Abstract: A device for permanent placement across an atrial appendage ostium in a patient includes a support structure having a contracted delivery configuration and an expanded deployed configuration defining a radially enlarged portion to permanently engage an interior wall of the atrial appendage, a membrane attached to the support structure and configured to extend across the ostium of the atrial appendage when the support structure is in the expanded deployed configuration, and a polymer coating disposed on at least one of the support structure and the membrane, the polymer coating including a direct oral anticoagulant (DOAC) dispersed in a polymer.

Abstract: A movement detection device includes a signal transmission device configured to transmit a radar signal transmission toward a target area and to receive reflected radar signals, and a signal analysis device configured to analyze the reflected radar signals to detect a movement in the target area that is indicative of micro-shivering. In response to detecting the micro-shivering, the movement detection device generates an alarm.

Abstract: A method of operating an aircraft interface device may comprise receiving a request for a data dictionary from an electronic flight bag application and transmitting the data dictionary to the electronic flight bag application. The data dictionary may comprise a mapping between a plurality of parameters associated with an aircraft and a plurality of parameter identifiers. Values of the parameters may be retrieved by the aircraft interface device. The method may also include receiving a request for values of one or more of the parameters from the electronic flight bag, retrieving values of the parameters, and transmitting the values of the parameters to the electronic flight bag application.

Abstract: A method of performing fault isolation for an aircraft comprises identifying a fault that occurs during a flight of the aircraft; identifying a first set of parameters associated with the aircraft based on the identification of the fault; automatically determining values of the first set of parameters to obtain a first set of measured values; determining whether the first set of measured values are within acceptable ranges; and identifying a source of the fault based on the determination of whether the first set of measured values are within the acceptable ranges.

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate includes applying at least one of low frequency RF power or DC power to an upper electrode formed from a high secondary electron emission coefficient material disposed adjacent to a process volume; generating a plasma comprising ions in the process volume; bombarding the upper electrode with the ions to cause the upper electrode to emit electrons and form an electron beam; and applying a bias power comprising at least one of low frequency RF power or high frequency RF power to a lower electrode disposed in the process volume to accelerate electrons of the electron beam toward the lower electrode.

Abstract: A controller system including a first controller including one or more input controls and a connector. The controller system also can include a second controller including one or more input controls and a connector. The controller system additionally can include a bridge including a first connector at a first end of the bridge, a second connector at a second end of the bridge, and one or more hub connectors between the first end and the second end of the bridge. Each of the first connector, the second connector, and the one or more hub connectors can be a first connector type. Each of the connectors of the first controller and the second controller can be a second connector type configured to connect in a positionally secure manner with the first connector type. Other embodiments are described.

Abstract: A polarizer including an antenna connected to a waveguide. The waveguide including a broad wall having a cross-slot in communication with at least one port.

Abstract: A machine can include a base including a first cradle. The first cradle can include a device slot being configured to securely hold a first electronic device. The machine also can include an alignment piece hingedly attached to the base at a hinge. The alignment piece can include an alignment base configured to engage with an alignment mechanism of an overlay applicator. The machine additionally can include a pulling piece movably attached to the base. The pulling piece can be configured to remove an adhesive release liner of the overlay applicator to expose an adhesive agent of an overlay of the overlay applicator when the alignment piece is rotated relative to the base around the hinge from a first alignment piece position to a second alignment piece position. Other embodiments are described.

Abstract: A method of operating an aircraft interface device may comprise receiving a request for a data dictionary from an electronic flight bag application and transmitting the data dictionary to the electronic flight bag application. The data dictionary may comprise a mapping between a plurality of parameters associated with an aircraft and a plurality of parameter identifiers. Values of the parameters may be retrieved by the aircraft interface device. The method may also include receiving a request for values of one or more of the parameters from the electronic flight bag, retrieving values of the parameters, and transmitting the values of the parameters to the electronic flight bag application.

Abstract: A method of performing fault isolation for an aircraft comprises identifying a fault that occurs during a flight of the aircraft; identifying a first set of parameters associated with the aircraft based on the identification of the fault; automatically determining values of the first set of parameters to obtain a first set of measured values; determining whether the first set of measured values are within acceptable ranges; and identifying a source of the fault based on the determination of whether the first set of measured values are within the acceptable ranges.

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate includes applying at least one of low frequency RF power or DC power to an upper electrode formed from a high secondary electron emission coefficient material disposed adjacent to a process volume; generating a plasma comprising ions in the process volume; bombarding the upper electrode with the ions to cause the upper electrode to emit electrons and form an electron beam; and applying a bias power comprising at least one of low frequency RF power or high frequency RF power to a lower electrode disposed in the process volume to accelerate electrons of the electron beam toward the lower electrode.

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate includes applying at least one of low frequency RF power or DC power to an upper electrode formed from a high secondary electron emission coefficient material disposed adjacent to a process volume; generating a plasma comprising ions in the process volume; bombarding the upper electrode with the ions to cause the upper electrode to emit electrons and form an electron beam; and applying a bias power comprising at least one of low frequency RF power or high frequency RF power to a lower electrode disposed in the process volume to accelerate electrons of the electron beam toward the lower electrode.

Abstract: A machine including an adjustable cradle configured to hold, individually at different times, electronic devices having different dimensions. The machine also can include an alignment base configured to engage, individually at different times, with alignment mechanisms of overlay applicators. Each respective one of the overlay applicators can include a respective overlay configured to be applied to a respective surface of each of the electronic devices. The machine can be configured to facilitate applying, individually at different times, the respective overlays to the respective surfaces of the electronic devices. Other embodiments are described.

Abstract: A method of forming a transparent carbon layer on a substrate is provided. The method comprises generating an electron beam plasma above a surface of a substrate positioned over a first electrode and disposed in a processing chamber having a second electrode positioned above the first electrode. The method further comprises flowing a hydrocarbon-containing gas mixture into the processing chamber, wherein the second electrode has a surface containing a secondary electron emission material selected from a silicon-containing material and a carbon-containing material. The method further comprises applying a first RF power to at least one of the first electrode and the second electrode and forming a transparent carbon layer on the surface of the substrate.

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate includes applying at least one of low frequency RF power or DC power to an upper electrode formed from a high secondary electron emission coefficient material disposed adjacent to a process volume; generating a plasma comprising ions in the process volume; bombarding the upper electrode with the ions to cause the upper electrode to emit electrons and form an electron beam; and applying a bias power comprising at least one of low frequency RF power or high frequency RF power to a lower electrode disposed in the process volume to accelerate electrons of the electron beam toward the lower electrode.

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate includes applying at least one of low frequency RF power or DC power to an upper electrode formed from a high secondary electron emission coefficient material disposed adjacent to a process volume; generating a plasma comprising ions in the process volume; bombarding the upper electrode with the ions to cause the upper electrode to emit electrons and form an electron beam; and applying a bias power comprising at least one of low frequency RF power or high frequency RF power to a lower electrode disposed in the process volume to accelerate electrons of the electron beam toward the lower electrode.

Abstract: A plasma reactor includes a processing chamber having a lower processing portion having an axis of symmetry and an array of cavities extending upwardly from the lower processing portion. A gas distributor couples plural gas sources to a plurality of gas inlets of the cavities, and the gas distributor includes a plurality of valves with each valve selectively connecting a respective gas inlet to one of the plural gas sources. Power is applied by an array of conductors that includes a respective conductor for each respective cavity with each conductor adjacent and surrounding a cavity. A power distributor couples a power source and the array of conductors, and the power distributor includes a plurality of switches with a switch for each respective conductor.

Abstract: Techniques for establishing a establishing of a high-bandwidth data connection with an aircraft using highly directional EM beam shaped transmissions are provided. In one example, a method comprises: determining a first line of sight that is unobstructed to an antenna of an aircraft, establishing a wireless data connection having a defined data transfer rate between the aircraft and the communication device using highly directional EM beam shaped transmissions along the unobstructed line of sight, transferring a defined amount of data between the aircraft and the communication device using the wireless data connection.

Abstract: A machine can include a base including a first cradle. The first cradle can include a device slot being configured to securely hold a first electronic device. The machine also can include an alignment piece hingedly attached to the base at a hinge. The alignment piece can include an alignment base configured to engage with an alignment mechanism of an overlay applicator. The machine additionally can include a pulling piece movably attached to the base. The pulling piece can be configured to remove an adhesive release liner of the overlay applicator to expose an adhesive agent of an overlay of the overlay applicator when the alignment piece is rotated relative to the base around the hinge from a first alignment piece position to a second alignment piece position. Other embodiments are described.

Abstract: A plasma reactor includes a processing chamber having a lower processing portion having an axis of symmetry and an array of cavities extending upwardly from the lower processing portion. A gas distributor couples plural gas sources to a plurality of gas inlets of the cavities, and the gas distributor includes a plurality of valves with each valve selectively connecting a respective gas inlet to one of the plural gas sources. Power is applied by an array of conductors that includes a respective conductor for each respective cavity with each conductor adjacent and surrounding a cavity. A power distributor couples a power source and the array of conductors, and the power distributor includes a plurality of switches with a switch for each respective conductor.