Abstract: A method is provided for blocking a portion of a longitudinal through-hole during manufacture of a semiconductor structure, comprising the steps of: forming a stack comprising a hard mask comprising at least one trench, and a first coating filling the at least one trench and coating the hard mask, wherein the first coating comprises one or more materials that can be etched selectively with respect to a second coating; etching at least one vertical via in the first coating directly above the portion of the trench in such a way as to remove the first coating over at least a fraction of the depth of the trench, filling the at least one via with the second coating material, and removing the first coating selectively with respect to the second coating from at least the one or more longitudinal through-holes in such a way as to leave in place any of the first coating present directly underneath the second coating.

Abstract: A method for producing a contact through the pre-metal dielectric (PMD) layer of an integrated circuit, between the front end of line and the back end of line, and the device produced thereby are disclosed. The PMD layer includes oxygen. In one aspect, the method includes producing a hole in the PMD, depositing a conductive barrier layer at the bottom of the hole, depositing a CuMn alloy on the bottom and side walls of the hole, filling the remaining portion of the hole with Cu. The method further includes performing an anneal process to form a barrier on the side walls of the hole, wherein the barrier has an oxide including Mn. The method further includes performing a CMP process.