Abstract: A method for testing a semiconductor memory cell comprising first and second transistors in cross-coupled arrangement to form a bistable latch, the drains of the transistors respectively representing first and second nodes each for storing a high or low potential state, and each node being connected to a respective semiconductor arrangement for replacing charge leaked from the node and to a respective switching means, activatable by a word-line, for coupling the node to a respective bit-line, the method comprising the steps of: connecting the bit-lines to the low potential; activating the word-line to connect the first node to the first bit-line to allow any potential on the first node to fall towards the potential on the first bit-line; and monitoring charge flow from the first node to the first bit-line to test the operation of the first semiconductor arrangement.

Abstract: Circuitry for reading from and writing to memory cells of a group of memory cells. The circuitry comprises read circuitry and write circuitry each connectable to bit lines associated with respective ones of the memory cells. The read circuitry is arranged to read from the cells and the write circuitry is arranged to write to the cells. Wherein the read circuitry and write circuitry are configured so that more cells in the group can be simultaneously written to during a write operation than can be simultaneously read from during a read operation.