing the well ties and substrate taps.

Abstract: A semiconductor memory cell includes a set of circuit structures, each having column input/output circuits. The semiconductor memory cell further includes a set of replicas corresponding to the column input/output circuits. The set of replicas are non-functional and fills an empty space next to the column input/output circuits and hence, provides context protection for the column input/output circuits.

Abstract: A semiconductor memory cell includes a set of circuit structures, each having column input/output circuits. The semiconductor memory cell further includes a set of replicas corresponding to the column input/output circuits. The set of replicas are non-functional and fills an empty space next to the column input/output circuits and hence, provides context protection for the column input/output circuits.

Abstract: An integrated circuit containing an SRAM may be formed using one or more periodic photolithographic patterns for elements of the integrated circuit such as gates and contacts, which have alternating line and space configurations in SRAM cells. Strap rows of the SRAM containing well ties and/or substrate taps which have SRAM cells on two opposite sides are configured so that the alternating line and space configurations are continuous across the regions containing the well ties and substrate taps.