Abstract: One embodiment of the present invention provides a gas-delivery system for delivering reaction gas to a reactor chamber. The gas-delivery system includes a main gas-inlet port for receiving reaction gases and a gas-delivery plate that includes a plurality of gas channels. A gas channel includes a plurality of gas holes for allowing the reaction gases to enter the reactor chamber from the gas channel. The gas-delivery system further includes a plurality of sub-gas lines coupling together the main gas-inlet port and the gas-delivery plate, and a respective sub-gas line is configured to deliver a portion of the received reaction gases to a corresponding gas channel.

Abstract: One embodiment of the present invention provides a support system for providing dynamic support to a deposition reactor. The system includes a coupling mechanism configured to provide coupling between the deposition reactor and the support system, an attachment mechanism configured to attach the support system to an external frame, and at least one gas bellows situated between the coupling mechanism and the attachment mechanism.

Abstract: One embodiment of the present invention provides a support system for providing dynamic support to a deposition reactor. The system includes a coupling mechanism configured to provide coupling between the deposition reactor and the support system, an attachment mechanism configured to attach the support system to an external frame, and at least one gas bellows situated between the coupling mechanism and the attachment mechanism.

Abstract: A rapid thermal process reactor includes a vessel having a dome assembly. The vessel bounds a reactor chamber for rapid thermal processing of one or more substrates. The dome assembly includes a low profile dome and a flange surrounding and abutting the low profile dome. The flange includes a top surface; a bottom surface, removed from and opposite the top surface; an outer circumferential edge surface connecting the top surface and the bottom surface; and an inner edge surface, opposite and removed from said outer circumferential edge, including a portion abutting said low profile dome. The rapid thermal process reactor also includes a radiant heat source; a gas ring mounted about a sidewall of the vessel; a gas ring shield mounted as part of the sidewall of the vessel; a clamp ring to clamp the dome assembly in place; and a clamp ring shield mounted on the clamp ring.

Abstract: One embodiment of the present invention provides a wafer-carrier system used in a deposition chamber for carrying wafers. The wafer-carrier system includes a base susceptor and a top susceptor nested inside the base susceptor with its wafer-mounting side facing the base susceptor's wafer-mounting side, thereby forming a substantially enclosed narrow channel. The base susceptor provides an upward support to the top susceptor.

Abstract: One embodiment of the present invention provides a wafer-carrier system used in a deposition chamber for carrying wafers. The wafer-carrier system includes a base susceptor and a top susceptor nested inside the base susceptor with its wafer-mounting side facing the base susceptor's wafer-mounting side, thereby forming a substantially enclosed narrow channel. The base susceptor provides an upward support to the top susceptor.

Abstract: One embodiment of the present invention provides a gas-delivery system for delivering reaction gas to a reactor chamber. The gas-delivery system includes a main gas-inlet port for receiving reaction gases and a gas-delivery plate that includes a plurality of gas channels. A gas channel includes a plurality of gas holes for allowing the reaction gases to enter the reactor chamber from the gas channel. The gas-delivery system further includes a plurality of sub-gas lines coupling together the main gas-inlet port and the gas-delivery plate, and a respective sub-gas line is configured to deliver a portion of the received reaction gases to a corresponding gas channel.

Abstract: One embodiment of the present invention provides a support system for providing dynamic support to a deposition reactor. The system includes a coupling mechanism configured to provide coupling between the deposition reactor and the support system, an attachment mechanism configured to attach the support system to an external frame, and at least one gas bellows situated between the coupling mechanism and the attachment mechanism.

Abstract: Semiconductor processing tools in a semiconductor processing facility are coupled to communicate with a power management system. The power management system monitors the power consumption status of each of the semiconductor processing tools. Using the power consumption status of each of the semiconductor processing tools, the power management system stages the operation of the semiconductor processing tools so as to maintain the power consumption of the semiconductor processing facility below a predefined maximum power consumption. Limiting the power consumption to less than the predefined maximum power consumption reduces the per die processing costs without incurring the expense of building a new semiconductor processing facility or without modifying the semiconductor processing tools for larger batch sizes or for greater throughput.