Patents by Inventor Steven C. Lazar, Jr.

Steven C. Lazar, Jr. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • RFID power from handset transmissions
    Patent number: 7532120
    Abstract: A radio frequency identification (RFID) tag comprises a transceiver and a component coupled to the transceiver. The transceiver is adapted to wirelessly receive power from an RFID reader and/or from a mobile communication device. The power received from the mobile communication device is used to power the component, providing an alternative power source (cellular beacons) that uses no additional handset power.
    Type: Grant
    Filed: July 21, 2006
    Date of Patent: May 12, 2009
    Assignee: Texas Instruments Incorporated
    Inventors: Leonardo W. Estevez, Steven C. Lazar, Jr., Carl M. Panasik
  • Gallium arsenide power monolithic microwave integrated circuit
    Patent number: 4890069
    Abstract: A gallium arsenide monolithic microwave integrated circuit amplifier comprising a first stage having a common gate field effect transistor to provide matching of the input impedance, a second stage having a common source field effect transistor to provide class A gain, and a third stage having a common source open drain field effect transistor to provide class B gain for the amplifier. This monolithic integrated circuit amplifier provides a gain of greater than 25 decibels over a frequency band of 400 Hz-1.5 GHz.
    Type: Grant
    Filed: February 29, 1988
    Date of Patent: December 26, 1989
    Assignee: Motorola Inc.
    Inventors: Joseph M. Duffalo, Steven C. Lazar, Jr.
  • Dual-gate gallium arsenide power metal semiconductor field effect transistor
    Patent number: 4870478
    Abstract: A dual-gate gallium arsenide power MESFET chip comprising a source region surrounded by a first gate, a second surrounding the first gate, a drain region juxtaposed to said second gate, and a shorting bar which couples the second gate to the source region. This combination, used in a multi-fingered application, provides a reverse breakdown voltage substantially higher than prior art devices.
    Type: Grant
    Filed: April 21, 1988
    Date of Patent: September 26, 1989
    Assignee: Motorola, Inc.
    Inventors: Charles E. Weitzel, Lalgudi M. G. Sundaram, Steven C. Lazar, Jr.