Patents by Inventor STEVEN BORICHEVSKY

STEVEN BORICHEVSKY has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Techniques for improving extracted ion beam quality using high-transparency electrodes
    Patent number: 8466431
    Abstract: Techniques for improving extracted ion beam quality using high-transparency electrodes are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation. The apparatus may comprise an ion source for generating an ion beam, wherein the ion source comprises a faceplate with an aperture for the ion beam to travel therethrough. The apparatus may also comprise a set of extraction electrodes comprising at least a suppression electrode and a high-transparency ground electrode, wherein the set of extraction electrodes may extract the ion beam from the ion source via the faceplate, and wherein the high-transparency ground electrode may be configured to optimize gas conductance between the suppression electrode and the high-transparency ground electrode for improved extracted ion beam quality.
    Type: Grant
    Filed: February 12, 2009
    Date of Patent: June 18, 2013
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: James S. Buff, Svetlana Radovanov, Bon-Woong Koo, Wilhelm Platow, Frank Sinclair, D. Jeffrey Lischer, Craig R. Chaney, Steven Borichevsky, Eric R. Cobb, Mayur Jagtap, Kenneth H. Purser, Victor Benveniste, Shardul S. Patel
  • TECHNIQUES FOR IMPROVING EXTRACTED ION BEAM QUALITY USING HIGH-TRANSPARENCY ELECTRODES
    Publication number: 20100200768
    Abstract: Techniques for improving extracted ion beam quality using high-transparency electrodes are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation. The apparatus may comprise an ion source for generating an ion beam, wherein the ion source comprises a faceplate with an aperture for the ion beam to travel therethrough. The apparatus may also comprise a set of extraction electrodes comprising at least a suppression electrode and a high-transparency ground electrode, wherein the set of extraction electrodes may extract the ion beam from the ion source via the faceplate, and wherein the high-transparency ground electrode may be configured to optimize gas conductance between the suppression electrode and the high-transparency ground electrode for improved extracted ion beam quality.
    Type: Application
    Filed: February 12, 2009
    Publication date: August 12, 2010
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: JAMES BUFF, SVETLANA RADOVANOV, BON-WOONG KOO, WILHELM PLATOW, FRANK SINCLAIR, JEFFREY D. LISCHER, CRAIG CHANEY, STEVEN BORICHEVSKY, ERIC R. COBB, MAYUR JAGTAP, KENNETH PURSER, VICTOR M. BENVENISTE, SHARDUL S. PATEL