Abstract: Disclosed is an example of a registration assembly for a media processing device, including a registration surface. The registration assembly including a bias member coupled to the registration surface to bias the registration surface toward the media processing path to apply a force to a media unit. The registration assembly including an activator coupled to a roller, the roller to be driven via contact with the media unit. The activator configured to move the registration surface toward the media processing path into the active position to engage the media unit responsive to rotation of the roller in the first rotational direction. The activator configured to move the registration surface away from the media processing path into an inactive position responsive to rotation of the roller in the second rotational direction.

Abstract: An example of the claim method includes, in response to detecting a rejected media unit, directing a media feed path towards a reject area. The method includes depositing the rejected media unit into the reject area. The reject area is defined by a cassette surface on a body of the ribbon cassette. The ribbon cassette is unable to be removed from the media processing device until the rejected media unit is removed from the cassette surface.

Abstract: A media processing device includes: a housing having an opening providing access to a cassette removably supported within the housing; a media unit holder configured to receive a rejected media unit driven between the opening and a body of the cassette along a media reject path; the media unit holder including: a deck having a support surface between a body of the cassette and the opening, the support surface facing the opening; the deck configured to receive the rejected media unit on the support surface for removal of the rejected media unit via the opening.

Abstract: A media processing device with a housing includes: a motorized media unit transporter to drive a media unit along a media processing path between an unprocessed media unit source and a processed media unit output; an auxiliary media unit transporter including a roller connected to a converter, and a bias member connected between the converter and the housing. In a first operating mode, the auxiliary transporter receives the media unit from the transporter to drive the roller and the converter; rotation of the converter deforms the bias member from a resting position to a primed position. In a second operating mode initiated upon rotation of the converter to a bias release position, the auxiliary transporter propels the media unit by releasing the bias member from the primed position to drive rotation of the converter and the roller as the bias member returns to the resting position.

Abstract: A media processing device includes: a housing having an opening providing access to a cassette removably supported within the housing; a media unit holder configured to receive a rejected media unit driven between the opening and a body of the cassette along a media reject path; the media unit holder including: a deck having a support surface between a body of the cassette and the opening, the support surface facing the opening; the deck configured to receive the rejected media unit on the support surface for removal of the rejected media unit via the opening.

Abstract: A media processing device includes: a transport assembly to guide a media unit from a source past a processing head in an outbound direction, and past the processing head in a return direction toward an output; and a redirector to receive the media unit in the outbound direction, flip the media unit, and expel the media unit in the return direction. The redirector includes: a motor having an output shaft; a carriage rotatably supported by a housing; a roller supported by the carriage for engaging with the media unit; and a selector connected between the output shaft and the roller. The selector, for a first output shaft drive direction, rotates relative to the carriage and drives the roller for receiving or expelling the media unit, and for a second output shaft drive direction, engages the carriage and rotates the carriage relative to the housing for flipping the media unit.

Abstract: A media processing device includes: a hopper supporting media units (e.g. cards), and a biasing assembly biasing the cards toward a hopper outlet; an input roller for accepting a single card at a hopper slot inlet; a pick roller at the outlet for dispensing a card from the hopper to a media processing path; a motor having an output shaft; a primary drivetrain segment connecting the output shaft with the pick roller; an auxiliary output selector connected to the primary drivetrain segment and switchable between first and second output configurations; first and second auxiliary drivetrain segments connecting the output selector, respectively, with the input roller and a release member for disengaging the biasing assembly; and a selector input movable to switch the output selector between the first output configuration, coupling the primary and first auxiliary drivetrain segments, and the second output configuration, coupling the primary and second auxiliary drivetrain segments.

Abstract: A media processing device with a housing includes: a motorized media unit transporter to drive a media unit along a media processing path between an unprocessed media unit source and a processed media unit output; an auxiliary media unit transporter including a roller connected to a converter, and a bias member connected between the converter and the housing. In a first operating mode, the auxiliary transporter receives the media unit from the transporter to drive the roller and the converter; rotation of the converter deforms the bias member from a resting position to a primed position. In a second operating mode initiated upon rotation of the converter to a bias release position, the auxiliary transporter propels the media unit by releasing the bias member from the primed position to drive rotation of the converter and the roller as the bias member returns to the resting position.

Abstract: A light emitting diode (LED) comprises an n-type Group III-V semiconductor layer, an active layer adjacent to the n-type Group III-V semiconductor layer, and a p-type Group III-V semiconductor layer adjacent to the active layer. The active layer includes one or more V-pits. A portion of the p-type Group III-V semiconductor layer is in the V-pits. A p-type dopant injection layer provided during the formation of the p-type Group III-V layer aids in providing a predetermined concentration, distribution and/or uniformity of the p-type dopant in the V-pits.

Abstract: A light emitting diode (LED) comprises an n-type Group III-V semiconductor layer, an active layer adjacent to the n-type Group III-V semiconductor layer, and a p-type Group III-V semiconductor layer adjacent to the active layer. The active layer includes one or more V-pits. A portion of the p-type Group III-V semiconductor layer is in the V-pits. A p-type dopant injection layer provided during the formation of the p-type Group III-V layer aids in providing a predetermined concentration, distribution and/or uniformity of the p-type dopant in the V-pits.

Abstract: A light emitting diode (LED) comprises an n-type Group III-V semiconductor layer, an active layer adjacent to the n-type Group III-V semiconductor layer, and a p-type Group III-V semiconductor layer adjacent to the active layer. The active layer includes one or more V-pits. A portion of the p-type Group III-V semiconductor layer is in the V-pits. A p-type dopant injection layer provided during the formation of the p-type Group III-V layer aids in providing a predetermined concentration, distribution and/or uniformity of the p-type dopant in the V-pits.

Abstract: A light emitting diode (LED) comprises an n-type Group III-V semiconductor layer, an active layer adjacent to the n-type Group III-V semiconductor layer, and a p-type Group III-V semiconductor layer adjacent to the active layer. The active layer includes one or more V-pits. A portion of the p-type Group III-V semiconductor layer is in the V-pits. A p-type dopant injection layer provided during the formation of the p-type Group III-V layer aids in providing a predetermined concentration, distribution and/or uniformity of the p-type dopant in the V-pits.

Abstract: A light emitting device comprises a first layer having an n-type Group III-V semiconductor, a second layer adjacent to the first layer, the second layer comprising an active material that generates light upon the recombination of electrons and holes. The active material in some cases has one or more V-pits at a density between about 1 V-pit/?m2 and 30 V-pits/?m2. The light emitting device includes a third layer adjacent to the second layer, the third layer comprising a p-type Group III-V semiconductor.

Abstract: A light emitting diode (LED) comprises an n-type Group III-V semiconductor layer, an active layer adjacent to the n-type Group III-V semiconductor layer, and a p-type Group III-V semiconductor layer adjacent to the active layer. The active layer includes one or more V-pits. A portion of the p-type Group III-V semiconductor layer is in the V-pits. A p-type dopant injection layer provided during the formation of the p-type Group III-V layer aids in providing a predetermined concentration, distribution and/or uniformity of the p-type dopant in the V-pits.

Abstract: A light emitting device comprises a first layer having an n-type Group III-V semiconductor, a second layer adjacent to the first layer, the second layer comprising an active material that generates light upon the recombination of electrons and holes. The active material in some cases has one or more V-pits at a density between about 1 V-pit/?m2 and 30 V-pits/?m2. The light emitting device includes a third layer adjacent to the second layer, the third layer comprising a p-type Group III-V semiconductor.

Abstract: A light emitting diode (LED) comprises an n-type Group III-V semiconductor layer, an active layer adjacent to the n-type Group III-V semiconductor layer, and a p-type Group III-V semiconductor layer adjacent to the active layer. The active layer includes one or more V-pits. A portion of the p-type Group III-V semiconductor layer is in the V-pits. A p-type dopant injection layer provided during the formation of the p-type Group III-V layer aids in providing a predetermined concentration, distribution and/or uniformity of the p-type dopant in the V-pits.

Abstract: A light emitting diode (LED) comprises an n-type Group III-V semiconductor layer, an active layer adjacent to the n-type Group III-V semiconductor layer, and a p-type Group III-V semiconductor layer adjacent to the active layer. The active layer includes one or more V-pits. A portion of the p-type Group III-V semiconductor layer is in the V-pits. A p-type dopant injection layer provided during the formation of the p-type Group III-V layer aids in providing a predetermined concentration, distribution and/or uniformity of the p-type dopant in the V-pits.

Abstract: A light emitting diode (LED) comprises an n-type Group III-V semiconductor layer, an active layer adjacent to the n-type Group III-V semiconductor layer, and a p-type Group III-V semiconductor layer adjacent to the active layer. The active layer includes one or more V-pits. A portion of the p-type Group III-V semiconductor layer is in the V-pits. A p-type dopant injection layer provided during the formation of the p-type Group III-V layer aids in providing a predetermined concentration, distribution and/or uniformity of the p-type dopant in the V-pits.

Abstract: A light emitting diode (LED) comprises an n-type Group III-V semiconductor layer, an active layer adjacent to the n-type Group III-V semiconductor layer, and a p-type Group III-V semiconductor layer adjacent to the active layer. The active layer includes one or more V-pits. A portion of the p-type Group III-V semiconductor layer is in the V-pits. A p-type dopant injection layer provided during the formation of the p-type Group III-V layer aids in providing a predetermined concentration, distribution and/or uniformity of the p-type dopant in the V-pits.

Abstract: A light emitting device comprises a first layer having an n-type Group III-V semiconductor, a second layer adjacent to the first layer, the second layer comprising an active material that generates light upon the recombination of electrons and holes. The active material in some cases has one or more V-pits at a density between about 1 V-pit/?m2 and 30 V-pits/?m2. The light emitting device includes a third layer adjacent to the second layer, the third layer comprising a p-type Group III-V semiconductor.