Patents by Inventor Steven C. Hussey

Steven C. Hussey has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10777362
    Abstract: An improved capacitor, and method of manufacturing the improved capacitor, is provided. The method includes deoxygenating and leaching the anode wire to produce a capacitor comprising an anode having a surface area of at least 4.0 m2/g or a charge density of at least 200,000 CV/g with the anode wire having an equivalent diameter of less than 0.30 mm extending from said anode. A dielectric is on the anode and a cathode is on the dielectric.
    Type: Grant
    Filed: November 15, 2019
    Date of Patent: September 15, 2020
    Assignee: KEMET Electronics Corporation
    Inventors: Steven C. Hussey, Yuri Freeman, Christian Guerrero, Chris Stolarski, Jeffrey N. Kelly, Philip M. Lessner, Siva Jyoth Lingala, Javaid Qazi
  • Publication number: 20200090875
    Abstract: An improved capacitor, and method of manufacturing the improved capacitor, is provided. The method includes deoxygenating and leaching the anode wire to produce a capacitor comprising an anode having a surface area of at least 4.0 m2/g or a charge density of at least 200,000 CV/g with the anode wire having an equivalent diameter of less than 0.30 mm extending from said anode. A dielectric is on the anode and a cathode is on the dielectric.
    Type: Application
    Filed: November 15, 2019
    Publication date: March 19, 2020
    Inventors: Steven C. Hussey, Yuri Freeman, Christian Guerrero, Chris Stolarski, Jeffrey N. Kelly, Philip M. Lessner, Siva Jyoth Lingala, Javaid Qazi
  • Publication number: 20190287730
    Abstract: An improved capacitor, and method of manufacturing the improved capacitor, is provided. The method includes deoxygenating and leaching the anode wire to produce a capacitor comprising an anode having a surface area of at least 4.0 m2/g or a charge density of at least 200,000 CV/g with the anode wire having an equivalent diameter of less than 0.30 mm extending from said anode. A dielectric is on the anode and a cathode is on the dielectric.
    Type: Application
    Filed: March 15, 2018
    Publication date: September 19, 2019
    Inventors: Steven C. Hussey, Yuri Freeman, Christian Guerrero, Chris Stolarski, Jeffrey N. Kelly, Philip M. Lessner, Siva Jyoth Lingala, Javaid Qazi
  • Patent number: 10062519
    Abstract: An improved capacitor and a method for forming an improved capacitor is detailed. The method comprises forming a tantalum anode from a tantalum powder with a powder charge of no more than 40,000 ?C/g; forming a dielectric on the anode by anodization at a formation voltage of no more than 100 V; and forming a conductive polymeric cathode on the dielectric wherein the capacitor has a breakdown voltage higher than the formation voltage.
    Type: Grant
    Filed: September 14, 2015
    Date of Patent: August 28, 2018
    Assignee: KEMET Electronics Corporation
    Inventors: Yuri Freeman, Steven C. Hussey, Jimmy Dale Cisson, Philip M. Lessner
  • Publication number: 20160079004
    Abstract: An improved capacitor and a method for forming an improved capacitor is detailed. The method comprises forming a tantalum anode from a tantalum powder with a powder charge of no more than 40,000 ?C/g; forming a dielectric on the anode by anodization at a formation voltage of no more than 100 V; and forming a conductive polymeric cathode on the dielectric wherein the capacitor has a breakdown voltage higher than the formation voltage.
    Type: Application
    Filed: September 14, 2015
    Publication date: March 17, 2016
    Inventors: Yuri Freeman, Steven C. Hussey, Jimmy Dale Cisson, Philip M. Lessner
  • Patent number: 9147530
    Abstract: A process for providing an improved hermetically sealed capacitor which includes the steps of applying a solder and a flux to an interior surface of a case; flowing the solder onto the interior surface; remove flux thereby forming a flux depleted solder; inserting the capacitive element into the casing; reflowing the flux depleted solder thereby forming a solder joint between the case and the solderable layer; and sealing the case.
    Type: Grant
    Filed: September 4, 2013
    Date of Patent: September 29, 2015
    Assignee: KEMET Electronics Corporation
    Inventors: Steven C. Hussey, Yuri Freeman, Philip M. Lessner, Qingping Chen, Javaid Qazi
  • Publication number: 20140061284
    Abstract: A process for providing an improved hermetically sealed capacitor which includes the steps of applying a solder and a flux to an interior surface of a case; flowing the solder onto the interior surface; remove flux thereby forming a flux depleted solder; inserting the capacitive element into the casing; reflowing the flux depleted solder thereby forming a solder joint between the case and the solderable layer; and sealing the case.
    Type: Application
    Filed: September 4, 2013
    Publication date: March 6, 2014
    Applicant: Kemet Electronics Corporation
    Inventors: Steven C. Hussey, Yuri Freeman, Philip M. Lessner, Qingping Chen, Javaid Qazi
  • Patent number: 8379371
    Abstract: A method for forming a hermetically sealed capacitor including: forming an anode; forming a dielectric on the anode; forming a conductive layer on the dielectric thereby forming a capacitive element; inserting the capacitive element into a casing; electrically connecting the anode to an exterior anode connection; electrically connecting the cathode to an exterior cathode connection; filling the casing with an atmosphere comprising a composition, based on 1 kg of atmosphere, of at least 175 g to no more than 245 g of oxygen, at least 7 g to no more than 11 g of water, at least 734 grams to no more than 818 grams of nitrogen and no more than 10 grams of a minor component; and hermetically sealing the casing with the atmosphere with the capacitive element contained in the casing.
    Type: Grant
    Filed: May 20, 2011
    Date of Patent: February 19, 2013
    Assignee: Kemet Electronics Corporation
    Inventors: Qingping Chen, Yuri Freeman, Steven C. Hussey
  • Patent number: 8349030
    Abstract: A process for the manufacturing valve metal anodes is provided. The process includes: providing a valve metal powder; pressing the valve metal powder to form a pellet; first deoxidizing the pellet with a first reducing agent to form a first oxide of reducing agent on the pellet; removing the first oxide of reducing agent from the pellet to form a deoxidized pellet; sintering the deoxidized pellet to form a sintered pellet; second deoxidizing the sintered pellet with a second reducing agent to form a second oxide of reducing agent on the sintered pellet; and removing said second oxide of reducing agent.
    Type: Grant
    Filed: September 21, 2011
    Date of Patent: January 8, 2013
    Assignee: Kemet Electronics Corporation
    Inventors: Steven C. Hussey, Yuri Freeman, Philip M. Lessner
  • Patent number: 8323361
    Abstract: A capacitor, and method of making a capacitor, is provided wherein the capacitor has exceptionally high break down voltage. The capacitor has a tantalum anode with an anode wire attached there to. A dielectric film is on the tantalum anode. A conductive polymer is on the dielectric film. An anode lead is in electrical contact with the anode wire. A cathode lead is in electrical contact with the conductive polymer and the capacitor has a break down voltage of at least 60 V.
    Type: Grant
    Filed: June 22, 2011
    Date of Patent: December 4, 2012
    Assignee: Kemet Electronics Corporation
    Inventors: Yuri Freeman, Jake Yongjian Qiu, Steven C. Hussey, Philip M. Lessner, Yongjian Qiu
  • Publication number: 20120293917
    Abstract: A method for forming a hermetically sealed capacitor including: forming an anode; forming a dielectric on the anode; forming a conductive layer on the dielectric thereby forming a capacitive element; inserting the capacitive element into a casing; electrically connecting the anode to an exterior anode connection; electrically connecting the cathode to an exterior cathode connection; filling the casing with an atmosphere comprising a composition, based on 1 kg of atmosphere, of at least 175 g to no more than 245 g of oxygen, at least 7 g to no more than 11 g of water, at least 734 grams to no more than 818 grams of nitrogen and no more than 10 grams of a minor component; and hermetically sealing the casing with the atmosphere with the capacitive element contained in the casing.
    Type: Application
    Filed: May 20, 2011
    Publication date: November 22, 2012
    Applicant: Kemet Electronics Corporation
    Inventors: Qingping Chen, Yurl Freeman, Steven C. Hussey
  • Patent number: 8308825
    Abstract: A method for treating anodes of refractory valve metals by deoxidizing the anodes using Mg in an oven, prior to sintering. The process limits free oxygen in the metal compact and improves performance of a capacitor, especially with regards to rated voltage.
    Type: Grant
    Filed: December 11, 2009
    Date of Patent: November 13, 2012
    Assignee: Kemet Electronics Corporation
    Inventors: Yuri Freeman, Philip M. Lessner, Jeffrey Poltorak, Steven C. Hussey
  • Patent number: 8310815
    Abstract: A capacitor, and method of making a capacitor, is provided wherein the capacitor has exceptionally high break down voltage. The capacitor has a tantalum anode with an anode wire attached there to. A dielectric film is on the tantalum anode. A conductive polymer is on the dielectric film. An anode lead is in electrical contact with the anode wire. A cathode lead is in electrical contact with the conductive polymer and the capacitor has a break down voltage of at least 60 V.
    Type: Grant
    Filed: April 20, 2009
    Date of Patent: November 13, 2012
    Assignee: Kemet Electronics Corporation
    Inventors: Yuri Freeman, Yongjian Qiu, Steven C. Hussey, Philip M. Lessner
  • Publication number: 20110252613
    Abstract: A capacitor, and method of making a capacitor, is provided wherein the capacitor has exceptionally high break down voltage. The capacitor has a tantalum anode with an anode wire attached there to. A dielectric film is on the tantalum anode. A conductive polymer is on the dielectric film. An anode lead is in electrical contact with the anode wire. A cathode lead is in electrical contact with the conductive polymer and the capacitor has a break down voltage of at least 60 V.
    Type: Application
    Filed: June 22, 2011
    Publication date: October 20, 2011
    Applicant: Kemet Electronics Corporation
    Inventors: Yuri Freeman, Jake Yongjian Qiu, Steven C. Hussey, Philip M. Lessner, Yongjian Qiu
  • Publication number: 20100265634
    Abstract: A capacitor, and method of making a capacitor, is provided wherein the capacitor has exceptionally high break down voltage. The capacitor has a tantalum anode with an anode wire attached there to. A dielectric film is on the tantalum anode. A conductive polymer is on the dielectric film. An anode lead is in electrical contact with the anode wire. A cathode lead is in electrical contact with the conductive polymer and the capacitor has a break down voltage of at least 60 V.
    Type: Application
    Filed: April 20, 2009
    Publication date: October 21, 2010
    Inventors: Yuri Freeman, Jake Yongjian Qiu, Steven C. Hussey, Philip M. Lessner
  • Publication number: 20100092326
    Abstract: A method for treating anodes of refractory valve metals by deoxidizing the anodes using Mg in an oven, prior to sintering. The process limits free oxygen in the metal compact and improves performance of a capacitor, especially with regards to rated voltage.
    Type: Application
    Filed: December 11, 2009
    Publication date: April 15, 2010
    Inventors: Yuri Freeman, Philip M. Lessner, Jeffrey Poltorak, Steven C. Hussey
  • Publication number: 20090279233
    Abstract: A method for treating anodes of refractory valve metals by deoxidizing the anodes using Mg in an oven, prior to sintering. The process limits free oxygen in the metal compact and improves performance of a capacitor, especially with regards to rated voltage.
    Type: Application
    Filed: May 12, 2008
    Publication date: November 12, 2009
    Inventors: Yuri Freeman, Philip M. Lessner, Jeffrey Poltorak, Steven C. Hussey
  • Patent number: RE47373
    Abstract: A method for forming a hermetically sealed capacitor including: forming an anode; forming a dielectric on the anode; forming a conductive layer on the dielectric thereby forming a capacitive element; inserting the capacitive element into a casing; electrically connecting the anode to an exterior anode connection; electrically connecting the cathode to an exterior cathode connection; filling the casing with an atmosphere comprising a composition, based on 1 kg of atmosphere, of at least 175 g to no more than 245 g of oxygen, at least 7 g to no more than 11 g of water, at least 734 grams to no more than 818 grams of nitrogen and no more than 10 grams of a minor component; and hermetically sealing the casing with the atmosphere with the capacitive element contained in the casing.
    Type: Grant
    Filed: January 30, 2015
    Date of Patent: April 30, 2019
    Assignee: KEMET Electronics Corporation
    Inventors: Qingping Chen, Yuri Freeman, Steven C. Hussey