Abstract: A single-mode grating-outcoupled surface emitting (GSE) semiconductor laser architecture is provided. This architecture enables high speed modulation of the GSE laser, which is accomplished by only varying the relative phase of counter propagating waves in the outcoupler grating region of the lasing cavity.

Abstract: An improved grating-outcoupled surface-emitting semiconductor laser architecture is provided. A second-order grating is placed between two distributed Bragg reflector gratings. The period of the second order grating is positively or negatively detuned from the distributed Bragg reflector selected optical wavelength at which the laser operates. Detuning of the second-order grating towards shorter or longer wavelengths allows kink-free, linear LI curves light output versus forward current) for grating-outcoupled surface-emitting lasers. Due to the detuning of the outcoupler grating, the outcoupled radiation emits two beams that deviate slightly from the normal axis. A design point may then be chosen where the power outcoupled by symmetric and antisymmetric modes cross and where the outcoupled power is independent of the phase variation.

Abstract: A laser diode system is provided. The laser comprises first and second reflective gratings at each end of the laser. The laser further comprises an outcoupling grating between the first and second reflective gratings, wherein the outcoupling grating couples light out of the laser. The reflectors and outcoupling grating each have a unique wide-band reflective spectrum. A first laser cavity exists between the first and second reflective gratings. A second laser cavity exists between the first reflective grating and the outcoupling grating. A third laser cavity exists between the second reflective grating and the outcoupling grating, and a fourth laser cavity exists with in the outcoupling region. The overlap of reflective spectra determine the lasing wavelengths that reach resonance within each cavity. Wavelengths resonant in one cavity are suppressed in the others unless a wavelength is resonant in all cavities. This matching of mode intensities causes the outcoupled beam to be confined to a single wavelength.

Abstract: A laser source is provided by the present invention, comprising a laser diode and has an active region with asymmetric distributed Bragg reflectors (DBRs) at either end to reflect light within the cavity, and an outcoupling grating in the center of the device, which couples light out of the cavity. One DBR is long and shallow, with a narrow-band reflective spectrum. The other DBR is short and deep, with a wide-band reflective spectrum. The lasing wavelength is determined by the reflective spectrum overlap of the two DBRs. Since the shallow DBR is highly reflective to only one Fabry Perot wavelength, and the deep DBR is highly reflective to a wide band of Fabry-Perot wavelengths, it is the reflective spectrum of the shallow DBR that determines the lasing wavelength.

Abstract: A laser diode system is provided. The laser comprises first and second reflective gratings at each end of the laser. The laser further comprises an outcoupling grating between the first and second reflective gratings, wherein the outcoupling grating couples light out of the laser. The reflectors and outcoupling grating each have a unique wide-band reflective spectrum. A first laser cavity exists between the first and second reflective gratings. A second laser cavity exists between the first reflective grating and the outcoupling grating. A third laser cavity exists between the second reflective grating and the outcoupling grating, and a fourth laser cavity exists with in the outcoupling region. The overlap of reflective spectra determine the lasing wavelengths that reach resonance within each cavity. Wavelengths resonant in one cavity are suppressed in the others unless a wavelength is resonant in all cavities. This matching of mode intensities causes the outcoupled beam to be confined to a single wavelength.

Abstract: A laser source is provided by the present invention, comprising a laser diode and has an active region with asymmetric distributed Bragg reflectors (DBRs) at either end to reflect light within the cavity, and an outcoupling grating in the center of the device, which couples light out of the cavity. One DBR is long and shallow, with a narrow-band reflective spectrum. The other DBR is short and deep, with a wide-band reflective spectrum. The lasing wavelength is determined by the reflective spectrum overlap of the two DBRs. Since the shallow DBR is highly reflective to only one Fabry Perot wavelength, and the deep DBR is highly reflective to a wide band of Fabry-Perot wavelengths, it is the reflective spectrum of the shallow DBR that determines the lasing wavelength.