Abstract: A method and system for forming a thermoelement for a thermoelectric cooler is provided. In one embodiment a substrate having a plurality of pointed tips covered by a metallic layer is formed. Portions of the metallic layer are covered by an insulator and other portions of the metallic layer are exposed. Next, a patterned layer of thermoelectric material is formed by depositions extending from the exposed portions of the metallic layer in the presence of a deposition mask. Finally, a metallic layer is formed to selectively contact the patterned layer of thermoelectric material.

Abstract: A method is provided for the manufacture of micro-structures, such as micro-electromechanical structures (MEMS) or silicon optical benches (SiOB). The method includes using a single mask to pattern two or more cavity areas to be etched into a substrate in different etching steps, and then selectively choosing the cavity areas for etching. In a preferred embodiment, the method includes patterning a substrate to identify a plurality of cavity areas to be etched into the substrate and filling at least one of the cavity areas with a distinctive filler material. Filler material is chemically distinctive in the sense that it can be etched selectively with respect to the other filling materials. At least one of the cavity areas containing a distinctive filler material is then chosen based at least in part on the distinctive filler material. The chosen cavity area is then etched.

Abstract: Aperture members are provided wherein there is thin 1-10 micrometer thick crystaline membrane that is surrounded by a frame of a bulk type crystalline material. The aperture being an opening through the membrane in a typical shape useful for device fabrication, such as a circle or pattern. The aperture member of the invention can be fabricated out of a typical silicon crystalline wafer in a process where doping in a region serves as an etch stop.

Abstract: Method and apparatus for thermal management of an integrated circuit. A semiconductor device includes an integrated circuit and an integrated thermoelectric cooler formed on a common substrate. A semiconductor device is fabricated by forming an integrated circuit on a front side of the substrate and forming an integrated thermoelectric cooler on a back side of the substrate. A first thermal sink of semiconductor material capable of absorbing heat from the integrated circuit is formed on the back side of the substrate. N-type thermoelectric elements are formed on contacts formed on the first thermal sink. P-type thermoelectric elements are formed on contacts formed on a second thermal sink of semiconductor material capable of dissipating heat. The p-type and n-type thermoelectric elements are bonded to the contacts on the first and second thermal sinks, respectively, by a flip-chip soldering process.

Abstract: In the invention a pellicle mounting structural principle is provided whereby a membrane for protection of an X-ray mask is interchangeably positioned with proper spacing between the X-ray mask and the resist on the wafer in which the pattern produced by the X-ray exposure is to be formed. The mounting principle employs a combined assembly of, a membrane and spacer member subassembly together with a means for seectably separable retention to the supporting structural portion of the mask The principle accommodates membrane materials that may not be flexible and provides an ability to remove the membrane for cleaning or replacement and to removal and reassembly with ease in reestablishing the spacing with respect to the mask. The means for the selectably separable retention to the supporting structural portion of the mask involves the use of springs and elastomers, securing to the sides of the supporting structural mask ring and the bonding of the spacer member directly to the mask.