Patents by Inventor Steve Zee

Steve Zee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Silicon-rich silicon nitrides as etch stops in MEMS manufacture
    Patent number: 8064124
    Abstract: The fabrication of a MEMS device such as an interferometric modulator is improved by employing an etch stop layer between a sacrificial layer and a an electrode. The etch stop may reduce undesirable over-etching of the sacrificial layer and the electrode. The etch stop layer may also serve as a barrier layer, buffer layer, and/or template layer. The etch stop layer may include silicon-rich silicon nitride.
    Type: Grant
    Filed: May 28, 2008
    Date of Patent: November 22, 2011
    Assignee: Qualcomm MEMS Technologies, Inc.
    Inventors: Wonsuk Chung, Steve Zee, Teruo Sasagawa
  • SILICON-RICH SILICON NITRIDES AS ETCH STOP IN MEMS MANUFACTURE
    Publication number: 20080226929
    Abstract: The fabrication of a MEMS device such as an interferometric modulator is improved by employing an etch stop layer between a sacrificial layer and a an electrode. The etch stop may reduce undesirable over-etching of the sacrificial layer and the electrode. The etch stop layer may also serve as a barrier layer, buffer layer, and/or template layer. The etch stop layer may include silicon-rich silicon nitride.
    Type: Application
    Filed: May 28, 2008
    Publication date: September 18, 2008
    Applicant: QUALCOMM MEMS Technologies, Inc.
    Inventors: Wonsuk Chung, Steve Zee, Teruo Sasagawa
  • Silicon-rich silicon nitrides as etch stops in MEMS manufacture
    Patent number: 7382515
    Abstract: The fabrication of a MEMS device such as an interferometric modulator is improved by employing an etch stop layer between a sacrificial layer and a an electrode. The etch stop may reduce undesirable over-etching of the sacrificial layer and the electrode. The etch stop layer may also serve as a barrier layer, buffer layer, and or template layer. The etch stop layer may include silicon-rich silicon nitride.
    Type: Grant
    Filed: January 18, 2006
    Date of Patent: June 3, 2008
    Assignee: QUALCOMM MEMS Technologies, Inc.
    Inventors: Wonsuk Chung, Steve Zee, Teruo Sasagawa
  • Silicon-rich silicon nitrides as etch stops in MEMS manufature
    Publication number: 20070170540
    Abstract: The fabrication of a MEMS device such as an interferometric modulator is improved by employing an etch stop layer between a sacrificial layer and a an electrode. The etch stop may reduce undesirable over-etching of the sacrificial layer and the electrode. The etch stop layer may also serve as a barrier layer, buffer layer, and or template layer. The etch stop layer may include silicon-rich silicon nitride.
    Type: Application
    Filed: January 18, 2006
    Publication date: July 26, 2007
    Inventors: Wonsuk Chung, Steve Zee, Teruo Sasagawa