Patents by Inventor Steve Y. G. Mo
Steve Y. G. Mo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9240487Abstract: A method of manufacturing a thin film transistor having a compound semiconductor with oxygen as a semiconductor layer and a method of manufacturing an organic light emitting display having the thin film transistor include: forming a gate electrode on an insulating substrate; forming a gate insulating layer on the gate electrode; forming a semiconductor layer including oxygen ions on the gate insulating layer, and including a channel region, a source region, and a drain region; forming a source electrode and a drain electrode to contact the semiconductor layer in the source region and the drain region, respectively; and forming a passivation layer on the semiconductor layer by coating an organic material, wherein a carrier density of the semiconductor layer is maintained in the range of 1E+17 to 1E+18/cm3 to have stable electrical property.Type: GrantFiled: November 7, 2008Date of Patent: January 19, 2016Assignee: Samsung Display Co., Ltd.Inventors: Hun-Jung Lee, Jae-Kyeong Jeong, Hyun-Soo Shin, Jong-Han Jeong, Jin-Seong Park, Steve Y. G. Mo
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Patent number: 8598781Abstract: An Organic Light Emitting Display (OLED) and a method of fabricating the OLED includes: a substrate including a pixel region and a non-pixel region; a gate electrode arranged in the non-pixel region of the substrate; a first insulating layer arranged on the substrate having the gate electrode formed thereon, and having an open groove on an upper surface of a region opposite to the gate electrode; a semiconductor layer buried in the groove and including a source region, a channel region and a drain region; and an organic thin film layer arranged in the pixel region of the substrate. A common electrode is arranged between the drain region of the semiconductor layer and the organic thin film layer to electrically couple the drain region to the organic thin film layer.Type: GrantFiled: December 19, 2008Date of Patent: December 3, 2013Assignee: Samsung Display Co., Ltd.Inventors: Hun-Jung Lee, Jae-Kyeong Jeong, Steve Y. G. Mo
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Patent number: 8502230Abstract: An organic light-emitting display is disclosed. In one embodiment, the display includes i) a substrate, ii) a thin film transistor formed on the substrate, and comprising i) a gate electrode, ii) an active layer electrically insulated from the gate electrode, and iii) source and drain electrodes that are electrically connected to the active layer and iii) a first electrode electrically connected to the thin film transistor. The display further includes an intermediate layer formed on the first electrode and comprising an organic emission layer and a second electrode formed on the intermediate layer, wherein the source electrode or the drain electrode has an optical blocking portion extending in the direction of substrate thickness.Type: GrantFiled: March 23, 2011Date of Patent: August 6, 2013Assignee: Samsung Display Co., Ltd.Inventors: Jong-Han Jeong, Steve Y.G. Mo, Eun-Hyun Kim, Hyun-Sun Park
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Patent number: 8247266Abstract: A thin film transistor (TFT) using an oxide semiconductor layer as an active layer, a method of manufacturing the TFT, and a flat panel display (FPD) including the TFT are taught. The TFT includes a gate electrode formed on a substrate, an oxide semiconductor layer electrically insulated from the gate electrode by a gate insulating layer, and the oxide semiconductor layer including a channel region, a source region, and a drain region, and a source electrode and a drain electrode respectively electrically contacting the source region and the drain region. The oxide semiconductor layer is formed of an InZnO or IZO layer (indium zinc oxide layer) including Zr. The carrier density of the IZO layer is controlled to be 1×1013 to 1×1018 #cm?3 by controlling an amount of Zr.Type: GrantFiled: May 6, 2011Date of Patent: August 21, 2012Assignee: Samsung Mobile Display Co., Ltd.Inventors: Jin-Seong Park, Kwang-Suk Kim, Jong-Han Jeong, Jae-Kyeong Jeong, Steve Y. G. Mo
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Patent number: 8227804Abstract: An organic light-emitting display device including: a gate electrode formed on a substrate; a first insulating layer formed on the gate electrode; an active layer formed on the first insulating layer, facing the gate electrode; a second insulating layer formed on the first insulating layer, having first openings to expose the active layer; source/drain electrodes formed on the second insulating layer, so as to be connected to exposed portions of the active layer through the first openings; and a metal layer formed on the active layer and contacting the second insulating layer.Type: GrantFiled: February 9, 2011Date of Patent: July 24, 2012Assignee: Samsung Mobile Display Co., Ltd.Inventors: Huiwon Yang, Ki-Ju Im, Chaun-Gi Choi, Eun-Hyun Kim, Steve Y. G. Mo
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Publication number: 20110297948Abstract: An organic light-emitting display is disclosed. In one embodiment, the display includes i) a substrate, ii) a thin film transistor formed on the substrate, and comprising i) a gate electrode, ii) an active layer electrically insulated from the gate electrode, and iii) source and drain electrodes that are electrically connected to the active layer and iii) a first electrode electrically connected to the thin film transistor. The display further includes an intermediate layer formed on the first electrode and comprising an organic emission layer and a second electrode formed on the intermediate layer, wherein the source electrode or the drain electrode has an optical blocking portion extending in the direction of substrate thickness.Type: ApplicationFiled: March 23, 2011Publication date: December 8, 2011Applicant: Samsung Mobile Display Co. Ltd.Inventors: Jong-Han Jeong, Steve Y.G. Mo, Eun-Hyun Kim, Hyun-Sun Park
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Publication number: 20110212580Abstract: A thin film transistor (TFT) using an oxide semiconductor layer as an active layer, a method of manufacturing the TFT, and a flat panel display (FPD) including the TFT are taught. The TFT includes a gate electrode formed on a substrate, an oxide semiconductor layer electrically insulated from the gate electrode by a gate insulating layer, and the oxide semiconductor layer including a channel region, a source region, and a drain region, and a source electrode and a drain electrode respectively electrically contacting the source region and the drain region. The oxide semiconductor layer is formed of an InZnO or IZO layer (indium zinc oxide layer) including Zr. The carrier density of the IZO layer is controlled to be 1×1013 to 1×1018 #cm?3 by controlling an amount of Zr.Type: ApplicationFiled: May 6, 2011Publication date: September 1, 2011Applicant: SAMSUNG MOBILE DISPLAY CO., LTD.Inventors: Jin-Seong Park, Kwang-Suk Kim, Jong-Han Jeong, Jae-Kyeong Jeong, Steve Y. G. Mo
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Patent number: 8008658Abstract: A thin film transistor (TFT) using an oxide semiconductor layer as an active layer, a method of manufacturing the TFT, and a flat panel display (FPD) including the TFT are taught. The TFT includes a gate electrode formed on a substrate, an oxide semiconductor layer electrically insulated from the gate electrode by a gate insulating layer, and the oxide semiconductor layer including a channel region, a source region, and a drain region, and a source electrode and a drain electrode respectively electrically contacting the source region and the drain region. The oxide semiconductor layer is formed of an InZnO or IZO layer (indium zinc oxide layer) including Zr. The carrier density of the IZO layer is controlled to be 1×1013 to 1×1018 #cm?3 by controlling an amount of Zr.Type: GrantFiled: February 4, 2009Date of Patent: August 30, 2011Assignee: Samsung Mobile Display Co., Ltd.Inventors: Jin-Seong Park, Kwang-Suk Kim, Jong-Han Jeong, Jae-Kyeong Jeong, Steve Y. G. Mo
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Publication number: 20110198584Abstract: An organic light-emitting display device including: a gate electrode formed on a substrate; a first insulating layer formed on the gate electrode; an active layer formed on the first insulating layer, facing the gate electrode; a second insulating layer formed on the first insulating layer, having first openings to expose the active layer; source/drain electrodes formed on the second insulating layer, so as to be connected to exposed portions of the active layer through the first openings; and a metal layer formed on the active layer and contacting the second insulating layer.Type: ApplicationFiled: February 9, 2011Publication date: August 18, 2011Applicant: Samsung Mobile Display Co., Ltd.Inventors: Huiwon YANG, Ki-Ju Im, Chaun-Gi Choi, Eun-Hyun Kim, Steve Y.G. Mo
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Patent number: 7876038Abstract: An organic light emitting display including: a driving thin film transistor (TFT) including a semiconductor layer on a substrate including a source electrode, a drain electrode, and an N-type oxide semiconductor; at least one insulating layer formed on the driving TFT; a pixel defining layer for defining a pixel region on the insulating layer; a cathode electrode coupled to a drain electrode of the driving TFT and patterned to correspond to the pixel region; an electron injection layer arranged over the entire surfaces of the pixel defining layer and the cathode electrode and formed of a material whose band gaps are 3.0 eV to 5.0 eV selected from the group consisting of an oxide, a nitride, a fluoride, and diamond on; an organic light emitting layer formed on the electron injection layer to correspond to the cathode region; and an anode electrode formed on the organic light emitting layer.Type: GrantFiled: November 19, 2008Date of Patent: January 25, 2011Assignee: Samsung Mobile Display Co., Ltd.Inventors: Hun-Jung Lee, Dong-Won Han, Steve Y. G. Mo
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Publication number: 20090251047Abstract: An Organic Light Emitting Display (OLED) and a method of fabricating the OLED includes: a substrate including a pixel region and a non-pixel region; a gate electrode arranged in the non-pixel region of the substrate; a first insulating layer arranged on the substrate having the gate electrode formed thereon, and having an open groove on an upper surface of a region opposite to the gate electrode; a semiconductor layer buried in the groove and including a source region, a channel region and a drain region; and an organic thin film layer arranged in the pixel region of the substrate. A common electrode is arranged between the drain region of the semiconductor layer and the organic thin film layer to electrically couple the drain region to the organic thin film layer.Type: ApplicationFiled: December 19, 2008Publication date: October 8, 2009Inventors: Hun-Jung Lee, Jae-Kyeong Jeong, Steve Y.G. Mo
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Publication number: 20090194766Abstract: A thin film transistor (TFT) using an oxide semiconductor layer as an active layer, a method of manufacturing the TFT, and a flat panel display (FPD) including the TFT are taught. The TFT includes a gate electrode formed on a substrate, an oxide semiconductor layer electrically insulated from the gate electrode by a gate insulating layer, and the oxide semiconductor layer including a channel region, a source region, and a drain region, and a source electrode and a drain electrode respectively electrically contacting the source region and the drain region. The oxide semiconductor layer is formed of an InZnO or IZO layer (indium zinc oxide layer) including Zr. The carrier density of the IZO layer is controlled to be 1×1013 to 1×1018 #cm?3 by controlling an amount of Zr.Type: ApplicationFiled: February 4, 2009Publication date: August 6, 2009Inventors: Jin-Seong Park, Kwang-Suk Kim, Jong-Han Jeong, Jae-Kyeong Jeong, Steve Y.G. Mo
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Publication number: 20090195148Abstract: An organic light emitting display including: a driving thin film transistor (TFT) including a semiconductor layer on a substrate including a source electrode, a drain electrode, and an N-type oxide semiconductor; at least one insulating layer formed on the driving TFT; a pixel defining layer for defining a pixel region on the insulating layer; a cathode electrode coupled to a drain electrode of the driving TFT and patterned to correspond to the pixel region; an electron injection layer arranged over the entire surfaces of the pixel defining layer and the cathode electrode and formed of a material whose band gaps are 3.0 eV to 5.0 eV selected from the group consisting of an oxide, a nitride, a fluoride, and diamond on; an organic light emitting layer formed on the electron injection layer to correspond to the cathode region; and an anode electrode formed on the organic light emitting layer.Type: ApplicationFiled: November 19, 2008Publication date: August 6, 2009Applicant: Samsung SDI Co., Ltd.Inventors: Hun-Jung Lee, Dong-Won Han, Steve Y.G. Mo
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Publication number: 20090155940Abstract: A method of manufacturing a thin film transistor having a compound semiconductor with oxygen as a semiconductor layer and a method of manufacturing an organic light emitting display having the thin film transistor include: forming a gate electrode on an insulating substrate; forming a gate insulating layer on the gate electrode; forming a semiconductor layer including oxygen ions on the gate insulating layer, and including a channel region, a source region, and a drain region; forming a source electrode and a drain electrode to contact the semiconductor layer in the source region and the drain region, respectively; and forming a passivation layer on the semiconductor layer by coating an organic material, wherein a carrier density of the semiconductor layer is maintained in the range of 1E+17 to 1E+18/cm3 to have stable electrical property.Type: ApplicationFiled: November 7, 2008Publication date: June 18, 2009Applicant: Samsung Mobile Display Co., Ltd.Inventors: Hun-Jung Lee, Jae-Kyeong Jeong, Hyun-Soo Shin, Jong-Han Jeong, Jin-Seong Park, Steve Y.G. Mo
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Patent number: RE46922Abstract: An organic light-emitting display is disclosed. In one embodiment, the display includes i) a substrate, ii) a thin film transistor formed on the substrate, and comprising i) a gate electrode, ii) an active layer electrically insulated from the gate electrode, and iii) source and drain electrodes that are electrically connected to the active layer and iii) a first electrode electrically connected to the thin film transistor. The display further includes an intermediate layer formed on the first electrode and comprising an organic emission layer and a second electrode formed on the intermediate layer, wherein the source electrode or the drain electrode has an optical blocking portion extending in the direction of substrate thickness.Type: GrantFiled: August 5, 2015Date of Patent: June 26, 2018Assignee: Samsung Display Co., Ltd.Inventors: Jong-Han Jeong, Steve Y.G. Mo, Eun-Hyun Kim, Hyun-Sun Park