Abstract: Garnet material according to the invention exhibits a substantially rectangular magnetization loop, with .vertline.H.sub.S .vertline.>.vertline.4.pi.M.sub.S .vertline.Oe, where H.sub.S is the switching magnetic field of the loop, and 4.pi.M.sub.S is the saturation magnetization. The material exhibits "latching" behavior, and can advantageously be used in magneto-optic isolators and other magneto-optic devices. For instance, the material enables manufacture of isolators that do not contain a permanent magnet. An exemplary garnet according to the invention has nominal composition Bi.sub.0.75 Eu.sub.1.5 Ho.sub.0.75 Fe.sub.4.1 Ga.sub.0.9 O.sub.12.

Abstract: Apparatus according to the invention comprises a magneto-optic isolator. The isolator comprises a magneto-optic member that comprises a single crystal substrate and a single crystal garnet layer on the substrate. The garnet layer comprises a first and a second stratum. The composition of the former is chosen such that the lattice constant of the first stratum material is substantially equal to that of the substrate at a first temperature (e.g., room temperature), and is substantially larger than that of the substrate at a second temperature (e.g., the garnet growth temperature) that is higher than the first temperature. The composition of the second stratum is chosen such that the lattice constant of the second stratum is less than that of the substrate at the first temperature, and is less than that of the first stratum at the second temperature. Wafers according to the invention typically are less subject to fracture than analogous prior art wafers.

Abstract: Apparatus according to the invention comprises magneto-optic isolator means that utilize a novel temperature compensation scheme. The scheme involves the use of a composite magneto-optic member that comprises a first single crystal garnet layer that does not have a compensation temperature within the operating temperature range of the isolator, and further comprises a single crystal garnet layer (the "compensation point layer") that has a compensation temperature within the operating temperature range of the isolator. Exemplarily, the compensation point layer has composition (Bi.sub.0.8; Tb.sub.1.1 Gd.sub.1.1)(Fe.sub.4.6 Ga.sub.0.4)O.sub.12, and is grown on an CMZ:GGG substrate, and the first garnet layer has composition (Bi.sub.1.2 Tb.sub.1.8)(Fe.sub.4.6 Ga.sub.0.4)O.sub.12 and is grown on the compensation point layer. The novel temperature compensation scheme can result in isolators having improved extinction ratio with relatively small additional path length in the magneto-optic material.

Abstract: Epitaxial layers are grown from a body of molten material which includes flux and layer constituent components; included in the flux are lead oxide and a small amount of boron trioxide. As compared with prior-art processing in the absence of boron trioxide, enhanced yield is realized as believed to be due to reduced adhesion of solidifying material entrained upon withdrawal of a substrate after growth. The method is particularly useful in the manufacture of magnetic domain devices designed to operate at extreme temperatures, as well as in the manufacture of magneto-optic devices such as, e.g., switches, modulators, and isolators.

Abstract: A specific set of processing steps in the batch production of garnet epilayers yields excellent quality and reproducibility. The process requires (1) agitation of the melt before growth, (2) heat stabilization of the substrates upon extraction from the melt, and (3) extraction from the melt so that the major surfaces of the substrates leave the melt at an angle to the melt surface. Use of these processing steps avoids defects common to batch processing such as fracture of a fraction of the substrates, sever non-uniform properties through the epilayers, and mesa formation on the epilayer.

Abstract: An optical isolator is disclosed which comprises a Faraday rotator disposed between a pair of polarization selective elements (e.g., linear polarizers, birefringent wedges, birefringent plates, etc.). Improvement in isolation stability as a function of variations in temperature and/or signal wavelength are achieved in accordance with the teachings of the present invention by utilizing a Faraday device with a rotation .theta. less than the conventional 45.degree.. A linear reduction in .theta., while resulting in a some signal loss, provides a linear increase in both temperature and wavelength stability.