Abstract: An object carrier, a system and a method is disclosed for the back light inspection of transparent or semitransparent objects. The carrier has a carrier base layer with photo luminescent properties which carries the transparent or semitransparent object on top of the layer. The transparent or semitransparent object could be a wafer and the object carrier could be a wafer chuck. At least one light source being arranged above the object carrier such that excitation light emitted from the at least one light source is directed through the transparent or semitransparent object to the layer with photo luminescent properties. The light returned from the layer with photo luminescent properties is collected by an objective and registered by a sensor.

Abstract: A method and apparatus for the inspection of light emitting semiconductor devices. The semiconductor device is illuminated with a light source, wherein at least an area of the light emitting semiconductor is illuminated with a waveband of light. The waveband of light ?A+?B can generate electron-hole pairs in the light emitting semiconductor to be inspected. Through an objective lens at least a part of the light ?C emitted by the light emitting semiconductor is detected. The emitted light is captured with a sensor of a camera that is sensitive to wavelengths of the emitted light, wherein the wavelength of the emitted light is above the width of the waveband. The data of the emitted light, captured with the sensor, are transmitted to a computer system for calculating inspection results of the light emitting semiconductor.

Abstract: An object carrier, a system and a method is disclosed for the back light inspection of transparent or semitransparent objects. The carrier has a carrier base layer with photo luminescent properties which carries the transparent or semitransparent object on top of the layer. The transparent or semitransparent object could be a wafer and the object carrier could be a wafer chuck. At least one light source being arranged above the object carrier such that excitation light emitted from the at least one light source is directed through the transparent or semitransparent object to the layer with photo luminescent properties. The light returned from the layer with photo luminescent properties is collected by an objective and registered by a sensor.

Abstract: A method is disclosed for producing Group III-N field-effect devices, such as HEMT, MOSHFET, MISHFET or MESFET devices, comprising two active layers, e.g. a GaN/AlGaN layer. The method produces an enhancement mode device of this type, i.e. a normally-off device, by providing a passivation layer on the AlGaN layer, etching a hole in the passivation layer and not in the layers underlying the passivation layer, and depositing the gate contact in the hole, while the source and drain are deposited directly on the passivation layer. The characteristics of the active layers and/or of the gate are chosen such that no two-dimensional electron gas layer is present underneath the gate, when a zero voltage is applied to the gate. A device with this behavior is also disclosed.

Abstract: A method is disclosed for producing Group III-N field-effect devices, such as HEMT, MOSHFET, MISHFET or MESFET devices, comprising two active layers, e.g. a GaN/AlGaN layer. The method produces an enhancement mode device of this type, i.e. a normally-off device, by providing a passivation layer on the AlGaN layer, etching a hole in the passivation layer and not in the layers underlying the passivation layer, and depositing the gate contact in the hole, while the source and drain are deposited directly on the passivation layer. The characteristics of the active layers and/or of the gate are chosen such that no two-dimensional electron gas layer is present underneath the gate, when a zero voltage is applied to the gate. A device with this behavior is also disclosed.

Abstract: A method and apparatus for the inspection of light emitting semiconductor devices. The semiconductor device is illuminated with a light source, wherein at least an area of the light emitting semiconductor is illuminated with a waveband of light. The waveband of light ?A+?B can generate electron-hole pairs in the light emitting semiconductor to be inspected. Through an objective lens at least a part of the light ?C emitted by the light emitting semiconductor is detected. The emitted light is captured with a sensor of a camera that is sensitive to wavelengths of the emitted light, wherein the wavelength of the emitted light is above the width of the waveband. The data of the emitted light, captured with the sensor, are transmitted to a computer system for calculating inspection results of the light emitting semiconductor.

Abstract: A method is disclosed for producing Group III-N field-effect devices, such as HEMT, MOSHFET, MISHFET or MESFET devices, comprising two active layers, e.g. a GaN/AlGaN layer. The method produces an enhancement mode device of this type, i.e. a normally-off device, by providing a passivation layer on the AlGaN layer, etching a hole in the passivation layer and not in the layers underlying the passivation layer, and depositing the gate contact in the hole, while the source and drain are deposited directly on the passivation layer. The characteristics of the active layers and/or of the gate are chosen such that no two-dimensional electron gas layer is present underneath the gate, when a zero voltage is applied to the gate. A device with this behavior is also disclosed.