Abstract: Variation in position of test marks formed of overlapping exposed features imaged by an imaging structure such as that of a lithography tool are characterized at high speed and with extremely high accuracy by imaging test marks formed in resist or on a target or wafer by a lithographic process, collecting irradiance distribution data and fitting a mathematical function to respective portions or regions of output data corresponding to a test mark of a test mark pattern such as respective maxima or minima regions or other regions of the irradiance distribution data to determine actual location and shift of position of respective patterns of test marks. Metrology fields are formed of patterns of test marks on test wafers or production wafers preferably including a critical dimension exposed at different focus distances and/or illumination conditions to capture position/aberration data for the imaging structure.

Abstract: Variation in position of test marks formed of overlapping exposed features imaged by an imaging structure such as that of a lithography tool are characterized at high speed and with extremely high accuracy by imaging test marks formed in resist or on a target or wafer by a lithographic process, collecting irradiance distribution data and fitting a mathematical function to respective portions or regions of output data corresponding to a test mark of a test mark pattern such as respective maxima or minima regions or other regions of the irradiance distribution data to determine actual location and shift of position of respective patterns of test marks. Metrology fields are formed of patterns of test marks on test wafers or production wafers preferably including a critical dimension exposed at different focus distances and/or illumination conditions to capture position/aberration data for the imaging structure.

Abstract: Increased accuracy of measurement of variation of a critical dimension is achieved through measurement of area of a test mark by detection of intensity of radiation such as broadband light with which at least a portion of a test mark is imaged. The test mark is preferably formed by partial lithographic exposures of overlapping features, preferably lines having a width approximating a critical dimension of interest and at a shallow angle to each other such that the test mark has the shape of a parallelogram or rhombus.

Abstract: Increased accuracy of measurement of variation of a critical dimension is achieved through measurement of area of a test mark by detection of intensity of radiation such as broadband light with which at least a portion of a test mark is imaged. The test mark is preferably formed by partial lithographic exposures of overlapping features, preferably lines having a width approximating a critical dimension of interest and at a shallow angle to each other such that the test mark has the shape of a parallelogram or rhombus.