Abstract: A communication device (310) is provided that includes a nano-sized RF antenna (100) having low power consumption and wide-range frequency spectrum based on bottom-up nanotechnology. The antenna (100) includes an insulator layer (110) positioned between a free magnetic layer (112) and a fixed magnetic layer (108). A DC voltage source (124) is coupled to the free magnetic layer (112) and the fixed magnetic layer (108) for providing a current (118) therethrough. A detector (126) is coupled between the antenna (100) and the DC voltage source (124) for detecting a change in the current (118) in response to a radiated signal being received by the antenna (100) which causes a change in the spin on electrons in the free magnetic layer (112).

Abstract: A communication device (310) is provided that includes a nano-sized RF antenna (100) having low power consumption and wide-range frequency spectrum based on bottom-up nanotechnology. The antenna (100) includes an insulator layer (110) positioned between a free magnetic layer (112) and a fixed magnetic layer (108). A DC voltage source (124) is coupled to the free magnetic layer (112) and the fixed magnetic layer (108) for providing a current (118) therethrough. A detector (126) is coupled between the antenna (100) and the DC voltage source (124) for detecting a change in the current (118) in response to a radiated signal being received by the antenna (100) which causes a change in the spin on electrons in the free magnetic layer (112).

Abstract: A substrate (12) having two high frequency components (28, 30, 34, 36, 48) positioned on substrates (12) typically used for lower frequency devices. A coplanar strip transmission line (38, 40, 46, 52, 58), providing for transmission of high frequency signals, comprises first, second and third parallel, spaced conductive traces (62, 64, 66) positioned on a surface (11) of the substrate (12), wherein the substrate (12) defines a first slot (68, 72, 76) extending from the first surface (11) into the substrate (12) and between the first and second parallel, spaced conductive traces (64, 62), and a second slot (70, 74, 78) extending from the first surface (11) into the substrate (12) and between the first and third parallel, spaced conductive traces (64, 66). Optionally, an antenna (42, 44, 54, 56) is coupled to the coplanar strip transmission line (46, 58) and comprises first and second antenna traces (41, 43), the substrate (12) defining a third slot (45) therebetween.

Abstract: A packaging structure (10) is provided having a hermetic sealed cavity for microelectronic applications. The packaging structure (10) comprises first and second packaging layers (12, 28) forming a cavity. Two liquid crystal polymer (LCP) layers (16, 22) are formed between and hermetically seal the first and second packaging layers (12, 28). First and second conductive strips (18, 20) are formed between the LCP layers (16, 22) and extend into the cavity. An electronic device (24) is positioned within the cavity and is coupled to the first and second conductive strips (18, 20).

Abstract: An improved transceiver assembly for a vehicle for detecting potentially hazardous objects is disclosed. The transceiver assembly preferably comprises a patch array feed antenna having an array of a plurality of patches for generating a beam and for detecting the beam as reflected from the potential hazards. The antenna is formed in or on a housing which also contains a parabolic dish that moves to sweeps the beam of radiation towards the potential hazards outside of the vehicle. In a preferred embodiment, approximately 77 GHz radiation is generated from and detected by the antenna.

Abstract: In one embodiment, an improved transceiver assembly for a vehicle capable of detecting potentially hazardous objects is disclosed. The transceiver assembly comprises a tapered slot feed antenna for generating a beam and for detecting the beam as reflected from the potential hazards. The antenna is formed in or on a housing which also contains a parabolic dish that oscillates to sweep the beam of radiation towards the potential hazards outside of the vehicle. In a preferred embodiment, approximately 77 GHz radiation is generated from and detected by the antenna. The antenna is preferably formed on a printed circuit board (PCB) (substrate), which can include additional circuitry necessary to operate the antenna, and which is preferably mounted at an acute angle with respect to the housing to direct the beam at the parabolic dish.

Abstract: According to the most preferred embodiments of the present invention, at least one of the two plates of a capacitor is formed in at least two different layers of an integrated circuit. The methods of the present invention uses “air bridges” or some other dielectric medium to isolate certain portions of the two capacitive plates of a capacitor where at least a portion of one of the capacitive plates passes over at least a portion of the other capacitive plate. The line widths, line separation and number of levels used in the topology of the capacitor will determine the overall capacitance value of a given structure.

Abstract: According to the most preferred embodiments of the present invention, at least one of the two plates of a capacitor is formed in at least two different layers of an integrated circuit. The methods of the present invention uses “air bridges” or some other dielectric medium to isolate certain portions of the two capacitive plates of a capacitor where at least a portion of one of the capacitive plates passes over at least a portion of the other capacitive plate. The line widths, line separation and number of levels used in the topology of the capacitor will determine the overall capacitance value of a given structure.

Abstract: Controlling and controlled components are integrated on a monolithic device. High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. In addition, formation of a compliant substrate may include utilizing surfactant-enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. A set of optical components such as optical sources and/or optical detectors is integrated on the overlying monocrystalline materials, and a controller for the optical components is integrated on the substrate or on another monocrystalline semiconductor layer overlying the substrate.