Patents by Inventor Steven J. Wojtczuk
Steven J. Wojtczuk has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11850024Abstract: Embodiments of the present disclosure include a photodiode that can detect optical radiation at a broad range of wavelengths. The photodiode can be used as a detector of a non-invasive sensor, which can be used for measuring physiological parameters of a monitored patient. The photodiode can be part of an integrated semiconductor structure that generates a detector signal responsive to optical radiation at both visible and infrared wavelengths incident on the photodiode. The photodiode can include a layer that forms part of an external surface of the photodiode, which is disposed to receive the optical radiation incident on the photodiode and pass the optical radiation to one or more other layers of the photodiode.Type: GrantFiled: August 4, 2021Date of Patent: December 26, 2023Assignee: MASIMO SEMICONDUCTOR, INC.Inventors: Steven J. Wojtczuk, Xuebing Zhang, William J. MacNeish
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Publication number: 20220022751Abstract: Embodiments of the present disclosure include a photodiode that can detect optical radiation at a broad range of wavelengths. The photodiode can be used as a detector of a non-invasive sensor, which can be used for measuring physiological parameters of a monitored patient. The photodiode can be part of an integrated semiconductor structure that generates a detector signal responsive to optical radiation at both visible and infrared wavelengths incident on the photodiode. The photodiode can include a layer that forms part of an external surface of the photodiode, which is disposed to receive the optical radiation incident on the photodiode and pass the optical radiation to one or more other layers of the photodiode.Type: ApplicationFiled: August 4, 2021Publication date: January 27, 2022Inventors: Steven J. Wojtczuk, Xuebing Zhang, William J. MacNeish, III
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Patent number: 11103134Abstract: Embodiments of the present disclosure include a photodiode that can detect optical radiation at a broad range of wavelengths. The photodiode can be used as a detector of a non-invasive sensor, which can be used for measuring physiological parameters of a monitored patient. The photodiode can be part of an integrated semiconductor structure that generates a detector signal responsive to optical radiation at both visible and infrared wavelengths incident on the photodiode. The photodiode can include a layer that forms part of an external surface of the photodiode, which is disposed to receive the optical radiation incident on the photodiode and pass the optical radiation to one or more other layers of the photodiode.Type: GrantFiled: January 15, 2020Date of Patent: August 31, 2021Assignee: MASIMO SEMICONDUCTOR, INC.Inventors: Steven J. Wojtczuk, Xuebing Zhang, William J. MacNeish, III
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Publication number: 20200221953Abstract: Embodiments of the present disclosure include a photodiode that can detect optical radiation at a broad range of wavelengths. The photodiode can be used as a detector of a non-invasive sensor, which can be used for measuring physiological parameters of a monitored patient. The photodiode can be part of an integrated semiconductor structure that generates a detector signal responsive to optical radiation at both visible and infrared wavelengths incident on the photodiode. The photodiode can include a layer that forms part of an external surface of the photodiode, which is disposed to receive the optical radiation incident on the photodiode and pass the optical radiation to one or more other layers of the photodiode.Type: ApplicationFiled: January 15, 2020Publication date: July 16, 2020Inventors: Steven J. Wojtczuk, Xuebing Zhang, William J. MacNeish, III
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Patent number: 10568514Abstract: Embodiments of the present disclosure include a photodiode that can detect optical radiation at a broad range of wavelengths. The photodiode can be used as a detector of a non-invasive sensor, which can be used for measuring physiological parameters of a monitored patient. The photodiode can be part of an integrated semiconductor structure that generates a detector signal responsive to optical radiation at both visible and infrared wavelengths incident on the photodiode. The photodiode can include a layer that forms part of an external surface of the photodiode, which is disposed to receive the optical radiation incident on the photodiode and pass the optical radiation to one or more other layers of the photodiode.Type: GrantFiled: July 8, 2019Date of Patent: February 25, 2020Assignee: MASIMO SEMICONDUCTOR, INC.Inventors: Steven J. Wojtczuk, Xuebing Zhang, William J. MacNeish, III
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Publication number: 20200000340Abstract: Embodiments of the present disclosure include a photodiode that can detect optical radiation at a broad range of wavelengths. The photodiode can be used as a detector of a non-invasive sensor, which can be used for measuring physiological parameters of a monitored patient. The photodiode can be part of an integrated semiconductor structure that generates a detector signal responsive to optical radiation at both visible and infrared wavelengths incident on the photodiode. The photodiode can include a layer that forms part of an external surface of the photodiode, which is disposed to receive the optical radiation incident on the photodiode and pass the optical radiation to one or more other layers of the photodiode.Type: ApplicationFiled: July 8, 2019Publication date: January 2, 2020Inventors: Steven J. Wojtczuk, Xuebing Zhang, William J. MacNeish, III
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Patent number: 10383520Abstract: Embodiments of the present disclosure include a photodiode that can detect optical radiation at a broad range of wavelengths. The photodiode can be used as a detector of a non-invasive sensor, which can be used for measuring physiological parameters of a monitored patient. The photodiode can be part of an integrated semiconductor structure that generates a detector signal responsive to optical radiation at both visible and infrared wavelengths incident on the photodiode. The photodiode can include a layer that forms part of an external surface of the photodiode, which is disposed to receive the optical radiation incident on the photodiode and pass the optical radiation to one or more other layers of the photodiode.Type: GrantFiled: September 18, 2015Date of Patent: August 20, 2019Assignee: MASIMO SEMICONDUCTOR, INC.Inventors: Steven J. Wojtczuk, Xuebing Zhang, William J. MacNeish, III
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Patent number: 9847749Abstract: Solar panels located on residential roofs can be unsightly in some cases. A swimming pool solar power generator can locate solar panels in or around the sides and/or bottoms of a swimming pool in a manner so as to create electricity from the sun without creating an eyesore. In an embodiment, a pool solar power generator includes a solar cell module disposed in a portion of a swimming pool. The solar cell module can include solar cells and be submerged under water held by the swimming pool. The solar cell module can convert sunlight incident on the solar cells to electricity and transmit the electricity for use at a location external to the swimming pool.Type: GrantFiled: September 10, 2015Date of Patent: December 19, 2017Assignee: MASIMO SEMICONDUCTOR, INC.Inventors: Massi Joe E. Kiani, Steven J. Wojtczuk, Brad M. Siskavich
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Patent number: 9368671Abstract: A method of fabricating on a semiconductor substrate bifacial tandem solar cells with semiconductor subcells having a lower bandgap than the substrate bandgap on one side of the substrate and with subcells having a higher bandgap than the substrate on the other including, first, growing a lower bandgap subcell on one substrate side that uses only the same periodic table group V material in the dislocation-reducing grading layers and bottom subcells as is present in the substrate and after the initial growth is complete and then flipping the substrate and growing the higher bandgap subcells on the opposite substrate side which can be of different group V material.Type: GrantFiled: October 6, 2014Date of Patent: June 14, 2016Assignee: MASIMO SEMICONDUCTOR, INC.Inventors: Steven J. Wojtczuk, Philip T. Chiu, Xuebing Zhang, Edward Gagnon, Michael Timmons
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Publication number: 20160081552Abstract: Embodiments of the present disclosure include a photodiode that can detect optical radiation at a broad range of wavelengths. The photodiode can be used as a detector of a non-invasive sensor, which can be used for measuring physiological parameters of a monitored patient. The photodiode can be part of an integrated semiconductor structure that generates a detector signal responsive to optical radiation at both visible and infrared wavelengths incident on the photodiode. The photodiode can include a layer that forms part of an external surface of the photodiode, which is disposed to receive the optical radiation incident on the photodiode and pass the optical radiation to one or more other layers of the photodiode.Type: ApplicationFiled: September 18, 2015Publication date: March 24, 2016Inventors: Steven J. Wojtczuk, Xuebing Zhang, William J. MacNeish, III
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Publication number: 20160072429Abstract: Solar panels located on residential roofs can be unsightly in some cases. A swimming pool solar power generator can locate solar panels in or around the sides and/or bottoms of a swimming pool in a manner so as to create electricity from the sun without creating an eyesore. In an embodiment, a pool solar power generator includes a solar cell module disposed in a portion of a swimming pool. The solar cell module can include solar cells and be submerged under water held by the swimming pool. The solar cell module can convert sunlight incident on the solar cells to electricity and transmit the electricity for use at a location external to the swimming pool.Type: ApplicationFiled: September 10, 2015Publication date: March 10, 2016Inventors: Massi Joe E. Kiani, Steven J. Wojtczuk, Brad M. Siskavich
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Publication number: 20150099324Abstract: A method of fabricating on a semiconductor substrate bifacial tandem solar cells with semiconductor subcells having a lower bandgap than the substrate bandgap on one side of the substrate and with subcells having a higher bandgap than the substrate on the other including, first, growing a lower bandgap subcell on one substrate side that uses only the same periodic table group V material in the dislocation-reducing grading layers and bottom subcells as is present in the substrate and after the initial growth is complete and then flipping the substrate and growing the higher bandgap subcells on the opposite substrate side which can be of different group V material.Type: ApplicationFiled: October 6, 2014Publication date: April 9, 2015Inventors: Steven J. Wojtczuk, Philip T. Chiu, Xuebing Zhang, Edward Gagnon, Michael Timmons
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Patent number: 8852994Abstract: A method of fabricating on a semiconductor substrate bifacial tandem solar cells with semiconductor subcells having a lower bandgap than the substrate bandgap on one side of the substrate and with subcells having a higher bandgap than the substrate on the other including, first, growing a lower bandgap subcell on one substrate side that uses only the same periodic table group V material in the dislocation-reducing grading layers and bottom subcells as is present in the substrate and after the initial growth is complete and then flipping the substrate and growing the higher bandgap subcells on the opposite substrate side which can be of different group V material.Type: GrantFiled: May 24, 2010Date of Patent: October 7, 2014Assignee: Masimo Semiconductor, Inc.Inventors: Steven J. Wojtczuk, Philip T. Chiu, Xuebing Zhang, Edward Gagnon, Michael Timmons
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Publication number: 20140166076Abstract: Solar panels located on residential roofs can be unsightly in some cases. A swimming pool solar power generator can locate solar panels in or around the sides and/or bottoms of a swimming pool in a manner so as to create electricity from the sun without creating an eyesore. In an embodiment, a pool solar power generator includes a solar cell module disposed in a portion of a swimming pool. The solar cell module can include solar cells and be submerged under water held by the swimming pool. The solar cell module can convert sunlight incident on the solar cells to electricity and transmit the electricity for use at a location external to the swimming pool.Type: ApplicationFiled: December 16, 2013Publication date: June 19, 2014Applicant: Masimo Semiconductor, IncInventors: Massi Joe E. Kiani, Steven J. Wojtczuk, Brad M. Siskavich
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Patent number: 8242009Abstract: The present invention provides nanophotovoltaic devices having sizes in a range of about 50 nm to about 5 microns, and method of their fabrication. In some embodiments, the nanophotovoltaic device includes a semiconductor core, e.g., formed of silicon, sandwiched between two metallic layers, one of which forms a Schottky barrier junction with the semiconductor core and the other forms an ohmic contact therewith. In other embodiment, the nanophotovoltaic device includes a semiconductor core comprising a p-n junction that is sandwiched between two metallic layers forming ohmic contacts with the core.Type: GrantFiled: June 3, 2011Date of Patent: August 14, 2012Assignee: Spire CorporationInventors: Steven J. Wojtczuk, James G. Moe, Roger G. Little
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Publication number: 20110287578Abstract: A method of fabricating on a semiconductor substrate bifacial tandem solar cells with semiconductor subcells having a lower bandgap than the substrate bandgap on one side of the substrate and with subcells having a higher bandgap than the substrate on the other including, first, growing a lower bandgap subcell on one substrate side that uses only the same periodic table group V material in the dislocation-reducing grading layers and bottom subcells as is present in the substrate and after the initial growth is complete and then flipping the substrate and growing the higher bandgap subcells on the opposite substrate side which can be of different group V material.Type: ApplicationFiled: May 24, 2010Publication date: November 24, 2011Inventors: Steven J. Wojtczuk, Philip T. Chiu, Xuebing Zhang, Edward Gagnon, Michael Timmons
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Publication number: 20110237015Abstract: The present invention provides nanophotovoltaic devices having sizes in a range of about 50 nm to about 5 microns, and method of their fabrication. In some embodiments, the nanophotovoltaic device includes a semiconductor core, e.g., formed of silicon, sandwiched between two metallic layers, one of which forms a Schottky barrier junction with the semiconductor core and the other forms an ohmic contact therewith. In other embodiment, the nanophotovoltaic device includes a semiconductor core comprising a p-n junction that is sandwiched between two metallic layers forming ohmic contacts with the core.Type: ApplicationFiled: June 3, 2011Publication date: September 29, 2011Applicant: SPIRE CORPORATIONInventors: Steven J. Wojtczuk, James G. Moe, Roger G. Little
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Patent number: 7955965Abstract: The present invention provides nanophotovoltaic devices having sizes in a range of about 50 nm to about 5 microns, and method of their fabrication. In some embodiments, the nanophotovoltaic device includes a semiconductor core, e.g., formed of silicon, sandwiched between two metallic layers, one of which forms a Schottky barrier junction with the semiconductor core and the other forms an ohmic contact therewith. In other embodiment, the nanophotovoltaic device includes a semiconductor core comprising a p-n junction that is sandwiched between two metallic layers forming ohmic contacts with the core.Type: GrantFiled: August 6, 2010Date of Patent: June 7, 2011Assignee: Spire CorporationInventors: Steven J. Wojtczuk, James G. Moe, Roger G. Little
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Publication number: 20100297803Abstract: The present invention provides nanophotovoltaic devices having sizes in a range of about 50 nm to about 5microns, and method of their fabrication. In some embodiments, the nanophotovoltaic device includes a semiconductor core, e.g., formed of silicon, sandwiched between two metallic layers, one of which forms a Schottky barrier junction with the semiconductor core and the other forms an ohmic contact therewith. In other embodiment, the nanophotovoltaic device includes a semiconductor core comprising a p-n junction that is sandwiched between two metallic layers forming ohmic contacts with the core.Type: ApplicationFiled: August 6, 2010Publication date: November 25, 2010Applicant: SPIRE CORPORATIONInventors: Steven J. Wojtczuk, James G. Moe, Roger G. Little
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Patent number: 7772612Abstract: The present invention provides nanophotovoltaic devices having sizes in a range of about 50 nm to about 5 microns, and method of their fabrication. In some embodiments, the nanophotovoltaic device includes a semiconductor core, e.g., formed of silicon, sandwiched between two metallic layers, one of which forms a Schottky barrier junction with the semiconductor core and the other forms an ohmic contact therewith. In other embodiment, the nanophotovoltaic device includes a semiconductor core comprising a p-n junction that is sandwiched between two metallic layers forming ohmic contacts with the core.Type: GrantFiled: February 19, 2009Date of Patent: August 10, 2010Assignee: Spire CorporationInventors: Steven J. Wojtczuk, James G. Moe, Roger G. Little