Abstract: Systems and methods are provided that may be implemented to identify and track layer changes of an integrated circuit (IC) device, e.g., during any one of circuit design, pattern generation, device fabrication and/or chip failure analysis processes. Multiple revisions and variants of different IC layers may be identified and tracked using a tracking system and standardized labeling scheme that employs a combination of identifier characters and identifier structures that may be further implemented using revision layer identification parameterized cells (layerID PCells and BooleanID PCells) that include such identifier characters and/or structures The disclosed tracking systems may be further implemented in an automated manner and/or in a manner that allows programming of various parts/aspects and layerID PCells and BooleanID PCells of the tracking system.

Abstract: Systems and methods are provided that may be implemented to identify and track layer changes of an integrated circuit (IC) device, e.g., during any one of circuit design, pattern generation, device fabrication and/or chip failure analysis processes. Multiple revisions and variants of different IC layers may be identified and tracked using a tracking system and standardized labeling scheme that employs a combination of identifier characters and identifier structures that may be further implemented using revision layer identification parameterized cells (layerID PCells and BooleanID PCells) that include such identifier characters and/or structures The disclosed tracking systems may be further implemented in an automated manner and/or in a manner that allows programming of various parts/aspects and layerID PCells and BooleanID PCells of the tracking system.

Abstract: A silicide-interface polysilicon resistor is disclosed. The silicide-interface polysilicon resistor includes a substrate, an oxide layer located on top of the substrate, and a polysilicon layer located on top of the oxide layer. The polysilicon layer includes multiple semiconductor junctions. The silicide-interface polysilicon resistor also includes a layer of silicide sheets, and at least one of the silicon sheets is in contact with one of the semiconductor junctions located within the polysilicon layer.

Abstract: A method comprises loading a tooling module onto a module carrier unit, inserting the module carrier unit into a molding press so that the carrier unit rests on a supporting member of an injection molding press, and closing the molding press until the tooling module is mated to an ejection side of a mold base.

Abstract: A method comprises loading a tooling module onto a module carrier unit, inserting the module carrier unit into a molding press so that the carrier unit rests on a supporting member of an injection molding press, and closing the molding press until the tooling module is mated to an ejection side of a mold base.

Abstract: A silicide-interface polysilicon resistor is disclosed. The silicide-interface polysilicon resistor includes a substrate, an oxide layer located on top of the substrate, and a polysilicon layer located on top of the oxide layer. The polysilicon layer includes multiple semiconductor junctions. The silicide-interface polysilicon resistor also includes a layer of silicide sheets, and at least one of the silicon sheets is in contact with one of the semiconductor junctions located within the polysilicon layer.

Abstract: An output driver having electrostatic discharge (ESD) protection is disclosed. The output driver includes a first gain transistor, a second gain transistor, a capacitor and a resistor. The first gain transistor provides a first stage gain, and the second gain transistor provides a second stage gain. The capacitor, which is connected to the first and second gain transistors, provides a compensation function between the first and second gain transistors during normal operations. In response to an occurrence of an ESD event at the output of the output driver, the capacitor turns on the second gain transistor The resistor, which is also connected to the first and second gain transistors, returns the second gain transistor to normal operations after the occurrence of an ESD event.