Abstract: A sign switching circuitry is disclosed. In one aspect, the sign switching circuitry includes a first and second differential common-source amplifier having common differential input nodes and common differential output nodes configured such that a differential input signal applied at the common differential input nodes is amplified to a differential output signal at the common differential output nodes with a fixed gain by the first amplifier and by the fixed gain with opposite sign by the second amplifier. The sign switching circuitry also includes a switching circuitry configured to activate the first common-source amplifier and deactivate the second common-source amplifier to amplify the differential input signal by the fixed gain, and to activate the second common-source amplifier and deactivate the first common-source amplifier to amplify the differential input signal by the fixed gain with opposite sign.

Abstract: A package includes a metal plate and a carrier substrate mounted on the top surface thereof, which includes one or more superconducting chips mounted on the carrier substrate or configured to receive the one or more chips mounted thereon. The carrier substrate and the plate are sandwiched between the planar portions of a first and second magnetic shield structure, at least the first structure including a planar portion and a receptacle-shaped shell portion arranged above and around the chip location. The package includes one or more pillars formed of a magnetic shielding material which are clamped between the planar portions of the shield structures, wherein the one or more pillars are penetrating the carrier substrate and the metal support plate, and wherein the one or more pillars are in physical contact with both of the planar portions.

Abstract: A qubit device includes first and second linear qubit arrays. Each qubit array includes a semiconductor substrate, control gates configured to define a single row of quantum dots along the substrate, and nanomagnets distributed along the row of quantum dots such that a nanomagnet is arranged at every other pair of quantum dots of the row of quantum dots. Each nanomagnet has an out-of-plane magnetization with respect to the substrate, where the rows of the first and second arrays extend in a common row direction and are separated along a direction transverse to the row direction. The qubit device further includes superconducting resonators connecting pairs of quantum dots between the first and second arrays. Each pair of quantum dots in the first array is configured to couple with a superconducting resonator of the first set to connect with a different pair of quantum dots of the second array.

Abstract: A digitally controlled variable gain amplifier (VGA) for generating amplification output levels is disclosed. In one aspect, the digitally controlled VGA includes a positive amplification stage including at least two positive amplifiers, and a corresponding negative amplification stage coupled to the positive amplification stage. The negative amplification stage includes at least two negative amplifiers. The positive amplification stage and the corresponding negative amplification stage are digitally controlled by one or more digital codes. The corresponding negative amplification stage is coupled in parallel with the positive amplification stage and is equally weighted as the positive amplification stage, and both the positive amplification stage and the corresponding negative amplification stage selectively contribute to the generation of the amplification output levels for the digitally controlled VGA.

Abstract: An integrated system for quantum computation is provided, In one aspect, the system includes at least one semiconductor spin quantum bit (qubit); a feedline configured to act as an electron spin resonance (ESR) antenna for control of the at least one qubit; at least one resonator; and a ground plane common to both the feedline and the at least one resonator. The at least one resonator is capacitively coupled to the feedline, and configured for readout of the at least one qubit via the feedline. The feedline and the at least one resonator are arranged in adjacent layers separated by at least a dielectric. A corresponding method of performing quantum computation using such an integrated system is also provided.

Abstract: A sign switching circuitry is disclosed. In one aspect, the sign switching circuitry includes a first and second differential common-source amplifier having common differential input nodes and common differential output nodes configured such that a differential input signal applied at the common differential input nodes is amplified to a differential output signal at the common differential output nodes with a fixed gain by the first amplifier and by the fixed gain with opposite sign by the second amplifier. The sign switching circuitry also includes a switching circuitry configured to activate the first common-source amplifier and deactivate the second common-source amplifier to amplify the differential input signal by the fixed gain, and to activate the second common-source amplifier and deactivate the first common-source amplifier to amplify the differential input signal by the fixed gain with opposite sign.

Abstract: A digitally controlled variable gain amplifier (VGA) for generating amplification output levels is disclosed. In one aspect, the digitally controlled VGA includes a positive amplification stage including at least two positive amplifiers, and a corresponding negative amplification stage coupled to the positive amplification stage. The negative amplification stage includes at least two negative amplifiers. The positive amplification stage and the corresponding negative amplification stage are digitally controlled by one or more digital codes. The corresponding negative amplification stage is coupled in parallel with the positive amplification stage and is equally weighted as the positive amplification stage, and both the positive amplification stage and the corresponding negative amplification stage selectively contribute to the generation of the amplification output levels for the digitally controlled VGA.

Abstract: Disclosed are methods and devices for measuring electromagnetic properties of samples. In one embodiment, a device is disclosed that includes a substantially two-dimensional measurement chamber comprising a reflective surface, where the reflective surface has a substantially elliptical shape that forms a part of an ellipse having a first focal point and a second focal point. The device further includes an input/output port located at the first focal point and a sample holder located at the second focal point.

Abstract: A method of bonding two elements such as wafers used in microelectronics applications is disclosed. One inventive aspect relates to a method for bonding comprising producing on a first main surface of a first element a first solder ball, producing on a first main surface of a second element a second solder ball, providing contact between the first solder ball and the second solder ball, bonding the first element and the second element by applying a reflow act whereby the solder balls melt and form a joined solder ball structure. Prior to the bonding, the first solder ball is laterally embedded in a nonconductive material, such that the upper part of the first solder ball is not covered by the non-conductive material. Devices related to such methods are also disclosed.

Abstract: A method of bonding two elements such as wafers used in microelectronics applications is disclosed. One inventive aspect relates to a method for bonding comprising producing on a first main surface of a first element a first solder ball, producing on a first main surface of a second element a second solder ball, providing contact between the first solder ball and the second solder ball, bonding the first element and the second element by applying a reflow act whereby the solder balls melt and form a joined solder ball structure. Prior to the bonding, the first solder ball is laterally embedded in a nonconductive material, such that the upper part of the first solder ball is not covered by the non-conductive material. Devices related to such methods are also disclosed.

Abstract: A method of bonding two elements such as wafers used in microelectronics applications is disclosed. One inventive aspect relates to a method for bonding comprising producing on a first main surface of a first element a first solder ball, producing on a first main surface of a second element a second solder ball, providing contact between the first solder ball and the second solder ball, bonding the first element and the second element by applying a reflow act whereby the solder balls melt and form a joined solder ball structure. Prior to the bonding, the first solder ball is laterally embedded in a nonconductive material, such that the upper part of the first solder ball is not covered by the non-conductive material. Devices related to such methods are also disclosed.

Abstract: A method of bonding two elements such as wafers used in microelectronics applications is disclosed. One inventive aspect relates to a method for bonding comprising producing on a first main surface of a first element a first solder ball, producing on a first main surface of a second element a second solder ball, providing contact between the first solder ball and the second solder ball, bonding the first element and the second element by applying a reflow act whereby the solder balls melt and form a joined solder ball structure. Prior to the bonding, the first solder ball is laterally embedded in a nonconductive material, such that the upper part of the first solder ball is not covered by the non-conductive material. Devices related to such methods are also disclosed.

Abstract: A millimeter or microwave oscillator device for a receiver or a transmitter is described. The oscillator device including a high frequency oscillating circuit including an active device 41; said active device 41 having a first and a second contact 56, 52, a signal line 49 of said oscillator device 41 being connected to said first contact 56 for connection to a load circuit 43; a biasing circuit 47 for said active device; and a low frequency oscillation suppression circuit; wherein said low frequency oscillation suppression circuit includes a decoupling capacitor 45 and one electrode of said decoupling capacitor 45 is connected to said second contact 52. A manufacturing method for the oscillator device is also disclosed.