Patents by Inventor Steven Crist

Steven Crist has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8636912
    Abstract: A method of forming a device is provided. A substrate having a component is provided and a sacrificial layer is formed over the component. The sacrificial layer includes a cavity portion disposed about the component and a tunnel portion adjacent to the cavity portion. In addition, an encapsulation layer having a cover portion and a perimeter portion is formed over the sacrificial layer. The cover portion encapsulates the cavity portion such that the cavity portion forms a cavity within the cover portion. The perimeter portion is disposed over the tunnel portion. Moreover, an access hole is formed in the perimeter portion of the encapsulation layer.
    Type: Grant
    Filed: February 20, 2012
    Date of Patent: January 28, 2014
    Assignee: RF Micro Devices, Inc.
    Inventors: Sangchae Kim, Steven Crist
  • Patent number: 8159056
    Abstract: A method of forming a device is provided. A substrate having a component is provided and a sacrificial layer is formed over the component. The sacrificial layer includes a cavity portion disposed about the component and a tunnel portion adjacent to the cavity portion. In addition, an encapsulation layer having a cover portion and a perimeter portion is formed over the sacrificial layer. The cover portion encapsulates the cavity portion such that the cavity portion forms a cavity within the cover portion. The perimeter portion is disposed over the tunnel portion. Moreover, an access hole is formed in the perimeter portion of the encapsulation layer.
    Type: Grant
    Filed: January 15, 2008
    Date of Patent: April 17, 2012
    Assignee: RF Micro Devices, Inc.
    Inventors: Sangchae Kim, Steven Crist
  • Publication number: 20060258038
    Abstract: A technique for manufacturing a piezoresistive sensing structure includes a number of process steps. Initially, a piezoresistive element is implanted into a first side of an assembly that includes a semiconductor material. A passivation layer is then formed on the first side of the assembly over the element. The passivation layer is then removed from selected areas on the first side of the assembly. A first mask is then provided on the passivation layer in a desired pattern. A beam, which includes the element, is then formed in the assembly over at least a portion of the assembly that is to provide a cavity. The passivation layer provides a second mask, in the formation of the beam, that determines a width of the formed beam.
    Type: Application
    Filed: May 12, 2005
    Publication date: November 16, 2006
    Inventors: David Rich, Steven Crist