Abstract: A single nucleotide polymorphism (SNP) that results in development of a Type VI collagen, alpha 1 chain-related disorder, and the use of the SNP to identify individuals at risk for developing COL6-related disorders (COL6-RD). Also provided are antisense oligomers for treating individuals at risk for developing COL6-RD, as well as methods for screening compounds for their potential as therapeutic agents.

Abstract: This invention provides a method for enhancing utrophin protein production in a cell by inhibiting an utrophin microRNA molecule. Moreover, the invention provides that methods for enhancing utrophin protein production in a muscle cell are used for treating a muscular dystrophy and/or other myopathies.

Abstract: A single nucleotide polymorphism (SNP) that results in development of a Type VI collagen, alpha 1 chain-related disorder, and the use of the SNP to identify individuals at risk for developing COL6-related disorders (COL6-RD). Also provided are antisense oligomers for treating individuals at risk for developing COL6-RD, as well as methods for screening compounds for their potential as therapeutic agents.

Abstract: This invention provides a method for enhancing utrophin protein production in a cell by inhibiting an utrophin microRNA molecule. Moreover, the invention provides that methods for enhancing utrophin protein production in a muscle cell are used for treating a muscular dystrophy and/or other myopathies.

Abstract: In one embodiment, an overvoltage protection device may include a semiconductor substrate comprising an n-type body region. The overvoltage protection device may further include a first p-type region disposed in a first surface region of the semiconductor substrate, and forming a first P/N junction with the n-type body region, and a second p-type region disposed in a second surface region of the semiconductor substrate opposite the first surface, and forming a second P/N junction with the n-type body region, wherein the n-type body region, first p-type region, and second p-type region form a breakdown device having a breakdown voltage greater than 100V when an external voltage is applied between the first surface region and second surface region.

Abstract: In one embodiment, an overvoltage protection device may include a semiconductor substrate comprising an n-type body region. The overvoltage protection device may further include a first p-type region disposed in a first surface region of the semiconductor substrate, and forming a first P/N junction with the n-type body region, and a second p-type region disposed in a second surface region of the semiconductor substrate opposite the first surface, and forming a second P/N junction with the n-type body region, wherein the n-type body region, first p-type region, and second p-type region form a breakdown device having a breakdown voltage greater than 100V when an external voltage is applied between the first surface region and second surface region.

Abstract: In one embodiment, an overvoltage protection device may include a semiconductor substrate comprising an n-type body region. The overvoltage protection device may further include a first p-type region disposed in a first surface region of the semiconductor substrate, and forming a first P/N junction with the n-type body region, and a second p-type region disposed in a second surface region of the semiconductor substrate opposite the first surface, and forming a second P/N junction with the n-type body region, wherein the n-type body region, first p-type region, and second p-type region form a breakdown device having a breakdown voltage greater than 100 V when an external voltage is applied between the first surface region and second surface region.

Abstract: In one embodiment, an overvoltage protection device may include a semiconductor substrate comprising an n-type body region. The overvoltage protection device may further include a first p-type region disposed in a first surface region of the semiconductor substrate, and forming a first P/N junction with the n-type body region, and a second p-type region disposed in a second surface region of the semiconductor substrate opposite the first surface, and forming a second P/N junction with the n-type body region, wherein the n-type body region, first p-type region, and second p-type region form a breakdown device having a breakdown voltage greater than 100 V when an external voltage is applied between the first surface region and second surface region.