Abstract: Electronic devices such as transistors are disclosed. The electronic device includes an electrically conductive gate electrode, an anodized layer disposed on the gate electrode, a dielectric layer disposed on the anodized layer, and a semiconductor oxide layer that has a channel region. The channel region is disposed on the dielectric layer and has an internal resistance. The internal resistance of the channel can change when an electrical signal is applied to the gate electrode.

Abstract: Method of fabricating electronic devices is disclosed. The method includes the steps of forming an anodized layer that has a thickness greater than a desired thickness, and forming an electrically conductive layer on the anodized layer. The method further includes the steps of removing the conductive layer in a selected area to expose the anodized layer, and removing the exposed anodized layer until the anodized layer in the exposed area has the desired thickness.

Abstract: Methods and displays utilize row and column drivers with ZnO channels that control pixel transistors with ZnO channels, which in turn address OLEDs of an array to produce images of a display screen. A display backplane including the ZnO row and column drivers and the OLEDs may be constructed by utilizing aperture masking or a combination of photolithography and aperture masking. Monolithic integration of the ZnO row and column drivers together with the ZnO pixel transistors is thereby achieved.

Abstract: Logic circuitry is powered by a partially rectified alternating current (ac) waveform. The waveform is partially rectified in the sense that it does not provide a clean, primarily dc power signal. Instead, it is possible to power logic circuitry with a waveform that includes a substantial ac component. The partially rectified ac waveform may be applied to logic circuitry incorporating thin film transistors based on amorphous or polycrystalline organic semiconductors, inorganic semiconductors or combinations of both.

Abstract: Fabrication of silicon thin film transistors (TFT) on low-temperature plastic substrates using a reflective coating so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The TFT can be used in large area low cost electronics, such as flat panel displays and portable electronics such as video cameras, personal digital assistants, and cell phones.

Abstract: Logic circuitry is powered by a partially rectified alternating current (ac) waveform. The waveform is partially rectified in the sense that it does not provide a clean, primarily dc power signal. Instead, it is possible to power logic circuitry with a waveform that includes a substantial ac component. The partially rectified ac waveform may be applied to logic circuitry incorporating thin film transistors based on amorphous or polycrystalline organic semiconductors, inorganic semiconductors or combinations of both.

Abstract: The present invention provides a process for selectively thermally transferring insulators onto organic electroluminescent stacks or layers to electronically isolate adjacent devices upon deposition of electrode material. This can allow the formation of top electrodes for a plurality of organic electroluminescent devices on a substrate via one deposition step to form a single common top electrode or a plurality of electrodes patterned by shadowing due to the presence of the insulators.

Abstract: A method for making transistors comprises depositing source electrode and drain electrode features onto a substrate through a single aperture in a stationary shadow mask, said aperture having at least two opposing edges; wherein the shapes of the features are defined by the aperture and location of source materials in relation to the substrate.

Abstract: A method for making transistors comprises depositing source electrode and drain electrode features onto a substrate through a single aperture in a stationary shadow mask, said aperture having at least two opposing edges; wherein the shapes of the features are defined by the aperture and location of source materials in relation to the substrate.

Abstract: The present invention provides a process for selectively thermally transferring insulators onto organic electroluminescent stacks or layers to electronically isolate adjacent devices upon deposition of electrode material. This can allow the formation of top electrodes for a plurality of organic electroluminescent devices on a substrate via one deposition step to form a single common top electrode or a plurality of electrodes patterned by shadowing due to the presence of the insulators.

Abstract: Fabrication of silicon thin film transistors (TFT) on low-temperature plastic substrates using a reflective coating so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The TFT can be used in large area low cost electronics, such as flat panel displays and portable electronics such as video cameras, personal digital assistants, and cell phones.

Abstract: A method for making transistors comprises depositing source electrode and drain electrode features onto a substrate through a single aperture in a stationary shadow mask, said aperture having at least two opposing edges; wherein the shapes of the features are defined by the aperture and location of source materials in relation to the substrate.

Abstract: A method for making transistors comprises depositing source electrode and drain electrode features onto a substrate through a single aperture in a stationary shadow mask, said aperture having at least two opposing edges; wherein the shapes of the features are defined by the aperture and location of source materials in relation to the substrate.

Abstract: Fabrication of silicon thin film transistors (TFT) on low-temperature plastic substrates using a reflective coating so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The TFT can be used in large area low cost electronics, such as flat panel displays and portable electronics such as video cameras, personal digital assistants, and cell phones.

Abstract: Thick adherent dielectric films deposited on plastic substrates for use as a thermal barrier layer to protect the plastic substrates from high temperatures which, for example, occur during laser annealing of layers subsequently deposited on the dielectric films. It is desirable that the barrier layer has properties including: a thickness of 1 &mgr;m or greater, adheres to a plastic substrate, does not lift-off when cycled in temperature, has few or no cracks and does not crack when subjected to bending, resistant to lift-off when submersed in fluids, electrically insulating and preferably transparent. The thick barrier layer may be composed, for example, of a variety of dielectrics and certain metal oxides, and may be deposited on a variety of plastic substrates by various known deposition techniques. The key to the method of forming the thick barrier layer on the plastic substrate is maintaining the substrate cool during deposition of the barrier layer.