Abstract: Methods for forming solar cells include forming, over a substrate, a first junction comprising at least one III-V material and having a threading dislocation density of less than approximately 107 cm?2, and forming, over the first junction, a cap layer comprising silicon, wherein the substrate consists essentially of silicon.

Abstract: In various embodiments, an array of discrete solar cells with associated devices such as bypass diodes is formed over a single substrate.

Abstract: In various embodiments, an array of discrete solar cells with associated devices such as bypass diodes is formed over a single substrate.

Abstract: In various embodiments, an array of discrete solar cells with associated devices such as bypass diodes is formed over a single substrate. In one instance, a method of forming a solar-cell array with integrated bypass diodes comprising: providing a semiconductor substrate, a first cell comprising a SiGe p-n junction or SiGe p-i-n junction, one or more second cells each comprising a III-V semiconductor p-n junction or III-V semiconductor p-i-n junction; forming a bypass diode that is discrete and laterally separate from its associated solar cell and comprises an unremoved portion of the first cell, the formation comprising removing an unremoved portion of the one or more second cells thereover.

Abstract: In various embodiments, solar cells include a junction including SiGe, a junction including at least one III-V material, and may be formed on silicon substrates and/or with silicon-based capping layers thereover.

Abstract: In various embodiments, solar cells include a junction including SiGe, a junction including at least one III-V material, and may be formed on silicon substrates and/or with silicon-based capping layers thereover.

Abstract: In various embodiments, solar cells include a junction including SiGe, a junction including at least one III-V material, and may be formed on silicon substrates and/or with silicon-based capping layers thereover.

Abstract: Methods for forming solar cells include forming, over a substrate, a first junction comprising at least one III-V material and having a threading dislocation density of less than approximately 107 cm?2, and forming, over the first junction, a cap layer comprising silicon, wherein the substrate consists essentially of silicon.

Abstract: Solar cells include a substrate consisting essentially of silicon, a first junction disposed over the substrate, the first junction comprising at least one III-V material and having a threading dislocation density of less than approximately 107 cm?2, and a cap layer disposed over the first junction, the cap layer comprising silicon.

Abstract: A hydrogen passivated photovoltaic device such as a solar cell comprises a lattice mismatched substrate such as Ge or Si, and a hydrogen passivated heteroepitaxial layer such as InP grown on the substrate. The hydrogen passivated heteroepitaxial III-V photovoltaic device is produced by exposing a sample of a heteroepitaxial III-V material grown on a lattice-mismatched substrate to reactive hydrogen species at elevated temperatures. Reactive hydrogen forms bonds with dangling bonds along dislocations defined in the sample. The electrical activity in the dislocations is passivated as a result of the hydrogenation process.