Abstract: A computing device includes a first set of non-volatile logic element arrays associated with a first function and a second set of non-volatile logic element arrays associated with a second function. The first and second sets of non-volatile logic element arrays are independently controllable. A first power domain supplies power to switched logic elements of the computing device, a second power domain supplies power to logic elements configured to control signals for storing data to or reading data from non-volatile logic element arrays, and a third power domain supplies power for the non-volatile logic element arrays. The different power domains are independently powered up or down based on a system state to reduce power lost to excess logic switching and the accompanying parasitic power consumption during the recovery of system state and to reduce power leakage to backup storage elements during regular operation of the computing device.

Abstract: Design and operation of a processing device is configurable to optimize wake-up time and peak power cost during restoration of a machine state from non-volatile storage. The processing device includes a plurality of non-volatile logic element arrays configured to store a machine state represented by a plurality of volatile storage elements of the processing device. A stored machine state is read out from the plurality of non-volatile logic element arrays to the plurality of volatile storage elements. During manufacturing, a number of rows and a number of bits per row in non-volatile logic element arrays are based on a target wake up time and a peak power cost. In another approach, writing data to or reading data of the plurality of non-volatile arrays can be done in parallel, sequentially, or in any combination to optimize operation characteristics.

Abstract: Ferroelectric capacitor structures for integrated decoupling capacitors and the like. The ferroelectric capacitor structure includes two or more ferroelectric capacitors connected in series with one another between voltage nodes. The series connection of the ferroelectric capacitors reduces the applied voltage across each, enabling the use of rough ferroelectric dielectric material, such as PZT deposited by MOCVD. Matched construction of the series-connected capacitors, as well as uniform polarity of the applied voltage across each, is beneficial in reducing the maximum voltage across any one of the capacitors, reducing the vulnerability to dielectric breakdown.

Abstract: A processing device is operated using a plurality of volatile storage elements. Data in the plurality of volatile storage elements is stored in a plurality of non-volatile logic element arrays. A primary logic circuit portion of individual ones of the plurality of volatile storage elements is powered by a first power domain, and a slave stage circuit portion of individual ones of the plurality of volatile storage elements is powered by a second power domain. During a write back of data from the plurality of non-volatile logic element arrays to the plurality of volatile storage elements, the first power domain is powered down and the second power domain is maintained. In a further approach, the plurality of non-volatile logic element arrays is powered by a third power domain, which is powered down during regular operation of the processing device.

Abstract: In an embodiment of the invention, a dual-port negative level sensitive reset data retention latch contains a clocked inverter and a dual-port latch. Data is clocked through the clocked inverter when clock signal CKT goes low, CLKZ goes high, reset control signal REN is high and retention control signal RET is low. The dual-port latch is configured to receive the output of the clocked inverter, a second data bit D2, the clock signals CKT and CLKZ, the retain control signal RET, the reset control signal REN and the control signals SS and SSN. The signals CKT, CLKZ, RET, REN, SS and SSN determine whether the output of the clocked inverter or the second data bit D2 is latched in the dual-port latch. Control signal RET determines when data is stored in the dual-port latch during retention mode.

Abstract: In an embodiment of the invention, a dual-port negative level sensitive data retention latch contains a clocked inverter and a dual-port latch. Data is clocked through the clocked inverter when clock signal CKT goes high, CLKZ goes low and retention control signal RET is low. The dual-port latch is configured to receive the output of the clocked inverter, a second data bit D2, the clock signals CKT and CLN, the retain control signals RET and the control signals SS and SSN. The signals CKT, CLKZ, RET, SS and SSN determine whether the output of the clocked inverter or the second data bit D2 is latched in the dual-port latch. Control signal RET determines when data is stored in the dual-port latch during retention mode.

Abstract: A processing device boots or wakes using non-volatile logic element (NVL) array(s) that store a machine state. A standard boot sequence is used to restore a first portion of data. A second portion of data is restored, in parallel with the standard boot sequence, from the NVL array(s). A data corruption check is performed on the second portion of data. If the second data is valid, a standard boot sequence is used to restore a third portion of data. If the second data is invalid or the boot is an initial boot, a standard boot sequence is executed to determine the second portion of data, which is then stored in the NVL array(s). The processing device restores the second portion of the data during a portion of the boot/wake process that is not reading data from other non-volatile devices to avoid overloading the respective power domain.

Abstract: In an embodiment of the invention, a dual-port negative level sensitive data retention latch contains a clocked inverter and a dual-port latch. Data is clocked through the clocked inverter when clock signal CKT goes high, CLKZ goes low and retention control signal RET is low. The dual-port latch is configured to receive the output of the clocked inverter, a second data bit D2, the clock signals CKT and CLN, the retain control signals RET and the control signals SS and SSN. The signals CKT, CLKZ, RET, SS and SSN determine whether the output of the clocked inverter or the second data bit D2 is latched in the dual-port latch. Control signal RET determines when data is stored in the dual-port latch during retention mode.

Abstract: In an embodiment of the invention, a dual-port negative level sensitive reset data retention latch contains a clocked inverter and a dual-port latch. Data is clocked through the clocked inverter when clock signal CKT goes low, CLKZ goes high, reset control signal REN is high and retention control signal RET is low. The dual-port latch is configured to receive the output of the clocked inverter, a second data bit D2, the clock signals CKT and CLKZ, the retain control signal RET, the reset control signal REN and the control signals SS and SSN. The signals CKT, CLKZ, RET, REN, SS and SSN determine whether the output of the clocked inverter or the second data bit D2 is latched in the dual-port latch. Control signal RET determines when data is stored in the dual-port latch during retention mode.

Abstract: A system on chip (SoC) provides a nonvolatile memory array that is configured as n rows by m columns of bit cells. Each of the bit cells is configured to store a bit of data. There are m bit lines each coupled to a corresponding one of the m columns of bit cells. There are m write drivers each coupled to a corresponding one of the m bit lines. An AND gate is coupled to the m bit lines and has an output line coupled to an input of a test controller on the SoC. An OR gate is coupled to the m bit lines and has an output line coupled to an input of the test controller.

Abstract: A system on chip (SoC) includes one or more core logic blocks that are configured to operate on a lower supply voltage and a memory array configured to operate on a higher supply voltage. Each bitcell in the memory has two ferroelectric capacitors connected in series between a first plate line and a second plate line to form a node Q. A data bit voltage is transferred to the node Q by activating a write driver to provide the data bit voltage responsive to the lower supply voltage. The data bit voltage is boosted on the node Q by activating a sense amp coupled to node Q of the selected bit cell, such that the sense amp senses the data bit voltage on the node Q and in response increases the data bit voltage on the node Q to the higher supply voltage.

Abstract: A system on chip (SoC) has a nonvolatile memory array of n rows by m columns coupled to one or more of the core logic blocks. M is constrained to be an odd number. Each time a row of m data bits is written, parity is calculated using the m data bits. Before storing the parity bit, it is inverted. Each time a row is read, parity is checked to determine if a parity error is present in the recovered data bits. A boot operation is performed on the SoC when a parity error is detected.

Abstract: A system on chip (SoC) provides a memory array of self referencing nonvolatile bitcells. Each bit cell includes two ferroelectric capacitors connected in series between a first plate line and a second plate line, such that a node Q is formed between the two ferroelectric capacitors. The first plate line and the second plate line are configured to provide a voltage approximately equal to first voltage while the bit cell is not being accessed. A clamping circuit coupled to the node Q. A first read capacitor is coupled to the bit line via a transfer device controlled by a first control signal. A second read capacitor coupled to the bit line via another transfer device controlled by a second control signal. A sense amp is coupled between the first read capacitor and the second read capacitor.

Abstract: A system on chip (SoC) provides a memory array of nonvolatile bitcells. Each bit cell includes two ferroelectric capacitors connected in series between a first plate line and a second plate line, such that a node Q is formed between the two ferroelectric capacitors. The first plate line and the second plate line are configured to provide a voltage approximately equal to first voltage while the bit cell is not being accessed. A clamping circuit is coupled to the node Q and is operable to clamp the node Q to a voltage approximately equal to first voltage while the bit cell is not being accessed.

Abstract: A system on chip (SoC) includes one or more core logic blocks that are configured to operate on a lower supply voltage and a memory array configured to operate on a higher supply voltage. Each bitcell in the memory has two ferroelectric capacitors connected in series between a first plate line and a second plate line to form a node Q. A data bit voltage is transferred to the node Q by activating a write driver to provide the data bit voltage responsive to the lower supply voltage. The data bit voltage is boosted on the node Q by activating a sense amp coupled to node Q of the selected bit cell, such that the sense amp senses the data bit voltage on the node Q and in response increases the data bit voltage on the node Q to the higher supply voltage.

Abstract: A system on chip (SoC) has a nonvolatile memory array of n rows by m columns coupled to one or more of the core logic blocks. M is constrained to be an odd number. Each time a row of m data bits is written, parity is calculated using the m data bits. Before storing the parity bit, it is inverted. Each time a row is read, parity is checked to determine if a parity error is present in the recovered data bits. A boot operation is performed on the SoC when a parity error is detected.

Abstract: A system on chip (SoC) provides a memory array of nonvolatile bitcells. Each bit cell includes two ferroelectric capacitors connected in series between a first plate line and a second plate line, such that a node Q is formed between the two ferroelectric capacitors. The first plate line and the second plate line are configured to provide a voltage approximately equal to first voltage while the bit cell is not being accessed. A clamping circuit is coupled to the node Q and is operable to clamp the node Q to a voltage approximately equal to first voltage while the bit cell is not being accessed.

Abstract: A system on chip (SoC) provides a nonvolatile memory array that is configured as n rows by m columns of bit cells. Each of the bit cells is configured to store a bit of data. There are m bit lines each coupled to a corresponding one of the m columns of bit cells. There are m write drivers each coupled to a corresponding one of the m bit lines, wherein the m drivers each comprise a write one circuit and a write zero circuit. The m drivers are operable to write all ones into a row of bit cells in response to a first control signal coupled to the write one circuits and to write all zeros into a row of bit cells in response to a second control signal coupled to the write zero circuits.

Abstract: A system on chip (SoC) provides a nonvolatile memory array that is configured as n rows by m columns of bit cells. Each of the bit cells is configured to store a bit of data. There are m bit lines each coupled to a corresponding one of the m columns of bit cells. There are m write drivers each coupled to a corresponding one of the m bit lines. An AND gate is coupled to the m bit lines and has an output line coupled to an input of a test controller on the SoC. An OR gate is coupled to the m bit lines and has an output line coupled to an input of the test controller.

Abstract: A system on chip (SoC) provides a memory array of self referencing nonvolatile bitcells. Each bit cell includes two ferroelectric capacitors connected in series between a first plate line and a second plate line, such that a node Q is formed between the two ferroelectric capacitors. The first plate line and the second plate line are configured to provide a voltage approximately equal to first voltage while the bit cell is not being accessed. A clamping circuit coupled to the node Q. A first read capacitor is coupled to the bit line via a transfer device controlled by a first control signal. A second read capacitor coupled to the bit line via another transfer device controlled by a second control signal. A sense amp is coupled between the first read capacitor and the second read capacitor.