Abstract: A method of processing a semiconductor workpiece. The method includes flowing a process gas to a semiconductor workpiece through a first plurality of orifices positioned in a gas distribution faceplate. The method also includes removing gas from over the semiconductor workpiece through a chamber exhaust port and a second plurality of orifices positioned in the gas distribution faceplate.

Abstract: A method of processing a semiconductor workpiece. The method includes flowing a process gas to a semiconductor workpiece through a first plurality of orifices positioned in a gas distribution faceplate. The method also includes removing gas from over the semiconductor workpiece through a chamber exhaust port and a second plurality of orifices positioned in the gas distribution faceplate.

Abstract: Techniques of the present invention are directed to distribution of deposition gases onto a substrate. In one embodiment, a gas distributor for use in a processing chamber is provided. The gas distributor includes a body having a gas deflecting surface and a gas distributor face. The gas deflecting surface defines a cleaning gas pathway. The gas distributor face is disposed on an opposite side of the body from the gas deflecting surface and faces toward a substrate support member. The gas distributor face includes a raised step and at least one set of apertures through the raised step. The at least one set of apertures are adapted to distribute a deposition gas over a substrate positioned on the substrate support member.

Abstract: Embodiments of the present invention are directed to reducing clogging of nozzles and to reducing flow variance through the nozzles in a semiconductor processing chamber. In one embodiment, a method of introducing a gas into a semiconductor processing chamber comprises providing a nozzle having a proximal portion connected to a chamber wall or a gas distribution ring of the semiconductor processing chamber and a distal portion oriented inwardly away from the chamber wall into an interior of the semiconductor processing chamber. The nozzle includes a proximal end coupled with a gas supply. The nozzle includes a nozzle opening at a distal end. The nozzle includes a nozzle passage extending from the proximal end to the distal end.

Abstract: Embodiments in accordance with the present invention relate to systems and methods for distributing process gases over the surface of a workpiece. In accordance with one embodiment of the present invention, process gases are flowed from a source to a workpiece surface through a gas distribution showerhead defining a plurality of orifices. The gas distribution showerhead also features a plurality of exhaust orifices for removing material above the wafer surface. The supplemental exhaust afforded by the showerhead exhaust orifices serves to reduce variations in gas velocity attributable to radial flow across the wafer surface, thereby enhancing the uniformity between resulting processing at the wafer edge and center. The ratio of the distribution and exhaust aperture areas may vary or remain constant across the faceplate. Additionally, the size and number of distribution and exhaust apertures may be selected to optimize gas distribution across the semiconductor wafer surface.

Abstract: A gas distribution showerhead for use in a semiconductor fabrication process features a face plate having gas outlet ports in the form of elongated slots or channels. The use of elongated gas outlet ports in accordance with embodiments of the present invention substantially reduces the incidence of undesirable spotting and streaking of deposited material where the showerhead is closely spaced from the wafer. A showerhead featuring a face plate having a tapered profile to reduce edge thickness of deposited material at close face plate-to-wafer spacings is also disclosed.

Abstract: A gas distribution showerhead is designed to allow deposition of uniformly thick films over a wide range of showerhead-to-wafer spacings. In accordance with one embodiment of the present invention, the number, width, and/or depth of orifices inlet to the faceplate are reduced in order to increase flow resistance and thereby elevate pressure upstream of the faceplate. This elevated upstream gas flow pressure in turn reduces variation in the velocity of gas flowed through center portions of the showerhead relative to edge portions, thereby ensuring uniformity in thickness of film deposited on the edge or center portions of the wafer.

Abstract: Embodiments of the invention generally provide an apparatus for removing particles from a substrate surface, wherein the apparatus includes a substrate support member configured to support a substrate thereon, and a broadband actuator in mechanical communication with the substrate support member. Additionally, an air knife assembly may be positioned proximate a perimeter of the substrate surface, and is configured to deliver a laminar stream of air across the substrate surface in order to remove the dislodged contamination particles therefrom. Alternatively, a plasma source may be used to remove dislodged particles from the area proximate the substrate surface.

Abstract: The present invention is directed to achieving a desired process uniformity of processing a substrate which is heated by a heater. In specific embodiments, the method comprises establishing a correlation between a uniformity parameter of the process to be performed on the substrate and a spacing which is disposed between the substrate and a heater surface of the heater facing the substrate. The method further comprises determining a surface profile of the heater surface of the heater facing the substrate, based on the correlation between the uniformity parameter of the process to be performed on the substrate and the spacing between the substrate and the heater surface of the heater, to achieve a preset process uniformity of the uniformity parameter.

Abstract: A gas distribution showerhead for use in a semiconductor fabrication process features a face plate having gas outlet ports in the form of elongated slots or channels. The use of elongated gas outlet ports in accordance with embodiments of the present invention substantially reduces the incidence of undesirable spotting and streaking of deposited material where the showerhead is closely spaced from the wafer. A showerhead featuring a face plate having a tapered profile to reduce edge thickness of deposited material at close face plate-to-wafer spacings is also disclosed.

Abstract: Embodiments of the invention generally provide an apparatus for removing particles from a substrate surface, wherein the apparatus includes a substrate support member configured to support a substrate thereon, and a broadband actuator in mechanical communication with the substrate support member. Additionally, an air knife assembly may be positioned proximate a perimeter of the substrate surface, and is configured to deliver a laminar stream of air across the substrate surface in order to remove the dislodged contamination particles therefrom. Alternatively, a plasma source may be used to remove dislodged particles from the area proximate the substrate surface.

Abstract: Embodiments of the present invention generally provide a chuck for a semiconductor processing system, wherein the chuck includes an annular substrate receiving member having an upper substrate receiving surface formed thereon, a hemispherical reinforcement member affixed to a lower surface of the substrate receiving member, and an elongated stem portion affixed at a distal end to the hemispherical reinforcement member.