Abstract: A series of processes have been discovered whereby uniform oxygen doping of lead chalcogenides have been achieved by using vapor deposition combined with in situ or ex situ ion implantation allowing the high yield manufacture of high S/N infrared detectors.

Abstract: A high resolution room temperature infrared camera requires no cryogenic cooling and high vacuum packaging, normally though necessary for infrared target detection, by using a “blind” polycrystalline lead salt resistor in combination with a matched active polycrystalline lead salt photoresistor both maintained at room temperature to provide a differential output indicative of an IR generating target. As a result of the matched components, the differential output nulls out the dark current which is the result of the ambient at the camera. The high degree of linearity associated with polycrystalline photoresistors permits fabrication of a differential detector where dark current in the active element is nulled out by equal and opposite current flow in a non-optically active reference resistor.