Abstract: A bonded structure formed by a low-temperature bonding method comprises a first substrate bonded to a second substrate by a conductive layer comprising a metal. The conductive layer includes a first interfacial portion adjacent to the first substrate, a second interfacial portion adjacent to the second substrate, and a central portion between the first and second interfacial portions. The first and second interfacial portions comprise an interfacial conductivity of from about 1% to about 20% of a bulk conductivity of the metal, and the central portion comprises from greater than 20% to about 80% of the bulk conductivity of the metal. The bonded structure comprises a bond strength of from about 10 lbf to about 200 lbf.

Abstract: The present invention provides an ink composition. The composition comprises a metal ion and a ligand. The ink composition is in a form of solid at a temperature of less than about 30° C. and in a form of liquid at temperature of above about 40 to about 80° C.