Patents by Inventor Steve Wilton Byatt

Steve Wilton Byatt has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Transient overvoltage protection device
    Patent number: 10325904
    Abstract: In one embodiment, an overvoltage protection device may include a semiconductor substrate comprising an n-type body region. The overvoltage protection device may further include a first p-type region disposed in a first surface region of the semiconductor substrate, and forming a first P/N junction with the n-type body region, and a second p-type region disposed in a second surface region of the semiconductor substrate opposite the first surface, and forming a second P/N junction with the n-type body region, wherein the n-type body region, first p-type region, and second p-type region form a breakdown device having a breakdown voltage greater than 100V when an external voltage is applied between the first surface region and second surface region.
    Type: Grant
    Filed: March 1, 2018
    Date of Patent: June 18, 2019
    Assignee: LITTELFUSE, INC.
    Inventors: Gary Mark Bentley, James Allan Peters, Steve Wilton Byatt
  • TRANSIENT OVERVOLTAGE PROTECTION DEVICE
    Publication number: 20180190643
    Abstract: In one embodiment, an overvoltage protection device may include a semiconductor substrate comprising an n-type body region. The overvoltage protection device may further include a first p-type region disposed in a first surface region of the semiconductor substrate, and forming a first P/N junction with the n-type body region, and a second p-type region disposed in a second surface region of the semiconductor substrate opposite the first surface, and forming a second P/N junction with the n-type body region, wherein the n-type body region, first p-type region, and second p-type region form a breakdown device having a breakdown voltage greater than 100V when an external voltage is applied between the first surface region and second surface region.
    Type: Application
    Filed: March 1, 2018
    Publication date: July 5, 2018
    Applicant: LITTELFUSE, INC.
    Inventors: Gary Mark Bentley, James Allan Peters, Steve Wilton Byatt
  • Transient overvoltage protection device
    Patent number: 9941264
    Abstract: In one embodiment, an overvoltage protection device may include a semiconductor substrate comprising an n-type body region. The overvoltage protection device may further include a first p-type region disposed in a first surface region of the semiconductor substrate, and forming a first P/N junction with the n-type body region, and a second p-type region disposed in a second surface region of the semiconductor substrate opposite the first surface, and forming a second P/N junction with the n-type body region, wherein the n-type body region, first p-type region, and second p-type region form a breakdown device having a breakdown voltage greater than 100 V when an external voltage is applied between the first surface region and second surface region.
    Type: Grant
    Filed: April 3, 2015
    Date of Patent: April 10, 2018
    Assignee: Littelfuse, Inc.
    Inventors: Gary Mark Bentley, James Allan Peters, Steve Wilton Byatt
  • TRANSIENT OVERVOLTAGE PROTECTION DEVICE
    Publication number: 20160293591
    Abstract: In one embodiment, an overvoltage protection device may include a semiconductor substrate comprising an n-type body region. The overvoltage protection device may further include a first p-type region disposed in a first surface region of the semiconductor substrate, and forming a first P/N junction with the n-type body region, and a second p-type region disposed in a second surface region of the semiconductor substrate opposite the first surface, and forming a second P/N junction with the n-type body region, wherein the n-type body region, first p-type region, and second p-type region form a breakdown device having a breakdown voltage greater than 100 V when an external voltage is applied between the first surface region and second surface region.
    Type: Application
    Filed: April 3, 2015
    Publication date: October 6, 2016
    Applicant: LITTELFUSE, INC.
    Inventors: Gary Mark Bentley, James Allan Peters, Steve Wilton Byatt