Abstract: Described herein are compositions and methods for the production and quantification of barcoded or unique molecular identifier (UMI)-labeled substrates. In one aspect, the substrate is a bead comprising a template oligonucleotide that is elongated by successive extension reactions to provide a bead with an oligonucleotide comprising a plurality of barcodes and conserved anchor regions. Methods are also described for quantifying the amount of template oligonucleotide loaded onto the substrate and the products of the extension reaction after each round and after the final extension.

Abstract: Described herein are compositions and methods for the production and quantification of barcoded or unique molecular identifier (UMI)-labeled substrates. In one aspect, the substrate is a bead comprising a template oligonucleotide that is elongated by successive extension reactions to provide a bead with an oligonucleotide comprising a plurality of barcodes and conserved anchor regions. Methods are also described for quantifying the amount of template oligonucleotide loaded onto the substrate and the products of the extension reaction after each round and after the final extension.

Abstract: Described herein are compositions and methods for the production and quantification of barcoded or unique molecular identifier (UMI)-labeled substrates. In one aspect, the substrate is a bead comprising a template oligonucleotide that is elongated by successive extension reactions to provide a bead with an oligonucleotide comprising a plurality of barcodes and conserved anchor regions. Methods are also described for quantifying the amount of template oligonucleotide loaded onto the substrate and the products of the extension reaction after each round and after the final extension.

Abstract: Embodiments of the present invention include genetically tractable industrial yeast strains and methods for their construction. In certain preferred embodiments, the genetically tractable industrial yeast strain is a Saccharomyces cerevisiae strain, such as a derivative of the K1-V1116 wine yeast strain.

Abstract: Embodiments of the present invention include methods for the production of four carbon alcohols, specifically n-butanol, by a consolidated bioprocessing approach for the conversion of cellulosic material to the desired end product. According to some embodiments, recombinant microbial host cells are provided, preferably S. cerevisiae, that are capable of converting cellulosic material to butanol and include butanol biosynthetic pathway genes and cellulase genes. According to some embodiments, recombinant microbial host cells are provided, preferably S. cerevisiae, that are capable of converting hemicellulosic material to butanol and include cellulase genes, butanol biosynthetic pathway genes and at least one gene for the conversion of a pentose sugar.

Abstract: Embodiments of the present invention include methods for the production of ethanol, by a consolidated bioprocessing approach for the conversion of cellulosic material. According to some embodiments, recombinant microbial host cells are provided, preferably S. cerevisiae, that are capable of converting cellulosic material to ethanol and include cellulase genes. According to some embodiments, recombinant microbial host cells are provided, preferably S. cerevisiae, that are capable of converting hemicellulosic material to ethanol and include cellulase genes and at least one gene for the conversion of a pentose sugar.

Abstract: A protective cover (10) for an optical device, such as a spatial light modulator or an infrared detector or receiver. The cover (10) has an optically transmissive window (11), which has a coating (12) on one or both of its surfaces. The coating (12) is made from a halogenated material, which is deposited to form a chemical bond with the surface of the window (11).

Abstract: The present invention discloses methodologies for the treatment of the surface(s) of DNA processing devices so as to greatly reduce DNA adsorption to the surface(s) exposed to the DNA-containing media. These aforementioned surface treatments include: (i) the deposition of thin-films of silicon-rich, silicon nitride and of hydroxyl-containing,low-temperature silicon oxide and (ii) the washing of surface with a basic, oxidative wash solution. The present invention also discloses the fabrication of DNA processing devices utilizing surface(s) treated by the methods described above. Such DNA processing devices include, for example, miniaturized electrophoresis and other DNA separation devices, miniaturized PCR reactors, and the like. The present invention further discloses methodologies for testing the degree of DNA adherence to a given surface. Additionally, the methodologies and devices of the present invention are also applicable to the processing of nucleic acids, in generally.

Abstract: An integrated circuit fabrication process in which residual fluorine contamination on metal surfaces after ashing is removed by exposure to an NH.sub.3 /O.sub.2 plasma.

Abstract: A method of preventing permanent deformation of deflecting metal components of micro mechanical devices, such as hinges (12) of mirror elements (10) of a digital micro mirror device. The hinges (12) are made from a memory metal capable of undergoing austenite/martensite phase transitions. If the device is operated and the hinges (12) become mechanically distorted, the hinges (12) can be heated to cause a transition to the austenite phase and a return to their original shape.

Abstract: Apparatus and methods for precise processing of thin materials in a process chamber by the use of ellipsometer monitoring is disclosed. The process includes rapidly etching a layer 42 of material covering a semiconductor device. The process includes placing the semiconductor wafer 14 into a processing chamber 10. In a typical operation, the wafer 14 will include a selected substrate 32 having a first thin layer 30 of material covering the substrate 32 and then a second layer 42 of a different material covering the first layer 30. A process such as reactive ion anisotropic etching which rapidly etches the second layer 42 is initiated and this etching is monitored in situ by an ellipsometer in combination with a controller 28 to determine the thickness of the second layer 42' which has been achieved. Once the desired amount of second layer 42 remains, the rapid etching process stops to leave a residual layer 42' such as about 250 .ANG.

Abstract: A method of preventing adhesion of contacting surfaces of micro-mechanical devices (10). Two materials are selected that are incompatible in the sense that they have at least low solid solubility and preferably, an inability to alloy. One of these materials is used as the first contacting surface (11), and the other as the second contacting surface (17).

Abstract: A method of preventing adhesion of contacting surfaces of micro-mechanical devices (10). Two materials are selected that are incompatible in the sense that they have at least low solid solubility and preferably, an inability to alloy. One of these materials is used as the first contacting surface (11), and the other as the second contacting surface (17).

Abstract: A micro-mechanical device (10) includes relatively movable elements (11, 17) which contact or engage and which thereafter stick or adhere. A perfluoropolyether (PFPE) film (31) is applied to the contacting or engaging portions of the elements (11,17) to ameliorate or eliminate such sticking or adhesion.

Abstract: In accordance with one aspect of the present invention, a method is provided for predicting the endpoint time of a semiconductor process for a layer of a wafer (14). The endpoint time is the time at which a predetermined thickness of the layer occurs. A layer thickness, calculated for a first sample time, is received. It is then determined whether or not the layer thickness lies within a predetermined range. If the layer thickness does lie within the predetermined range, it is used to update a forecasted process rate. The forecasted process rate is used to predict the endpoint time. The endpoint time is used to control the semiconductor process so that the layer of wafer (14) is formed having the predetermined thickness.

Abstract: A direct, noncontact temperature sensor includes an ellipsometer (104-106) to determine absorptance for layered structures and a pyrometer (102) to determine emissive power and combines the two measurements to determine temperature.

Abstract: Apparatus and methods for precise processing of thin materials in a process chamber by the use of ellipsometer monitoring is disclosed. The process includes rapidly etching a layer 42 of material covering a semiconductor device. The process includes placing the semiconductor wafer 14 into a processing chamber 10. In a typical operation, the wafer 14 will include a selected substrate 32 having a first thin layer 30 of material covering the substrate 32 and then a second layer 42 of a different material covering the first layer 30. A process such as reactive ion anisotropic etching which rapidly etches the second layer 42 is initiated and this etching is monitored in situ by an ellipsometer in combination with a controller 28 to determine the thickness of the second layer 42' which has been achieved. Once the desired amount of second layer 42 remains, the rapid etching process stops to leave a residual layer 42' such as about 250 .ANG.

Abstract: An interferonmetric temperature measurement system is described for determining the temperature of a sample. The system comprises three detectors for measuring various intensities of a beam of electromagnetic radiation reflected off the sample and circuitry for determining the temperature from the intensities. The detectors measure the intensity of the beam and two orthogonally polarized components of the beam.