Patents by Inventor Steven J. Wojtczuk

Steven J. Wojtczuk has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200221953
    Abstract: Embodiments of the present disclosure include a photodiode that can detect optical radiation at a broad range of wavelengths. The photodiode can be used as a detector of a non-invasive sensor, which can be used for measuring physiological parameters of a monitored patient. The photodiode can be part of an integrated semiconductor structure that generates a detector signal responsive to optical radiation at both visible and infrared wavelengths incident on the photodiode. The photodiode can include a layer that forms part of an external surface of the photodiode, which is disposed to receive the optical radiation incident on the photodiode and pass the optical radiation to one or more other layers of the photodiode.
    Type: Application
    Filed: January 15, 2020
    Publication date: July 16, 2020
    Inventors: Steven J. Wojtczuk, Xuebing Zhang, William J. MacNeish, III
  • Patent number: 10568514
    Abstract: Embodiments of the present disclosure include a photodiode that can detect optical radiation at a broad range of wavelengths. The photodiode can be used as a detector of a non-invasive sensor, which can be used for measuring physiological parameters of a monitored patient. The photodiode can be part of an integrated semiconductor structure that generates a detector signal responsive to optical radiation at both visible and infrared wavelengths incident on the photodiode. The photodiode can include a layer that forms part of an external surface of the photodiode, which is disposed to receive the optical radiation incident on the photodiode and pass the optical radiation to one or more other layers of the photodiode.
    Type: Grant
    Filed: July 8, 2019
    Date of Patent: February 25, 2020
    Assignee: MASIMO SEMICONDUCTOR, INC.
    Inventors: Steven J. Wojtczuk, Xuebing Zhang, William J. MacNeish, III
  • Publication number: 20200000340
    Abstract: Embodiments of the present disclosure include a photodiode that can detect optical radiation at a broad range of wavelengths. The photodiode can be used as a detector of a non-invasive sensor, which can be used for measuring physiological parameters of a monitored patient. The photodiode can be part of an integrated semiconductor structure that generates a detector signal responsive to optical radiation at both visible and infrared wavelengths incident on the photodiode. The photodiode can include a layer that forms part of an external surface of the photodiode, which is disposed to receive the optical radiation incident on the photodiode and pass the optical radiation to one or more other layers of the photodiode.
    Type: Application
    Filed: July 8, 2019
    Publication date: January 2, 2020
    Inventors: Steven J. Wojtczuk, Xuebing Zhang, William J. MacNeish, III
  • Patent number: 10383520
    Abstract: Embodiments of the present disclosure include a photodiode that can detect optical radiation at a broad range of wavelengths. The photodiode can be used as a detector of a non-invasive sensor, which can be used for measuring physiological parameters of a monitored patient. The photodiode can be part of an integrated semiconductor structure that generates a detector signal responsive to optical radiation at both visible and infrared wavelengths incident on the photodiode. The photodiode can include a layer that forms part of an external surface of the photodiode, which is disposed to receive the optical radiation incident on the photodiode and pass the optical radiation to one or more other layers of the photodiode.
    Type: Grant
    Filed: September 18, 2015
    Date of Patent: August 20, 2019
    Assignee: MASIMO SEMICONDUCTOR, INC.
    Inventors: Steven J. Wojtczuk, Xuebing Zhang, William J. MacNeish, III
  • Patent number: 9847749
    Abstract: Solar panels located on residential roofs can be unsightly in some cases. A swimming pool solar power generator can locate solar panels in or around the sides and/or bottoms of a swimming pool in a manner so as to create electricity from the sun without creating an eyesore. In an embodiment, a pool solar power generator includes a solar cell module disposed in a portion of a swimming pool. The solar cell module can include solar cells and be submerged under water held by the swimming pool. The solar cell module can convert sunlight incident on the solar cells to electricity and transmit the electricity for use at a location external to the swimming pool.
    Type: Grant
    Filed: September 10, 2015
    Date of Patent: December 19, 2017
    Assignee: MASIMO SEMICONDUCTOR, INC.
    Inventors: Massi Joe E. Kiani, Steven J. Wojtczuk, Brad M. Siskavich
  • Patent number: 9368671
    Abstract: A method of fabricating on a semiconductor substrate bifacial tandem solar cells with semiconductor subcells having a lower bandgap than the substrate bandgap on one side of the substrate and with subcells having a higher bandgap than the substrate on the other including, first, growing a lower bandgap subcell on one substrate side that uses only the same periodic table group V material in the dislocation-reducing grading layers and bottom subcells as is present in the substrate and after the initial growth is complete and then flipping the substrate and growing the higher bandgap subcells on the opposite substrate side which can be of different group V material.
    Type: Grant
    Filed: October 6, 2014
    Date of Patent: June 14, 2016
    Assignee: MASIMO SEMICONDUCTOR, INC.
    Inventors: Steven J. Wojtczuk, Philip T. Chiu, Xuebing Zhang, Edward Gagnon, Michael Timmons
  • Publication number: 20160081552
    Abstract: Embodiments of the present disclosure include a photodiode that can detect optical radiation at a broad range of wavelengths. The photodiode can be used as a detector of a non-invasive sensor, which can be used for measuring physiological parameters of a monitored patient. The photodiode can be part of an integrated semiconductor structure that generates a detector signal responsive to optical radiation at both visible and infrared wavelengths incident on the photodiode. The photodiode can include a layer that forms part of an external surface of the photodiode, which is disposed to receive the optical radiation incident on the photodiode and pass the optical radiation to one or more other layers of the photodiode.
    Type: Application
    Filed: September 18, 2015
    Publication date: March 24, 2016
    Inventors: Steven J. Wojtczuk, Xuebing Zhang, William J. MacNeish, III
  • Publication number: 20160072429
    Abstract: Solar panels located on residential roofs can be unsightly in some cases. A swimming pool solar power generator can locate solar panels in or around the sides and/or bottoms of a swimming pool in a manner so as to create electricity from the sun without creating an eyesore. In an embodiment, a pool solar power generator includes a solar cell module disposed in a portion of a swimming pool. The solar cell module can include solar cells and be submerged under water held by the swimming pool. The solar cell module can convert sunlight incident on the solar cells to electricity and transmit the electricity for use at a location external to the swimming pool.
    Type: Application
    Filed: September 10, 2015
    Publication date: March 10, 2016
    Inventors: Massi Joe E. Kiani, Steven J. Wojtczuk, Brad M. Siskavich
  • Publication number: 20150099324
    Abstract: A method of fabricating on a semiconductor substrate bifacial tandem solar cells with semiconductor subcells having a lower bandgap than the substrate bandgap on one side of the substrate and with subcells having a higher bandgap than the substrate on the other including, first, growing a lower bandgap subcell on one substrate side that uses only the same periodic table group V material in the dislocation-reducing grading layers and bottom subcells as is present in the substrate and after the initial growth is complete and then flipping the substrate and growing the higher bandgap subcells on the opposite substrate side which can be of different group V material.
    Type: Application
    Filed: October 6, 2014
    Publication date: April 9, 2015
    Inventors: Steven J. Wojtczuk, Philip T. Chiu, Xuebing Zhang, Edward Gagnon, Michael Timmons
  • Patent number: 8852994
    Abstract: A method of fabricating on a semiconductor substrate bifacial tandem solar cells with semiconductor subcells having a lower bandgap than the substrate bandgap on one side of the substrate and with subcells having a higher bandgap than the substrate on the other including, first, growing a lower bandgap subcell on one substrate side that uses only the same periodic table group V material in the dislocation-reducing grading layers and bottom subcells as is present in the substrate and after the initial growth is complete and then flipping the substrate and growing the higher bandgap subcells on the opposite substrate side which can be of different group V material.
    Type: Grant
    Filed: May 24, 2010
    Date of Patent: October 7, 2014
    Assignee: Masimo Semiconductor, Inc.
    Inventors: Steven J. Wojtczuk, Philip T. Chiu, Xuebing Zhang, Edward Gagnon, Michael Timmons
  • Publication number: 20140166076
    Abstract: Solar panels located on residential roofs can be unsightly in some cases. A swimming pool solar power generator can locate solar panels in or around the sides and/or bottoms of a swimming pool in a manner so as to create electricity from the sun without creating an eyesore. In an embodiment, a pool solar power generator includes a solar cell module disposed in a portion of a swimming pool. The solar cell module can include solar cells and be submerged under water held by the swimming pool. The solar cell module can convert sunlight incident on the solar cells to electricity and transmit the electricity for use at a location external to the swimming pool.
    Type: Application
    Filed: December 16, 2013
    Publication date: June 19, 2014
    Applicant: Masimo Semiconductor, Inc
    Inventors: Massi Joe E. Kiani, Steven J. Wojtczuk, Brad M. Siskavich
  • Patent number: 8242009
    Abstract: The present invention provides nanophotovoltaic devices having sizes in a range of about 50 nm to about 5 microns, and method of their fabrication. In some embodiments, the nanophotovoltaic device includes a semiconductor core, e.g., formed of silicon, sandwiched between two metallic layers, one of which forms a Schottky barrier junction with the semiconductor core and the other forms an ohmic contact therewith. In other embodiment, the nanophotovoltaic device includes a semiconductor core comprising a p-n junction that is sandwiched between two metallic layers forming ohmic contacts with the core.
    Type: Grant
    Filed: June 3, 2011
    Date of Patent: August 14, 2012
    Assignee: Spire Corporation
    Inventors: Steven J. Wojtczuk, James G. Moe, Roger G. Little
  • Publication number: 20110287578
    Abstract: A method of fabricating on a semiconductor substrate bifacial tandem solar cells with semiconductor subcells having a lower bandgap than the substrate bandgap on one side of the substrate and with subcells having a higher bandgap than the substrate on the other including, first, growing a lower bandgap subcell on one substrate side that uses only the same periodic table group V material in the dislocation-reducing grading layers and bottom subcells as is present in the substrate and after the initial growth is complete and then flipping the substrate and growing the higher bandgap subcells on the opposite substrate side which can be of different group V material.
    Type: Application
    Filed: May 24, 2010
    Publication date: November 24, 2011
    Inventors: Steven J. Wojtczuk, Philip T. Chiu, Xuebing Zhang, Edward Gagnon, Michael Timmons
  • Publication number: 20110237015
    Abstract: The present invention provides nanophotovoltaic devices having sizes in a range of about 50 nm to about 5 microns, and method of their fabrication. In some embodiments, the nanophotovoltaic device includes a semiconductor core, e.g., formed of silicon, sandwiched between two metallic layers, one of which forms a Schottky barrier junction with the semiconductor core and the other forms an ohmic contact therewith. In other embodiment, the nanophotovoltaic device includes a semiconductor core comprising a p-n junction that is sandwiched between two metallic layers forming ohmic contacts with the core.
    Type: Application
    Filed: June 3, 2011
    Publication date: September 29, 2011
    Applicant: SPIRE CORPORATION
    Inventors: Steven J. Wojtczuk, James G. Moe, Roger G. Little
  • Patent number: 7955965
    Abstract: The present invention provides nanophotovoltaic devices having sizes in a range of about 50 nm to about 5 microns, and method of their fabrication. In some embodiments, the nanophotovoltaic device includes a semiconductor core, e.g., formed of silicon, sandwiched between two metallic layers, one of which forms a Schottky barrier junction with the semiconductor core and the other forms an ohmic contact therewith. In other embodiment, the nanophotovoltaic device includes a semiconductor core comprising a p-n junction that is sandwiched between two metallic layers forming ohmic contacts with the core.
    Type: Grant
    Filed: August 6, 2010
    Date of Patent: June 7, 2011
    Assignee: Spire Corporation
    Inventors: Steven J. Wojtczuk, James G. Moe, Roger G. Little
  • Publication number: 20100297803
    Abstract: The present invention provides nanophotovoltaic devices having sizes in a range of about 50 nm to about 5microns, and method of their fabrication. In some embodiments, the nanophotovoltaic device includes a semiconductor core, e.g., formed of silicon, sandwiched between two metallic layers, one of which forms a Schottky barrier junction with the semiconductor core and the other forms an ohmic contact therewith. In other embodiment, the nanophotovoltaic device includes a semiconductor core comprising a p-n junction that is sandwiched between two metallic layers forming ohmic contacts with the core.
    Type: Application
    Filed: August 6, 2010
    Publication date: November 25, 2010
    Applicant: SPIRE CORPORATION
    Inventors: Steven J. Wojtczuk, James G. Moe, Roger G. Little
  • Patent number: 7772612
    Abstract: The present invention provides nanophotovoltaic devices having sizes in a range of about 50 nm to about 5 microns, and method of their fabrication. In some embodiments, the nanophotovoltaic device includes a semiconductor core, e.g., formed of silicon, sandwiched between two metallic layers, one of which forms a Schottky barrier junction with the semiconductor core and the other forms an ohmic contact therewith. In other embodiment, the nanophotovoltaic device includes a semiconductor core comprising a p-n junction that is sandwiched between two metallic layers forming ohmic contacts with the core.
    Type: Grant
    Filed: February 19, 2009
    Date of Patent: August 10, 2010
    Assignee: Spire Corporation
    Inventors: Steven J. Wojtczuk, James G. Moe, Roger G. Little
  • Publication number: 20090165852
    Abstract: The present invention provides nanophotovoltaic devices having sizes in a range of about 50 nm to about 5 microns, and method of their fabrication. In some embodiments, the nanophotovoltaic device includes a semiconductor core, e.g., formed of silicon, sandwiched between two metallic layers, one of which forms a Schottky barrier junction with the semiconductor core and the other forms an ohmic contact therewith. In other embodiment, the nanophotovoltaic device includes a semiconductor core comprising a p-n junction that is sandwiched between two metallic layers forming ohmic contacts with the core.
    Type: Application
    Filed: February 19, 2009
    Publication date: July 2, 2009
    Applicant: SPIRE CORPORATION
    Inventors: Steven J. Wojtczuk, James G. Moe, Roger G. Little
  • Patent number: 7514725
    Abstract: The present invention provides nanophotovoltaic devices having sizes in a range of about 50 nm to about 5 microns, and method of their fabrication. In some embodiments, the nanophotovoltaic device includes a semiconductor core, e.g., formed of silicon, sandwiched between two metallic layers, one of which forms a Schottky barrier junction with the semiconductor core and the other forms an ohmic contact therewith. In other embodiment, the nanophotovoltaic device includes a semiconductor core comprising a p-n junction that is sandwiched between two metallic layers forming ohmic contacts with the core.
    Type: Grant
    Filed: November 30, 2004
    Date of Patent: April 7, 2009
    Assignee: Spire Corporation
    Inventors: Steven J. Wojtczuk, James G. Moe, Roger G. Little
  • Patent number: 6010937
    Abstract: A heteroepitaxial semiconductor device having reduced density of threading dislocations and a process for forming such a device. According to one embodiment, the device includes a substrate which is heat treated to a temperature in excess of 1000.degree. C., a film of arsenic formed on the substrate at a temperature between 800.degree. C. and 840.degree. C., a GaAs nucleation layer of less than 200 angstroms and formed at a temperature between about 350.degree. C. and 450.degree. C., and a plurality of stacked groups of layers of InP, wherein adjacent InP layers are formed at different temperatures.
    Type: Grant
    Filed: September 5, 1995
    Date of Patent: January 4, 2000
    Assignee: Spire Corporation
    Inventors: Nasser H. Karam, Steven J. Wojtczuk