Abstract: A sputtering apparatus is provided with a cathode assembly formed of a cathode unit having a moveable magnet assembly and a cooling water source therein, and a removable target assembly that includes a replaceable target unit and a removable and preferably reusable cooling jacket that seals to the rear face of the target unit and encloses a cooling cavity therebetween. Ducts are configured to automatically disconnect and reconnect the cooling cavity to the water source when the target assembly is removed from and reconnected in the cathode assembly. The target unit includes a volume of sputtering material on which is a front sputtering face, and has a recessed rim surrounding the sputtering face. The rim is configured to form a vacuum seal to the wall of a sputtering chamber and a water seal to the cooling jacket. Thereby, the magnet assembly is isolated from contact with the cooling liquid.

Abstract: Thickness uniformity of films sputtered from a target onto a series of substrates is maintained as the target surface shape changes due to the consumption of the target. The eroded condition of the target is sensed by directly measuring the position of a point on the target surface, by measuring power consumption of the target, by measuring deposition from the surface of the target or by some other means. A controller responds to the measurement by moving a substrate holder to determine an amount to change the distance between the substrate and the target, usually by moving the substrate closer to the target, by an amount necessary to maintain uniformity of the coatings on the wafers being processed. A servo or stepper motor responds to a signal from the controller to move the substrate holder in accordance with the determined amount of distance change required. The adjustment is made following the coating of wafers at various times over the life of the target.

Abstract: A sputtering system for depositing a thin film onto a substrate is disclosed wherein the system includes an evacuatable chamber which includes the substrate. In particular, the system includes a target positioned within the chamber, wherein the target has a back surface and a sputtering surface. Further, the system includes plasma for eroding the target to provide material for forming the thin film wherein erosion of the target occurs in a predetermined erosion pattern and is controlled by a shape of the plasma. The system also includes a support for supporting the substrate opposite the sputtering surface. A magnet arrangement is provided which provides a magnetic field on the target for controlling the shape of the plasma, wherein the magnet arrangement is positioned adjacent the back surface. The magnet arrangement includes a plurality of magnet segments which may be moved into desired positions so as to change the shape of the magnet arrangement.

Abstract: Thickness uniformity of films sputtered from a target onto a series of substrates is maintained as the target surface shape changes due to the consumption of the target. The eroded condition of the target is sensed by directly measuring the position of a point on the target surface, by measuring power consumption of the target, by measuring deposition from the surface of the target or by some other means. A controller responds to the measurement by moving a substrate holder to determine an amount to change the distance between the substrate and the target, usually by moving the substrate closer to the target, by an amount necessary to maintain uniformity of the coatings on the wafers being processed. A servo or stepper motor responds to a signal from the controller to move the substrate holder in accordance with the determined amount of distance change required. The adjustment is made following the coating of wafers at various times over the life of the target.

Abstract: Thickness uniformity of films sputtered from a target onto a series of substrates is maintained as the target surface shape changes due to the consumption of the target. The eroded condition of the target is sensed by directly measuring the position of a point on the target surface, by measuring power consumption of the target, by measuring deposition from the surface of the target or by some other means. A controller responds to the measurement by moving a substrate holder to determine an amount to change the distance between the substrate and the target, usually by moving the substrate closer to the target, by an amount necessary to maintain uniformity of the coatings on the wafers being processed. A servo or stepper motor responds to a signal from the controller to move the substrate holder in accordance with the determined amount of distance change required. The adjustment is made following the coating of wafers at various times over the life of the target.

Abstract: A substrate support platform has a substrate engaging surface which defines a first channel for introducing and distributing a thermal transfer gas to a first region of the engaging surface, and a second channel, nonintersecting with the first channel, for introducing and distributing a thermal transfer gas to a second region of the engaging surface. A gas delivery system is independently connected between a gas source and the first and second channels, for independently providing (via valved connections) a thermal transfer gas to the first and second channels, so that gas delivery may be limited to one of the channels, or gas may be delivered to both of the channels in case a substrate is placed over either or both of the associated regions. A pressure measuring device is independently coupled to each of the channels via measuring ports, permitting measurement and control of gas pressure from the gas source.

Abstract: An apparatus is disclosed for clamping a substrate or wafer with a predetermined force during a sputtering process for maintaining a minimal gap between the wafer and a backplane in order to provide a uniform temperature distribution on the wafer. The apparatus includes a first suspension system which includes a diaphragm having a plurality of spring sections positioned in contact with an outer peripheral area of an upper surface of the wafer. The spring sections are positioned immediately adjacent to each other to provide substantially continuous and uniform loading of the outer periphery in order to eliminate edge gaps. The apparatus further includes a second suspension system which includes a mounting ring having a plurality of springs each of which are secured to a fixed element.

Abstract: A composite backing plate (34) for a backing plate-target assembly (41) having a core of structural material (36) with a front face (42) and/or a rear face (44) of a different material laminated thereto. The composite backing plate (35) has the desired mechanical properties of a solid copper backing plate, for example, strength and stiffness, but is preferably less than half the density of a solid copper backing plate. The core material is preferably aluminum; the front face is preferably copper; and the rear face is preferably either copper or an organic material.

Abstract: A method for forming a magnetically oriented thin film on a substrate is disclosed wherein deposition pulses are alternated with magnetic field pulses. In particular, the method includes sputtering a target to deposit a first incremental layer of target material on the substrate, wherein the target is sputtered for a first sputtering time period and the first incremental layer includes randomly oriented first domains. The method further includes generating a magnetic field for orienting the first in a desired direction, wherein the magnetic field is generated for a first magnetic field time period which begins after the first sputtering time period ends. In addition, the method includes sputtering the target to deposit a second incremental layer of target material upon the first incremental layer; wherein the target is sputtered for a second sputtering time period which begins after the first magnetic field time period ends and the second incremental layer includes randomly oriented second domains.

Abstract: A device for rotating a substrate in a complex motion within a chamber which during a sputtering process. The device includes a first support element positioned within the chamber. The first support element includes a first rotating structure which is affixed between a platform for supporting the substrate and a first magnet positioned adjacent to the inner wall surface. Further, the first rotating structure is adapted to rotate about a first axis. The device further includes a second support element positioned outside of the chamber. The second support element includes a second rotating structure affixed between a planet gear adapted for engagement with a sun gear outside of the chamber and a second magnet positioned adjacent the outer wall surface and spaced apart from the first magnet. This causes the formation of a magnetic bond between the first and second magnets.

Abstract: A sputtering apparatus for forming a thin film on a substrate is disclosed. The sputtering apparatus includes a target for providing target material for forming the thin film, wherein the target includes a first area. The sputtering apparatus further includes a plasma discharge to enable removal of target material from the target. In addition, a main magnet is provided for generating a main magnetic field for controlling the plasma discharge to remove the target material. Further, a compensating magnet is utilized which is positioned adjacent to the first area. The compensating magnet generates a compensating magnetic field which interacts with the main magnetic field to control the plasma discharge in the first area to form a desired erosion pattern in the first area and enable formation of a substantially uniform film thickness on the substrate.

Abstract: A system for sputtering a substrate is disclosed. The system includes a central housing having at least one process module for forming the layer, wherein the process module is in fluid communication with the central housing and includes a first device used in conjunction with forming the layer on the substrate. In addition, the system includes at least one service module in fluid communication with the central housing, wherein the service module includes at least one replacement device suitable for replacing the first device. The central housing includes a robotic element for transporting the first device from the process module to the service module and for transporting the replacement device from the service module to the process module in order to replace the first device. In addition, the service module includes a dedicated pump for evacuating the service module to a high vacuum in order to reduce surface outgassing of the replacement device to a desired level before use.

Abstract: Method and apparatus for cooling a sputtering target is provided. The method comprises the steps of providing a sputtering target and a cooling surface in operable conductive heat transfer contact with the sputtering target, introducing a cooling liquid onto the cooling surface to conductively remove heat from the sputtering target, allowing at least a portion of the cooling liquid to change phase into a vapor, and preventing a continuous insulating vapor layer from forming on the cooling surface to ensure continuing conductive heat transfer from the target to the cooling surface so as to avoid overheating of the target.

Abstract: Apparatus for trapping and collecting debris including an in-line trap contained in a subterranean chamber having an inlet and an outlet for connection to an underground conduit such as a sewer or storm drain conduit. The trap comprises a net being closed on all sides except on an inlet side which faces the inlet to the chamber. The chamber is contained in a vault having a set of upper doors and the bag is attached to a frame structure having suitable supports which may be grasped such that the bag may be lifted upwardly through the doors for replacement. An overflow weir is provided for allow flow past the trap when the bag is full of debris. Sensing systems are further provided for detecting and signalling when the bag is full. A multi-bag system is also disclosed in which at least two bags in parallel are provided such that one bag may accommodate overflow when the other is being serviced.

Abstract: A sputtering target comprises a disc machined from a first piece of target grade material, having a front sputtering face and a rear face opposite. The sputtering face and target material erode during use to define a final sputtered face contour and a residual target thickness t measured from the rear face. A hub is machined from a second piece of material and is secured to the rear face of the disc. The securement device utilizes a depth of target material measured from the rear face which minimizes the thickness t in a region adjacent the hub so as to maximize the amount of the target grade material sputterable before in the region before encountering the securement device. In another form, the disc and hub are forged from a single starting slug of target grade material.

Abstract: An expendable target of sputter coating material is provided having secured thereto a storage medium having recorded thereon, in machine readable indicia, information relating to a characteristic of the target. The information preferably includes target identifying information and may also include information relating to the target composition, the history of the use of the target, and other information usable by the apparatus to automatically set machine parameters or to record process information. Information, particularly of the use of the target, may be updated and written to a medium on the target or target assembly, or to a machine readable medium which may be affixed to the target assembly when the target is removed. The target is preferably one piece with a cooling surface opposite its sputtering surface, and having the indicia fixed to the sputtering material at the periphery or rim of the target.

Abstract: A target of a thickness, which varies across its radius according to the amount of material required to be sputtered, is supported in a nest in a chamber of a sputter coating apparatus. Positioned behind the nest is a rotating magnet carrier having arranged thereon in a closed loop a permanant or electro magnetic strip, but preferably a flexible permanently magnetic material, with portions near the rim of the target and portions near, but not on, the target center about which the magnet rotates. The magnetic loop is transversely polarized with one pole toward the target rim and one toward the target center so that its field will enclose the rim of the target within a magnetic tunnel that traps a plasma over the target. Lumped magnets across the center from the strip support the plasma near the center so as to cause some sputtering at the target center. Other lumped magnets adjacent the strip help sharpen the field so that a desired distribution of sputtering can be achieved.

Abstract: A re-entrant plug structure is disclosed which extends inside a processing chamber containing an ionized plasma in proximity to the plasma to physically displace the ionized plasma and selectively controllably vary concentration of ionized gas particles over the surface of a wafer to be sputter etched which is supported inside the chamber. The variation of concentration of the ionized plasma allows the selectively controllable variation of sputter etch rates on the surface of the wafer. The re-entrant plug structure may be formed as part of the enclosure cover of the processing chamber or may be a separable moveable unit which is inserted into the plasma through an opening in the processing chamber. The re-entrant plug may be of various lengths, diameters and shapes to displace and shape the ionized plasma.

Abstract: Apparatus for containment and/or equalization of effluent flow and runoff includes a plurality of compartments situated in a receiving body of water in a manner which prevents leakage of undiluted, polluted water into the receiving body of water. An inner, central compartment receives effluent flow or runoff and is surrounded or substantially surrounded by other compartments which allow sequential, generally radially outward flow of the effluent material from the central compartment to the receiving body of water. Leakage is further prevented through improved manners of sealing flexible wall compartments from water leakage under the lower edges of the compartment walls.

Abstract: A sputtering target and target assembly includes a target member having a substantially continuously concave top surface and a bottom surface with a central, downwardly directed hub and at least three annular regions of differing radius of curvature. The shape of the target member bottom surface conforms to a backplate to which it is mounted, thereby facilitating accurate mounting of the target member during sputtering. The corresponding shapes of the target member and backplate promote maximum utilization of sputtering material.