Abstract: Embodiments of the present disclosure relate to a plasma screen used in a plasma processing chamber with improved flow conductance and uniformity. One embodiment provides a plasma screen. The plasma screen includes a circular plate having a center opening and an outer diameter. A plurality of cut outs formed through the circular plate. The plurality of cut outs are arranged in two or more concentric circles. Each concentric circle includes equal number of cut outs.

Abstract: Embodiments disclosed herein generally relate to a pumping system for a plasma processing apparatus. The pumping system includes a first pump path, a second pump path, a first valve, and a second valve. The first pump path couples an opening of a substrate support assembly of the processing chamber to an exhaust port of the processing chamber. The second pump path couples the opening of the substrate support assembly to an evacuation region of the processing chamber. The first valve is positioned in the first pump path. The first valve is configurable between a first state and a second state. The second valve is positioned in the second pump path. The second valve is configurable between the first state and the second state.

Abstract: A substrate carrier is described with an array of independently controllable heater elements. In one example an apparatus includes a substrate carrier to carry a substrate for processing, a plurality of resistive heating elements in the carrier to heat the substrate by heating the carrier, a power supply to supply power to the heating elements, a power controller to provide a control signal, the control signal to control an amount of current applied to each of the heating elements, and a plurality of power interfaces in the carrier each coupled to a heating element to receive the power from the power supply and the control signal from the controller and to modulate the power applied to a respective coupled heating element in response to the control signal.

Abstract: Precision screen printing is described that is capable of sub-micron uniformity of the metallization materials that are printed on green sheet ceramic. In some examples, puck is formed with electrical traces by screen printing a paste that contains metal on a ceramic green sheet in a pattern of electrical traces and processing the printed green sheet to form a puck of a workpiece carrier. In some example, the printing includes applying a squeegee of a screen printer to the printed green sheet in a squeegeeing direction while the green sheet is on a printer bed of the screen printer. The method further includes mapping the printer bed at multiple locations along the squeegeeing direction, identifying non-uniformities in the printer bed mapping, and modifying a printer controller of the screen printer to compensate for mapped non-uniformities in the printer bed.

Abstract: Embodiments disclosed herein relate to a substrate processing chamber component assembly with plasma resistant seal. In one embodiment, the semiconductor processing chamber component assembly includes a first semiconductor processing chamber component, a second semiconductor processing component, and a sealing member. The sealing member has a body formed substantially from polytetrafluoroethylene (PTFE). The sealing member provides a seal between the first and second semiconductor processing chamber components. The body includes a first surface, a second surface, a first sealing surface, and a second sealing surface. The first surface is configured for exposure to a plasma processing region. The second surface is opposite the first surface. The first sealing surface and the second sealing surface extend between the first surface and the second surface. The first sealing surface contacts the first semiconductor processing chamber component.

Abstract: Apparatuses including a height-adjustable edge ring, and methods for use thereof are described herein. In one example, a substrate support assembly includes a height-adjustable edge ring, and the substrate support assembly is located within a process chamber. The substrate support assembly includes an electrostatic chuck, an edge ring positioned on a portion of the electrostatic chuck, and one or more actuators to adjust the height of the edge ring via one or more push pins. The height-adjustable edge ring can be used to compensate for erosion of the edge ring over time. In addition, the height-adjustable edge ring can be removed from the process chamber via a slit valve opening without venting and opening the process chamber. The height-adjustable edge ring can be tilted by the one or more actuators in order to improve azimuthal uniformity at the edge of the substrate.

Abstract: Implementations described herein provide a method for processing a substrate on a substrate support assembly which enables both lateral and azimuthal tuning of the heat transfer between an electrostatic chuck and a substrate. The method includes processing a first substrate using a first temperature profile on the ESC having primary heaters and spatially tunable heaters. A deviation profile is determined from a result of processing the first substrate from a target result profile. The first temperature profile is adjusted to a second temperature profile on the ESC based on the deviation profile. Adjusting to the second temperature profile includes incrementing the power to one or more spatially tunable heaters in one or more discrete locations corresponding to the deviations profile. A second substrate is then processed on the ESC using the second temperature profile.

Abstract: Implementations described herein provide a substrate support assembly which enables both lateral and azimuthal tuning of the heat transfer between an electrostatic chuck and a heating assembly. The substrate support assembly comprises a body having a substrate support surface and a lower surface, one or more main resistive heaters disposed in the body, a plurality of spatially tunable heaters disposed in the body, and a spatially tunable heater controller coupled to the plurality of spatially tunable heaters, the spatially tunable heater controller configured to independently control an output one of the plurality of spatially tunable heaters relative to another of the plurality of spatially tunable heaters.

Abstract: Implementations described herein provide a substrate support assembly which enables both lateral and azimuthal tuning of the heat transfer between an electrostatic chuck and a heating assembly. The substrate support assembly comprises a body having a substrate support surface and a lower surface, one or more main resistive heaters disposed in the body, a plurality of spatially tunable heaters disposed in the body, and a spatially tunable heater controller coupled to the plurality of spatially tunable heaters, the spatially tunable heater controller configured to independently control an output one of the plurality of spatially tunable heaters relative to another of the plurality of spatially tunable heaters.

Abstract: Implementations described herein provide a substrate support assembly which enables both lateral and azimuthal tuning of the heat transfer between an electrostatic chuck and a heating assembly. The substrate support assembly comprises a body having a substrate support surface and a lower surface, one or more main resistive heaters disposed in the body, a plurality of spatially tunable heaters disposed in the body, and a spatially tunable heater controller coupled to the plurality of spatially tunable heaters, the spatially tunable heater controller configured to independently control an output one of the plurality of spatially tunable heaters relative to another of the plurality of spatially tunable heaters.

Abstract: The invention is embodied in a plasma flow device or reactor having a housing that contains conductive electrodes with openings to allow gas to flow through or around them, where one or more of the electrodes are powered by an RF source and one or more are grounded, and a substrate or work piece is placed in the gas flow downstream of the electrodes, such that said substrate or work piece is substantially uniformly contacted across a large surface area with the reactive gases emanating therefrom.

Abstract: The invention is embodied in a plasma flow device or reactor having a housing that contains conductive electrodes with openings to allow gas to flow through or around them, where one or more of the electrodes are powered by an RF source and one or more are grounded, and a substrate or work piece is placed in the gas flow downstream of the electrodes, such that said substrate or work piece is substantially uniformly contacted across a large surface area with the reactive gases emanating therefrom The invention is also embodied in a plasma flow device or reactor having a housing that contains conductive electrodes with openings to allow gas to flow through or around them, where one or more of the electrodes are powered by an RF source and one or more are grounded, and one of the grounded electrodes contains a means of mixing in other chemical precursors to combine with the plasma stream, and a substrate or work piece placed in the gas flow downstream of the electrodes, such that said substrate or work piece is

Abstract: The invention is embodied in a plasma flow device or reactor having a housing that contains conductive electrodes with openings to allow gas to flow through or around them, where one or more of the electrodes are powered by an RF source and one or more are grounded, and a substrate or work piece is placed in the gas flow downstream of the electrodes, such that said substrate or work piece is substantially uniformly contacted across a large surface area with the reactive gases emanating therefrom.