Abstract: A flexible memory interface system includes a control module, instruction memory, a command processing unit, an address processing unit, and a data processing unit. The control module controls storing and retrieving of a command portion, an addressing portion, and data of an instruction to access memory to and from the instruction memory and the command processing unit, the address processing unit, and the data processing unit, respectively. The command processing unit is operably coupled to process a command portion of an instruction to access memory. The address processing unit is operably coupled to process an addressing portion of the instruction to access the memory. The data processing unit is operably coupled to process data conveyance to or from the external memory based on the instruction to access the memory.

Abstract: Methods and circuits for measuring the temperature of a transistor are disclosed. An embodiment of the method includes, providing a current into a circuit, wherein the circuit is connected to the transistor. A variable resistance is connected between the base and collector of the transistor. The circuit has a first mode and a second mode, wherein the current in the first mode flows into the base of the transistor and through the resistance and the current in the second mode flows into the emitter of the transistor. Voltages in both the first mode and the second mode are measured using different resistance settings. The temperature of the transistor is calculated based on the difference between the different voltages.

Abstract: Methods and circuits for measuring the temperature of a transistor are disclosed. An embodiment of the method includes, providing a current into a circuit, wherein the circuit is connected to the transistor. A variable resistance is connected between the base and collector of the transistor. The circuit has a first mode and a second mode, wherein the current in the first mode flows into the base of the transistor and through the resistance and the current in the second mode flows into the emitter of the transistor. Voltages in both the first mode and the second mode are measured using different resistance settings. The temperature of the transistor is calculated based on the difference between the different voltages.

Abstract: A flexible memory interface system includes a control module, instruction memory, a command processing unit, an address processing unit, and a data processing unit. The control module controls storing and retrieving of a command portion, an addressing portion, and data of an instruction to access memory to and from the instruction memory and the command processing unit, the address processing unit, and the data processing unit, respectively. The command processing unit is operably coupled to process a command portion of an instruction to access memory. The address processing unit is operably coupled to process an addressing portion of the instruction to access the memory. The data processing unit is operably coupled to process data conveyance to or from the external memory based on the instruction to access the memory.

Abstract: A method for precharging a selected bitline (20) in a nonvolatile memory array using a boost circuit (54) in parallel to a pull-up device (22) for biasing the bitline. The boost circuit (54) is controlled by a pulse signal (26). One embodiment uses a regulator circuit (56) to isolate the boost circuit (54) from the bitline when the bitline voltage exceeds a threshold voltage level. The regulator triggers a delay circuit (58) which is coupled to a sense amplifier (60). The delay circuit (58) then defers activation of the sense amplifier (60) until the voltage on the selected bitline (20) is below a sense amplifier threshold voltage level.