Abstract: A ceramic product includes a transparent ceramic panel having a non-planar geometry including a bend having a slippage plane, an increased haze, a non-uniform thickness, or a combination thereof. A method includes providing a transparent ceramic panel, heating the panel, bending the panel to conform to a non-planar geometry.

Abstract: A ceramic product includes a transparent ceramic panel having a non-planar geometry including a bend having a slippage plane, an increased haze, a non-uniform thickness, or a combination thereof. A method includes providing a transparent ceramic panel, heating the panel, bending the panel to conform to a non-planar geometry.

Abstract: A method and apparatus for the production of C-plane single crystal sapphire is disclosed. The method and apparatus may use edge defined film-fed growth techniques for the production of single crystal material exhibiting low polycrystallinity and/or low dislocation density.

Abstract: A ceramic product includes a transparent ceramic panel having a non-planar geometry including a bend having a slippage plane, an increased haze, a non-uniform thickness, or a combination thereof. A method includes providing a transparent ceramic panel, heating the panel, bending the panel to conform to a non-planar geometry.

Abstract: Various single crystals are disclosed including sapphire. The single crystals have desirable geometric properties, including a width not less than about 15 cm and the thickness is not less than about 0.5 cm. The single crystal may also have other features, such as a maximum thickness variation, and as-formed crystals may have a generally symmetrical neck portion, particularly related to the transition from the neck to the main body of the crystal. Methods and for forming such crystals and an apparatus for carrying out the methods are disclosed as well.

Abstract: Various single crystals are disclosed including sapphire. The single crystals have desirable geometric properties, including a width not less than about 15 cm and the thickness is not less than about 0.5 cm. The single crystal may also have other features, such as a maximum thickness variation, and as-formed crystals may have a generally symmetrical neck portion, particularly related to the transition from the neck to the main body of the crystal. Methods and for forming such crystals and an apparatus for carrying out the methods are disclosed as well.

Abstract: A scintillator crystal and a method for growing a scintillator crystal are provided which includes an as-grown Edge-defined Film-fed Growth (EFG) single crystal. The as-grown EFG single crystal has a body having a thickness, a width, and a length, such that the thickness?width<length, and the body has a cross-sectional area perpendicular to the length of not less than about 16 mm2.

Abstract: A method and apparatus for the production of r-plane single crystal sapphire is disclosed. The method and apparatus may use edge defined film-fed growth techniques for the production of single crystal material exhibiting an absence of lineage.

Abstract: Various single crystals are disclosed including sapphire. The single crystals have desirable geometric properties, including a width not less than about 15 cm and the thickness is not less than about 0.5 cm. The single crystal may also have other features, such as a maximum thickness variation, and as-formed crystals may have a generally symmetrical neck portion, particularly related to the transition from the neck to the main body of the crystal. Methods and for forming such crystals and an apparatus for carrying out the methods are disclosed as well.