Patents by Inventor Steve W. Mylroie

Steve W. Mylroie has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4143392
    Abstract: A junction field effect transistor and a bipolar transistor are merged in a single composite device disposed within a single isolation region by the use of planar processing techniques. The device includes an annular source region formed within a semiconductor body portion constituting a collector zone. Within the central portion of the collector zone circumscribed by the annular source region there is formed an emitter zone nested within a region that constitutes both the drain region of the JFET and the base zone of the bipolar transistor. An annular channel region connects the annular source region and the central drain region. An annular region forming a semiconductor junction with the annular channel adjacent to the annular source region constitutes one of two gate regions of the JFET. The other gate region is constituted by the body portion serving as the collector zone.
    Type: Grant
    Filed: August 30, 1977
    Date of Patent: March 6, 1979
    Assignee: Signetics Corporation
    Inventor: Steve W. Mylroie