Abstract: A process is described for removing from an integrated circuit structure photoresist remaining after a metal etch which also removes or inactivates a sufficient amount of any remaining chlorine residues remaining from the previous metal etch to inhibit corrosion of the remaining metal for at least 24 hours. The process includes a first stripping step using either O.sub.2 gas or a combination of O.sub.2 gas and N.sub.2 gas and/or a fluorocarbon gas associated with a plasma followed by a subsequent step using a combination of O.sub.2 and NH.sub.3 gases associated with a plasma. When fluorocarbon gas is used in the first stripping step, a flushing step may be used prior to introduction of the NH.sub.3 gas to flush out any remaining fluorocarbon gas. Preferably, the plasma is generated in a microwave plasma generator located upstream of the stripping chamber and the stripping gases pass through this generator so that reactive species produced from the gases in the plasma enter the stripping chamber.