Patents by Inventor Steven Anthony Zanella

Steven Anthony Zanella has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MELT FIXTURE AND A SAPPHIRE COMPONENT
    Publication number: 20180223446
    Abstract: Various single crystals are disclosed including sapphire. The single crystals have desirable geometric properties, including a width not less than about 15 cm and the thickness is not less than about 0.5 cm. The single crystal may also have other features, such as a maximum thickness variation, and as-formed crystals may have a generally symmetrical neck portion, particularly related to the transition from the neck to the main body of the crystal. Methods and for forming such crystals and an apparatus for carrying out the methods are disclosed as well.
    Type: Application
    Filed: March 29, 2018
    Publication date: August 9, 2018
    Inventors: John Walter Locher, Steven Anthony Zanella, Ralph Lampson MacLean, JR., Herbert Ellsworth Bates
  • Method of making a sapphire component including machining a sapphire single crystal
    Patent number: 9963800
    Abstract: Various single crystals are disclosed including sapphire. The single crystals have desirable geometric properties, including a width not less than about 15 cm and the thickness is not less than about 0.5 cm. The single crystal may also have other features, such as a maximum thickness variation, and as-formed crystals may have a generally symmetrical neck portion, particularly related to the transition from the neck to the main body of the crystal. Methods and for forming such crystals and an apparatus for carrying out the methods are disclosed as well.
    Type: Grant
    Filed: September 18, 2017
    Date of Patent: May 8, 2018
    Assignee: SAINT-GOBAIN CERAMICS & PLASTICS, INC.
    Inventors: John Walter Locher, Steven Anthony Zanella, Ralph Lampson MacLean, Jr., Herbert Ellsworth Bates
  • Method of forming a single crystal sheet using a die having a thermal gradient along its length
    Patent number: 9926645
    Abstract: Various single crystals are disclosed including sapphire. The single crystals have desirable geometric properties, including a width not less than about 15 cm and the thickness is not less than about 0.5 cm. The single crystal may also have other features, such as a maximum thickness variation, and as-formed crystals may have a generally symmetrical neck portion, particularly related to the transition from the neck to the main body of the crystal. Methods and for forming such crystals and an apparatus for carrying out the methods are disclosed as well.
    Type: Grant
    Filed: April 17, 2017
    Date of Patent: March 27, 2018
    Assignee: SAINT-GOBAIN CERAMICS & PLASTICS, INC.
    Inventors: John Walter Locher, Steven Anthony Zanella, Ralph Lampson MacLean, Jr., Herbert Ellsworth Bates
  • METHOD OF MAKING A SAPPHIRE COMPONENT
    Publication number: 20180016704
    Abstract: Various single crystals are disclosed including sapphire. The single crystals have desirable geometric properties, including a width not less than about 15 cm and the thickness is not less than about 0.5 cm. The single crystal may also have other features, such as a maximum thickness variation, and as-formed crystals may have a generally symmetrical neck portion, particularly related to the transition from the neck to the main body of the crystal. Methods and for forming such crystals and an apparatus for carrying out the methods are disclosed as well.
    Type: Application
    Filed: September 18, 2017
    Publication date: January 18, 2018
    Inventors: John Walter Locher, Steven Anthony Zanella, Ralph Lampson MacLean, JR., Herbert Ellsworth Bates
  • APPARATUS AND A METHOD OF FORMING A SINGLE CRYSTAL SHEET
    Publication number: 20170342591
    Abstract: Various single crystals are disclosed including sapphire. The single crystals have desirable geometric properties, including a width not less than about 15 cm and the thickness is not less than about 0.5 cm. The single crystal may also have other features, such as a maximum thickness variation, and as-formed crystals may have a generally symmetrical neck portion, particularly related to the transition from the neck to the main body of the crystal. Methods and for forming such crystals and an apparatus for carrying out the methods are disclosed as well.
    Type: Application
    Filed: April 17, 2017
    Publication date: November 30, 2017
    Inventors: John Walter Locher, Steven Anthony Zanella, Ralph Lampson MacLean, JR., Herbert Ellsworth Bates
  • APPARATUS FOR FORMING SINGLE CRYSTAL SAPPHIRE
    Publication number: 20170183792
    Abstract: An apparatus for production of single crystal sapphire is disclosed. The apparatus can include a die and an insulated chimney mounted above the die. The die can be in a first active heat zone. The chimney can include a second heat zone. The apparatus may be used in edge defined film-fed growth techniques for the production of single crystal material exhibiting an absence of lineage.
    Type: Application
    Filed: August 2, 2016
    Publication date: June 29, 2017
    Inventors: Guilford L. Mack, III, Christopher D. Jones, Fery Pranadi, John Walter Locher, Steven Anthony Zanella, Herbert Ellsworth Bates
  • C-plane sapphire method and apparatus
    Patent number: 8652658
    Abstract: A method and apparatus for the production of C-plane single crystal sapphire is disclosed. The method and apparatus may use edge defined film-fed growth techniques for the production of single crystal material exhibiting low polycrystallinity and/or low dislocation density.
    Type: Grant
    Filed: September 21, 2007
    Date of Patent: February 18, 2014
    Assignee: Saint-Gobain Ceramics & Plastics, Inc.
    Inventors: Vitali Tatartchenko, Christopher D. Jones, Steven Anthony Zanella, John W. Locher, Fery Pranadi
  • METHOD OF FORMING AN R-PLANE SAPPHIRE CRYSTAL
    Publication number: 20140017479
    Abstract: A method and apparatus for the production of r-plane single crystal sapphire is disclosed. The method and apparatus may use edge defined film-fed growth techniques for the production of single crystal material exhibiting an absence of lineage.
    Type: Application
    Filed: September 19, 2013
    Publication date: January 16, 2014
    Inventors: Guilford L. Mack, III, Christopher D. Jones, Fery Pranadi, John Walter Locher, Steven Anthony Zanella, Herbert Ellsworth Bates
  • MELT FIXTURE INCLUDING THERMAL SHIELDS HAVING A STEPPED CONFIGURATION AND A METHODS OF USING THE SAME
    Publication number: 20120145069
    Abstract: Various single crystals are disclosed including sapphire. The single crystals have desirable geometric properties, including a width not less than about 15 cm and the thickness is not less than about 0.5 cm. The single crystal may also have other features, such as a maximum thickness variation, and as-formed crystals may have a generally symmetrical neck portion, particularly related to the transition from the neck to the main body of the crystal. Methods and for forming such crystals and an apparatus for carrying out the methods are disclosed as well.
    Type: Application
    Filed: February 14, 2012
    Publication date: June 14, 2012
    Applicant: SAINT-GOBAIN CERAMICS & PLASTICS, INC.
    Inventors: John Walter Locher, Steven Anthony Zanella, Ralph Lampson MacLean, JR., Herbert Ellsworth Bates
  • SINGLE CRYSTALS AND METHODS FOR FABRICATING SAME
    Publication number: 20100282160
    Abstract: Various single crystals are disclosed including sapphire. The single crystals have desirable geometric properties, including a width not less than about 15 cm and the thickness is not less than about 0.5 cm. The single crystal may also have other features, such as a maximum thickness variation, and as-formed crystals may have a generally symmetrical neck portion, particularly related to the transition from the neck to the main body of the crystal. Methods and for forming such crystals and an apparatus for carrying out the methods are disclosed as well.
    Type: Application
    Filed: January 29, 2008
    Publication date: November 11, 2010
    Applicant: SAINT-GOBAIN CERAMICS & PLASTICS, INC.
    Inventors: John Walter Locher, Steven Anthony Zanella, Ralph Lampson MacLean, JR., Herbert Ellsworth Bates
  • C-PLANE SAPPHIRE METHOD AND APPARATUS
    Publication number: 20080075941
    Abstract: A method and apparatus for the production of C-plane single crystal sapphire is disclosed. The method and apparatus may use edge defined film-fed growth techniques for the production of single crystal material exhibiting low polycrystallinity and/or low dislocation density.
    Type: Application
    Filed: September 21, 2007
    Publication date: March 27, 2008
    Inventors: Vitali Tatartchenko, Christopher D. Jones, Steven Anthony Zanella, John W. Locher, Fery Pranadi
  • Single crystals and methods for fabricating same
    Patent number: 7348076
    Abstract: Various single crystals are disclosed including sapphire. The single crystals have desirable geometric properties, including a width not less than about 15 cm and the thickness is not less than about 0.5 cm. The single crystal may also have other features, such as a maximum thickness variation, and as-formed crystals may have a generally symmetrical neck portion, particularly related to the transition from the neck to the main body of the crystal. Methods and for forming such crystals and an apparatus for carrying out the methods are disclosed as well.
    Type: Grant
    Filed: April 8, 2004
    Date of Patent: March 25, 2008
    Assignee: Saint-Gobain Ceramics & Plastics, Inc.
    Inventors: John Walter Locher, Steven Anthony Zanella, Ralph Lampson MacLean, Jr., Herbert Ellsworth Bates
  • Single crystals and methods for fabricating same
    Patent number: RE43469
    Abstract: Various single crystals are disclosed including sapphire. The single crystals have desirable geometric properties, including a width not less than about 15 cm and the thickness is not less than about 0.5 cm. The single crystal may also have other features, such as a maximum thickness variation, and as-formed crystals may have a generally symmetrical neck portion, particularly related to the transition from the neck to the main body of the crystal. Methods and for forming such crystals and an apparatus for carrying out the methods are disclosed as well.
    Type: Grant
    Filed: October 21, 2009
    Date of Patent: June 12, 2012
    Assignee: Saint-Gobain Ceramics & Plastics, Inc.
    Inventors: John Walter Locher, Steven Anthony Zanella, Ralph Lampson MacLean, Herbert Ellsworth Bates