Abstract: According to some embodiments, a memory controller may be provided. A compute-in-memory array may be connected to a plurality of word lines of the memory controller, with multiple word lines per word being associated with different temperature coefficients, to facilitate temperature compensation of the compute-in-memory array. In some embodiments, the compute-in-memory array may be associated with parameter floating-gate transistors. Moreover, a plurality of compute-in-memory arrays may be individually programmed to several orders of parameter magnitude.