Abstract: Described are techniques and equipment (apparatus) for processing an electrostatic chuck at controlled process conditions, including, as an example, for processing an electrostatic chuck during a step of curing an adhesive that forms a bond between two layers of the electrostatic chuck.

Abstract: Described are electrostatic chucks designed for use in supporting a workpiece during a workpiece processing step, the electrostatic chuck including a gas flow system.

Abstract: Described are electrostatic chucks that are useful to support a workpiece during a step of processing the workpiece, the electrostatic chuck including a pattern of charge dissipation lines on an insulating layer, the lines having a first conductive layer and a second conductive layer and being arranged to define enclosed fields of the insulating layer between the lines.

Abstract: An electrostatic chuck solves the problem of wafer sticking by providing conductive paths on raised embossments that are bridged together and are connected to ground that support the wafer substrate above the surface of the electrostatic chuck. Further, laterally spaced electrode patterns and electrode elements which are spaced laterally and longitudinally away from the raised embossments reduce or eliminate electrical coupling during wafer clamping between conductively coated embossments and the electrode elements, thereby creating a low resistance path for charges remaining on the wafer after declamping to promptly travel to ground. The conductive bridge and electrode pattern configuration also substantially reduces or eliminates any charge build up on the conductive bridge(s) during clamping in order that charge build up in “islands” (worn portions of the insulator layer of the main field area) do not affect the charge dissipation from the wafer substrate through the conductive bridges to ground.

Abstract: Described are electrostatic chuck devices that are useful to support a workpiece while processing the workpiece, upper ceramic layer components of electrostatic chuck assemblies, the upper ceramic layer having a deposited dielectric layer, a relatively smooth finish, or both, and related methods.

Abstract: Described are electrostatic chucks that are useful to support a workpiece during a step of processing the workpiece, the electrostatic chuck including embossments that are made of multiple deposited layers, the layers including diamond-like carbon layers and layers that contain silicon-based materials such as silicon carbide layers.

Abstract: Described are techniques and equipment (apparatus) for processing an electrostatic chuck at controlled process conditions, including, as an example, for processing an electrostatic chuck during a step of curing an adhesive that forms a bond between two layers of the electrostatic chuck.

Abstract: Described are multi-layer electrostatic chucks used to secure and support a wafer substrate during wafer processing, and related methods, wherein the chuck includes a grounding structure that includes a grounding layer and a grounding pin.

Abstract: Described are electrostatic chucks that are useful to support a workpiece during a step of processing the workpiece, the electrostatic chuck including embossments that are made of multiple deposited layers, the layers including diamond-like carbon layers and layers that contain silicon-based materials such as silicon carbide layers.

Abstract: Described are electrostatic chucks designed for use in supporting a workpiece during a workpiece processing step, the electrostatic chuck including a gas flow system.

Abstract: Described are multi-layer electrostatic chucks used to secure and support a wafer substrate during wafer processing, and related methods, wherein the chuck includes a grounding structure that includes a grounding layer and a grounding pin.

Abstract: An electrostatic chuck solves the problem of wafer sticking by providing conductive paths on raised embossments that are bridged together and are connected to ground that support the wafer substrate above the surface of the electrostatic chuck. Further, laterally spaced electrode patterns and electrode elements which are spaced laterally and longitudinally away from the raised embossments reduce or eliminate electrical coupling during wafer clamping between conductively coated embossments and the electrode elements, thereby creating a low resistance path for charges remaining on the wafer after declamping to promptly travel to ground. The conductive bridge and electrode pattern configuration also substantially reduces or eliminates any charge build up on the conductive bridge(s) during clamping in order that charge build up in “islands” (worn portions of the insulator layer of the main field area) do not affect the charge dissipation from the wafer substrate through the conductive bridges to ground.

Abstract: In accordance with an embodiment of the invention, there is provided an electrostatic chuck comprising a conductive path covering at least a portion of a workpiece-contacting surface of a gas seal ring of the electrostatic chuck, the conductive path comprising at least a portion of an electrical path to ground; and a main field area of a workpiece-contacting surface of the electrostatic chuck comprising a surface resistivity in the range of from about 108 to about 1012 ohms per square.

Abstract: In accordance with an embodiment of the invention, there is provided an electrostatic chuck. The electrostatic chuck comprises a surface layer activated by a voltage in an electrode to form an electric charge to electrostatically clamp a substrate to the electrostatic chuck. The surface layer includes a plurality of polymer protrusions and a charge control layer to which the plurality of polymer protrusions adhere, the plurality of polymer protrusions extending to a height above portions of the charge control layer surrounding the plurality of polymer protrusions to support the substrate upon the plurality of polymer protrusions during electrostatic clamping of the substrate.

Abstract: In accordance with an embodiment of the invention, there is provided an electrostatic chuck comprising a conductive path covering at least a portion of a workpiece-contacting surface of a gas seal ring of the electrostatic chuck, the conductive path comprising at least a portion of an electrical path to ground; and a main field area of a workpiece-contacting surface of the electrostatic chuck comprising a surface resistivity in the range of from about 108 to about 1012 ohms per square.

Abstract: In accordance with an embodiment of the invention, there is provided a coated graphite article. The article comprises graphite; and a conductive coating overlaying at least a portion of the graphite. The conductive coating comprises a through-thickness resistance of less than about 50 ohms as measured through the thickness of the graphite and the conductive coating. In accordance with another embodiment of the invention, there is provided a method for manufacturing a graphite article comprising a conductive coating. The method comprises treating graphite of the article with a reactive ion etch process; and after treating the graphite with the reactive ion etch process, applying the conductive coating over at least a portion of the graphite. In a further embodiment according to the invention, there is provided a method for refurbishing a graphite article comprising graphite and an overlaying conductive coating.

Abstract: In accordance with an embodiment of the invention, there is provided an electrostatic chuck. The electrostatic chuck comprises a surface layer activated by a voltage in an electrode to form an electric charge to electrostatically clamp a substrate to the electrostatic chuck. The surface layer includes a plurality of polymer protrusions and a charge control layer to which the plurality of polymer protrusions adhere, the plurality of polymer protrusions extending to a height above portions of the charge control layer surrounding the plurality of polymer protrusions to support the substrate upon the plurality of polymer protrusions during electrostatic clamping of the substrate.