Patents by Inventor Steven C. Moss

Steven C. Moss has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Refraction assisted illumination for imaging
    Patent number: 8450688
    Abstract: Various embodiments are directed to systems and methods for imaging subsurface features of a semiconductor object comprising a first region having a first doping property and a second region having a second doping property. The semiconductor object may comprise subsurface features and material between a surface of the semiconductor object and the subsurface features. The material may have an index of refraction that is greater than an index of refraction of a surrounding medium in contact with the surface of the semiconductor object. For example, a system may comprise an imaging device comprising an objective. The imaging device may be sensitive to a first wavelength. The system may also comprise an illumination source to emit illumination substantially at the first wavelength. The illumination may be directed towards the surface of the semiconductor object at a first angle relative to a normal of the surface. The first angle is greater than an acceptance angle of the objective of the imaging device.
    Type: Grant
    Filed: July 25, 2011
    Date of Patent: May 28, 2013
    Assignee: The Aerospace Corporation
    Inventors: Stephen La Lumondiere, Terence Yeoh, Martin Siu Wo Leung, Neil A. Ives, William T. Lotshaw, Steven C. Moss
  • REFRACTION ASSISTED ILLUMINATION FOR IMAGING
    Publication number: 20120019707
    Abstract: Various embodiments are directed to systems and methods for imaging subsurface features of a semiconductor object comprising a first region having a first doping property and a second region having a second doping property. The semiconductor object may comprise subsurface features and material between a surface of the semiconductor object and the subsurface features. The material may have an index of refraction that is greater than an index of refraction of a surrounding medium in contact with the surface of the semiconductor object. For example, a system may comprise an imaging device comprising an objective. The imaging device may be sensitive to a first wavelength. The system may also comprise an illumination source to emit illumination substantially at the first wavelength. The illumination may be directed towards the surface of the semiconductor object at a first angle relative to a normal of the surface. The first angle is greater than an acceptance angle of the objective of the imaging device.
    Type: Application
    Filed: July 25, 2011
    Publication date: January 26, 2012
    Applicant: The Aerospace Corporation
    Inventors: Stephen La Lumondiere, Terence Yeoh, Martin Siu Wo Leung, Neil A. Ives, William T. Lotshaw, Steven C. Moss