Abstract: A first linear combination of a local moving aggregated quantity derived from a WIP distribution and a global aggregated quantity derived from the WIP distribution is calculated for each range for a given product type in a manufacturing line. The first linear combination serves as a first throughput target for the range and product. A second linear combination of a standard deviation of the non-zero portion of the WIP distribution and the global aggregated quantity is calculated for the product type in the manufacturing line. The coefficients of this second linear combination are predetermined. This second linear combination serves as a second throughput target. A throughput target for each range is determined by determining the minimum of the first throughput target, which can be different for each range, and the second throughput target, which is common across all ranges.

Abstract: A first linear combination of a local moving aggregated quantity derived from a WIP distribution and a global aggregated quantity derived from the WIP distribution is calculated for each range for a given product type in a manufacturing line. The first linear combination serves as a first throughput target for the range and product. A second linear combination of a standard deviation of the non-zero portion of the WIP distribution and the global aggregated quantity is calculated for the product type in the manufacturing line. The coefficients of this second linear combination are predetermined. This second linear combination serves as a second throughput target. A throughput target for each range is determined by determining the minimum of the first throughput target, which can be different for each range, and the second throughput target, which is common across all ranges.

Abstract: A method for creating a testing pattern for sampling the sheet resistance of a test wafer for tuning an annealing process includes establishing a center point for the wafer and determining a plurality of sample points having a radial displacement from the center point of the wafer and an angular displacement, the radial displacement of successive sample points decreasing in radial distance from one another as the distance from the center point increases and the angular displacement between each successive sample point being constant.