Abstract: This disclosure provides an electroluminescent ("EL") display device having anode, cathode, insulator and organic EL layers. The anode and cathode layers sandwich the other two layers, and the insulator layer is patterned to selectively block flow of current through the EL layers, and thereby locally block generation of light. The patterned insulator layer allows a single panel to display multiple visual attributes, yet does not require electrode patterning. The patterned insulator can be fabricated using photoresist exposure and development procedures. The photoresist is laid on top of a commercially available substrate/electrode layered pair, and is developed to create an assembly that can be completed in a single vacuum deposition process.

Abstract: A high refractive index package material is described that encapsulates a semiconductor light emitting chip. The high refractive index package material is transparent to the light emitted from the chip and includes a host material and a plurality of nanoparticles held in the host material. The host material has a refractive index lower than that of the chip and is transparent to the light emitted from the chip. The nanoparticles are (1) formed from a material having a refractive index higher than that of the host material, (2) substantially smaller in size than the wavelength of the light emitted from the chip, (3) included in the host material at such a density that the effective refractive index of the high refractive index package material is higher than that of the host material without decreasing the transparency of the high refractive index package material.

Abstract: A method for processing coplanar semiconductor devices of different types as provided. The method includes the steps of: forming a first layer for formation of a first device region on a substrate, forming an epitaxial semiconductor lift-off layer above the first device region, removing a portion of the first device region to open areas for the formation of the second device region, depositing epitaxially a second device region, and removing the liftoff layer to leave the first and second device regions remaining on the substrate.