Patents by Inventor Steven Evers

Steven Evers has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230079095
    Abstract: A system for moving an object against a working surface of a finishing machine. A mounting platform is provided that is supported by a stationary frame. The mounting platform can only move reciprocally relative to the stationary frame along a linear line of motion. An articulating arm is mounted on the mounting platform and moves with the mounting platform. A linear actuator is provided having a first end coupled to the mounting platform and an opposite end mounted to the stationary frame. The linear actuator has a midline that is parallel to, and aligned with, the linear line of motion. A finishing machine is provided that has a working surface. The articulating arm touches objects to the working surface at a point of contact that is coplanar with the linear line of motion. This directs forces along the linear line of motion and into the linear actuator.
    Type: Application
    Filed: September 9, 2022
    Publication date: March 16, 2023
    Inventor: Steven Evers
  • Patent number: 11312015
    Abstract: A system and method for moving an object against a working surface of a finishing machine that is set in a fixed position. The object is moved in a precise movement pattern while following a precise contact pressure pattern. The object is moved against the working surface of the finishing machine using a robot with an articulating arm. Other movement is provided by a dynamic platform upon which the robot rests. The dynamic platform includes a linear slide that enables the robot to reciprocally move. The dynamic platform also includes an active contact flange that acts upon the linear slide. The active contact flange is programmable and imparts the contact pressure pattern to the object through the linear slide and the robot. A rotary table can also be provided that selectively rotates the robot, the linear slide and the active contact flange.
    Type: Grant
    Filed: September 9, 2019
    Date of Patent: April 26, 2022
    Assignee: Reliabotics LLC
    Inventors: Steven Evers, Frank Thissen, Chris Robinson
  • Publication number: 20200078940
    Abstract: A system and method for moving an object against a working surface of a finishing machine that is set in a fixed position. The object is moved in a precise movement pattern while following a precise contact pressure pattern. The object is moved against the working surface of the finishing machine using a robot with an articulating arm. Other movement is provided by a dynamic platform upon which the robot rests. The dynamic platform includes a linear slide that enables the robot to reciprocally move. The dynamic platform also includes an active contact flange that acts upon the linear slide. The active contact flange is programmable and imparts the contact pressure pattern to the object through the linear slide and the robot. A rotary table can also be provided that selectively rotates the robot, the linear slide and the active contact flange.
    Type: Application
    Filed: September 9, 2019
    Publication date: March 12, 2020
    Inventors: Steven Evers, Frank Thissen, Chris Robinson
  • Patent number: 7638413
    Abstract: A method of fabricating a semiconductor uses chemical vapor deposition, or plasma-enhanced chemical vapor deposition, to deposit an amorphous silicon film on an exposed surface of a substrate, such as ASIC wafer. The amorphous silicon film is doped with nitrogen to reduce the conductivity of the film and/or to augment the breakdown voltage of the film. Nitrogen gas, N2, is activated or ionized in a reactor before it is deposited on the substrate.
    Type: Grant
    Filed: April 4, 2005
    Date of Patent: December 29, 2009
    Assignee: Pan Jit Americas, Inc.
    Inventors: Michael Kountz, George Engle, Steven Evers
  • Publication number: 20050233553
    Abstract: A method of fabricating a semiconductor uses chemical vapor deposition, or plasma-enhanced chemical vapor deposition, to deposit an amorphous silicon film on an exposed surface of a substrate, such as ASIC wafer. The amorphous silicon film is doped with nitrogen to reduce the conductivity of the film and/or to augment the breakdown voltage of the film. Nitrogen gas, N2, is activated or ionized in a reactor before it is deposited on the substrate.
    Type: Application
    Filed: April 4, 2005
    Publication date: October 20, 2005
    Inventors: Michael Kountz, George Engle, Steven Evers