Patents by Inventor Steven A. Lippy

Steven A. Lippy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240254391
    Abstract: Wet etch compositions and related methods are provided herein. A wet etch composition for molybdenum, may include phosphoric acid, acetic acid, nitric acid, and an additive for reducing an oxidation rate of a MoOx layer. The additive may be present in an amount of 0.01% to 5% by weight based on a total weight of the wet etch composition.
    Type: Application
    Filed: February 1, 2024
    Publication date: August 1, 2024
    Inventors: Hunter Patrick Hickox, Atanu K. Das, Chia-Jung Hsu, Steven A. Lippy
  • Publication number: 20230030323
    Abstract: An etchant composition and method for etching molybdenum from a microelectronic device at an etch rate are described. A microelectronic device is contacted with an etchant composition for a time sufficient to at least partially remove the molybdenum. The etchant composition comprises at least one oxidizing agent, at least one oxidizing agent stabilizer, and at least one base and has a pH of from 7.5 to 13. The etchant composition selectively removes molybdenum at an etch rate of 5-200 ?/min.
    Type: Application
    Filed: September 21, 2022
    Publication date: February 2, 2023
    Inventors: Atanu K. Das, Daniela White, Emanuel I. Cooper, Eric Hong, JeongYeol Yang, Juhee Yeo, Michael L. White, SeongJin Hong, SeungHyun Chae, Steven A. Lippy, WonLae Kim
  • Patent number: 11492709
    Abstract: An etchant composition and method for etching molybdenum from a microelectronic device at an etch rate are described. A microelectronic device is contacted with an etchant composition for a time sufficient to at least partially remove the molybdenum. The etchant composition comprises at least one oxidizing agent, at least one oxidizing agent stabilizer, and at least one base and has a pH of from 7.5 to 13. The etchant composition selectively removes molybdenum at an etch rate of 5-200 ?/min.
    Type: Grant
    Filed: April 14, 2021
    Date of Patent: November 8, 2022
    Assignee: ENTEGRIS, INC.
    Inventors: Atanu K. Das, Daniela White, Emanuel I. Cooper, Eric Hong, JeongYeol Yang, Juhee Yeo, Michael L. White, SeongJin Hong, SeungHyun Chae, Steven A. Lippy, WonLae Kim
  • Patent number: 8044009
    Abstract: A front end of the line (FEOL) stripping and cleaning composition for cleaning unashed ion-implanted photoresist from a wafer substrate comprises: a) at least one organic stripping solvent, b) fluoride ions from at least one of ammonium fluoride, ammonium bifluoride or hydrogen fluoride, c) at least one acidifying agent selected from inorganic or organic acids, and d) water, with an oxidizing agent optionally also being present in the composition.
    Type: Grant
    Filed: March 13, 2006
    Date of Patent: October 25, 2011
    Assignee: Avantor Performance Materials, Inc.
    Inventors: Sean Michael Kane, Steven A. Lippy
  • Publication number: 20080171682
    Abstract: A front end of the line (FEOL) stripping and cleaning composition for cleaning unashed ion-implanted photoresist from a wafer substrate comprises: a) at least one organic stripping solvent, b) fluoride ions from at least one of ammonium fluoride, ammonium bifluoride or hydrogen fluoride, c) at least one acidifying agent selected from inorganic or organic acids, and d) water, with an oxidizing agent optionally also being present in the composition.
    Type: Application
    Filed: March 13, 2006
    Publication date: July 17, 2008
    Inventors: Sean Michael Kane, Steven A. Lippy